1. USA patent: Electronic circuit for ion sensor with body effect reduction, US 7,368,917, Inventors: Chung, Wen-Yaw; Yang, Chung-Huang; Pijanowska, Dorota Genowefa; Grabiec, Piotr; Jaroszewicz, Bohdan; and Torbicz, Wladyslaw, , 2008.2008－2025.5 (2008.5.6).
2. USA Patent: Electronic circuit for ion sensor, US 6,906,524. Inventors: Chung, Wen-Yaw; Krzyskow; Alfred; Lin; Yeong-Tsair; Pijanowska; Dorota Genowefa; Yang; Chung-Huang; Torbicz; Wladyslaw, June 14, 2005.
3. USA Patent: Method for fabricating a monolithic chip including pH, temperature and photo-intensity multi-sensors and a readout circuit, US 6,897,081, Inventors: Hsiung; Stephen S. K.; Chou; Jung-Chuan; Sun; Tai-Ping; Chung, Wen-Yaw; Chin; Yuan-Lung; Pan; Chung-We, May 24, 2005.
4. USA Patent: Method of Fabricating a Titanium Nitride Sensing Membrance on an EGFET, US 6,974,716, Inventors: Shen-Kan Hsiung, Jung-Chuan Chou, Wen-Yaw Chung, Tai-Ping Sun, Chin; Yuan-Lung, Lee; C. C., Dec. 13, 2005.
5. USA Patent: Fabrication of Multi-Structure Ion Sensitive Field Effect Transistor with A pH Sensing Layer of A Tin Oxide Thin Film, US 6,218,208. Investors: Shen-Kan Hsiung, Jung-Chuan Chou, Wen-Yaw Chung, Tai-Ping Sun, Hung-Kwei Liao. 04/17/2001.
6. USA Patent: Ion Sensitive Transistor, US 6,236,075. Investors: Shen-Kan Hsiung, Jung-Chuan Chou, Tai-Ping Sun, Wen-Yaw Chung, Hung-Kwei Liao. 05/22/2001.