Publications
Peer-Reviewed Journals
2021
[1] Wei Wang, Erika Covi, Alessandro Milozzi, Matteo Farronato, Saverio Ricci, Caterina Sbandati, Giacomo Pedretti, and Daniele Ielmini, “Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories,” Adv. Intell. Syst., 3(4) 2000224, Nov. 2021. DOI: 10.1002/aisy.202000224.
[2] Covi, Erika, Elisa Donati, Xiangpeng Liang, David Kappel, Hadi Heidari, Melika Payvand, and Wei Wang, “Adaptive Extreme Edge Computing for Wearable Devices.” Frontiers in Neuroscience 15 (5): 1–27, 2021. DOI: 10.3389/fnins.2021.611300.
2020
[3] Wei Wang, Wenhao Song, Peng Yao, Yang Li, Joseph Van Nostrand, Qinru Qiu, Daniele Ielmini, and J. Joshua Yang, “Integration and Co-design of Memristive Devices and Algorithms for Artificial Intelligence,” Cell iScience, vol. 23, no. 12, p. 101809, 2020. DOI: 10.1016/j.isci.2020.101809.
[4] Linfeng Sun, Wei Wang, and Heejun Yang, “Recent Progress in Synaptic Devices Based on Two‐Dimensional Materials,” Advanced Intelligent Systems, 1900167, Feb. 2020. DOI: 10.1002/aisy.201900167.
2019
[5] Wei Wang, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Erika Covi, Yu-Hsuan Lin and Daniele Ielmini, “Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion—Part II: Compact Modeling.” IEEE Transactions on Electron Devices, 66 (9), 3802-3808, 2019. DOI: 10.1109/TED.2019.2928888.
[6] Wei Wang, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Erika Covi, Yu-Hsuan Lin and Daniele Ielmini, “Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion—Part I: Numerical Modeling.” IEEE Transactions on Electron Devices, 66 (9), 3795-3801, 2019. DOI: 10.1109/TED.2019.2928890.
[7] Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen, and Daniele Ielmini, “Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices.” Nature Communications 10 (1), 81, 2019. DOI: 10.1038/s41467-018-07979-0.
[8] Wei Wang, Giacomo Pedretti, Valerio Milo, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro Spinelli, and Daniele Ielmini, “Computing of Temporal Information in Spiking Neural Networks with ReRAM Synapses.” Faraday Discussions 213, 453-469, 2019. DOI: 10.1039/C8FD00097B.
[9] Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Wei Wang, and Daniele Ielmini, “Solving linear equations in one step with crosspoint resistive arrays.” Proceedings of the National Academy of Sciences (PNAS) 116 (22), 201815682, 2019. DOI: 10.1073/pnas.1815682116.
[10] Linan Li, Wenqiang Ba, Wei Wang, Ling Li, Guangwei Xu, Lingfei Wang, Zhuoyu Ji, Congyan Lu, and Writam Banerjee, “A Physical Model for Dual Gate a-InGaZnO Thin Film Transistors Based on Multiple Trapping and Release Mechanism.” Microelectronics Journal, 86, 1-6, 2019. DOI: 10.1016/j.mejo.2019.02.002.
[11] Mazakazu Aono, Christoph Baeumer, Philip Bartlett, Stefano Brivio, Geoffrey Burr, Monica Burriel, Emanuel Carlos, Sweety Deswal, Jonas Deuermeier, Regina Dittmann, Hongchu Du, Ella Gale, Sebastian Hambsch, Hans Hilgenkamp, Daniele Ielmini, Anthony J. Kenyon, Asal Kiazadeh, Andreas Kindsmüller, Gabriela Kissling, Itir Köymen, Stephan Menzel, Dolors Pla Asesio, Themis Prodromakis, Monica Santamaria, Alexander Shluger, Damien Thompson, Ilia Valov, Wei Wang, Rainer Waser, R. Stanley Williams, Dominik Wrana, Dirk Wouters, Yuchao Yang, and Andrea Zaffora, “Valence change ReRAMs (VCM) - Experiments and modelling: general discussion.” Faraday Discussions 213, 259–286, 2019. DOI: 10.1039/C8FD90057D.
[12] Philip Bartlett, Alexandra I. Berg, Marco Bernasconi, Simon Brown, Geoffrey Burr, Cina Foroutan-Nejad, Ella Gale, Ruomeng Huang, Daniele Ielmini, Gabriela Kissling, Vladimir Kolosov, Michael Kozicki, Hisao Nakamura, Konstantin Rushchanskii, Martin Salinga, Alexander Shluger, Damien Thompson, Ilia Valov, Wei Wang, Rainer Waser, and R. Stanley Williams, “Phase-change memories (PCM) – Experiments and modelling: general discussion.” Faraday Discussions 213, 393–420, 2019. DOI: 10.1039/C8FD90064G.
[13] Alexandra I. Berg, Stefano Brivio, Simon Brown, Geoffrey Burr, Sweety Deswal, Jonas Deuermeier, Ella Gale, Hyunsang Hwang, Daniele Ielmini, Giacomo Indiveri, Anthony J. Kenyon, Asal Kiazadeh, Itir Köymen, Michael Kozicki, Yang Li, Daniel Mannion, Themis Prodromakis, Carlo Ricciardi, Sebastian Siegel, Maximilian Speckbacher, Ilia Valov, Wei Wang, R. Stanley Williams, Dirk Wouters, and Yuchao Yang, “Synaptic and neuromorphic functions: general discussion.” Faraday Discussions 213, 553–578, 2019. DOI: 10.1039/C8FD90065E.
2018
[14] Wei Wang, Giacomo Pedretti, Valerio Milo, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro S. Spinelli, and Daniele Ielmini, "Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses." Science Advances 4 (9), eaat4752, 2018. DOI: 10.1126/sciadv.aat4752.
[15] Wei Wang, Guangwei Xu, M. Delwar H. Chowdhury, Hong Wang, Jae Kwang Um, Zhuoyu Ji, Nan Gao, et al, “Electric Field Modified Arrhenius Description of Charge Transport in Amorphous Oxide Semiconductor Thin Film Transistors.” Physical Review B 98 (24), 245308, 2018. DOI: 10.1103/PhysRevB.98.245308.
[16] Ming Wang, Wei Wang, Wan Ru Leow, Changjin Wan, Geng Chen, Yi Zeng, Jiancan Yu, et al, “Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold Switch.” Advanced Materials 30 (33), 1802516, 2018. DOI: 10.1002/adma.201802516.
[17] Guangwei Xu, Nan Gao, Congyan Lu, Wei Wang, Zhuoyu Ji, Chong Bi, Zhiheng Han, et al, “Bulk-Like Electrical Properties Induced by Contact-Limited Charge Transport in Organic Diodes: Revised Space Charge Limited Current.” Advanced Electronic Materials 4 (5), 1700493, 2018. DOI: 10.1002/aelm.201700493.
2017
[18] Wei Wang, Long Wang, Guangwei Xu, Nan Gao, Lingfei Wang, Zhuoyu Ji, Congyan Lu, Nianduan Lu, Ling Li, and Ming Liu, “Understanding Mobility Degeneration Mechanism in Organic Thin-Film Transistors (OTFT).” Chemical Physics Letters 681, 36–39, 2017. DOI: 10.1016/j.cplett.2017.05.044.
2016
[19] Lingfei Wang, Songang Peng, Wei Wang, Guangwei Xu, Zhuoyu Ji, Nianduan Lu, Ling Li, Zhi Jin, and Ming Liu, “Surface-Potential-Based Physical Compact Model for Graphene Field Effect Transistor.” Journal of Applied Physics 120 (8), 084509, 2016. DOI: 10.1063/1.4961609.
[20] Zhiheng Han, Guangwei Xu, Wei Wang, Congyan Lu, Nianduan Lu, Zhuoyu Ji, Ling Li, and Ming Liu, “Surface Potential Measurement on Contact Resistance of Amorphous-InGaZnO Thin Film Transistors by Kelvin Probe Force Microscopy.” Applied Physics Letters 109 (2), 023509, 2016. DOI: 10.1063/1.4958332.
[21] Congyan Lu, Zhuoyu Ji, Guangwei Xu, Wei Wang, Lingfei Wang, Zhiheng Han, Ling Li, and Ming Liu, “Progress in Flexible Organic Thin-Film Transistors and Integrated Circuits.” Science Bulletin 61 (14). 1081–1096, 2016. DOI: 10.1007/s11434-016-1115-x.
[22] Lingfei Wang, Wei Wang, Guangwei Xu, Zhuoyu Ji, Nianduan Lu, Ling Li, and Ming Liu, “Analytical Carrier Density and Quantum Capacitance for Graphene.” Applied Physics Letters 108 (1), 013503, 2016. DOI: 10.1063/1.4939229.
2015
[23] Guangwei Xu, Nianduan Lu, Wei Wang, Nan Gao, Zhuoyu Ji, Ling Li, and Ming Liu, “Universal Description of Exciton Diffusion Length in Organic Photovoltaic Cell.” Organic Electronics 23, 53–56, 2015. DOI: 10.1016/j.orgel.2015.04.006.
[24] Hong Wang#, Wei Wang#, Pengxiao Sun, Xiaohua Ma, Ling Li, Ming Liu, and Yue Hao, “Contact Length Scaling in Staggered Organic Thin-Film Transistors.” IEEE Electron Device Letters 36 (6), 609–611, 2015. DOI: 10.1109/LED.2015.2423000. (# equally contributed)
[25] Long Wang, Zhuoyu Ji, Congyan Lu, Wei Wang, Jingwei Guo, Ling Li, Dongmei Li, and Ming Liu, “Combining Bottom-Up and Top-Down Segmentation: A Way to Realize High-Performance Organic Circuit.” IEEE Electron Device Letters 36 (7): 684–686, 2015. DOI: 10.1109/LED.2015.2428614.
[26] Wei Wang, Ling Li, Congyan Lu, Yu Liu, Hangbing Lv, Guangwei Xu, Zhuoyu Ji, and Ming Liu, “Analysis of the Contact Resistance in Amorphous InGaZnO Thin Film Transistors.” Applied Physics Letters 107 (6), 063504, 2015. DOI: 10.1063/1.4928626.
[27] Lingfei Wang, Ling Li, Nianduan Lu, Zhuoyu Ji, Wei Wang, Zhiwei Zong, Guangwei Xu, and Ming Liu, “An Improved Cut-Off Frequency Model with a Modified Small-Signal Equivalent Circuit in Graphene Field-Effect Transistors.” IEEE Electron Device Letters 36 (12), 1351–1354, 2015. DOI: 10.1109/LED.2015.2489205.
[28] Guangwei Xu, Wei Wang, Long Wang, Zhiwei Zong, Congyan Lu, Lingfei Wang, Writam Banerjee, et al, “A Surface Potential-Based Gate-Leakage Current Model for Organic Thin-Film Transistors.” IEEE Transactions on Electron Devices 62 (12), 4225–4230, 2015. DOI: 10.1109/TED.2015.2487282.
2013
[29] Wei Wang, Ling Li, Zhuoyu Ji, Tianchun Ye, Nianduan Lu, Zhigang Li, Dongmei Li, and Ming Liu, “Modified Transmission Line Model for Bottom-Contact Organic Transistors.” IEEE Electron Device Letters 34 (10): 1301–1303, 2013. DOI: 10.1109/LED.2013.2278012.
Conference Proceedings
2019
[30] Z. Sun, G. Pedretti, E. Ambrosi, A. Bricalli, W. Wang, and D. Ielmini, “In-memory solution of linear systems with crosspoint arrays without iterations,” in Device Research Conference (DRC), 215–216, 2019. DOI: 10.1109/DRC46940.2019.9046477.
[31] Wei Wang, Erika Covi, Yu-Hsuan Lin, Elia Ambrosi, and Daniele Ielmini, “Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion”, In IEEE International Electron Device Meeting (IEDM), 32.3, 2019. DOI: 10.1109/IEDM19573.2019.8993625
[32] Erika Covi, Yu-Hsuan Lin, Wei Wang, T. Stecconi, Alessandro Bricalli, Elia Ambrosi, G. Pedretti, T.-Y. Tseng, and Daniele Ielmini, “A Volatile RRAM Synapse for Neuromorphic Computing”, In IEEE International Conference on Electronics, Circuits and Systems (ICECS), 903-906, 2019. DOI: 10.1109/ICECS46596.2019.8965044
2018
[33] Wei Wang, Alessandro Bricalli, Mario Laudato, Elia Ambrosi, Erika Covi, and Daniele Ielmini, "Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing." In IEEE International Electron Devices Meeting (IEDM), 40.3.1-40.3.4, 2018. DOI: 10.1109/IEDM.2018.8614556.
2016
[34] Wei Wang, Yang Li, Ming Wang, Lingfei Wang, Qi Liu, Writam Banerjee, Ling Li, and Ming Liu, “A Hardware Neural Network for Handwritten Digits Recognition Using Binary RRAM as Synaptic Weight Element.” In IEEE Silicon Nanoelectronics Workshop (SNW), 3, 50–51, 2016. DOI: 10.1109/SNW.2016.7577980.
2015
[35] Guangwei Xu, Wei Wang, Lingfei Wang, Zhuoyu Ji, Long Wang, Ling Li, and Ming Liu, “Origin of Mobility Degeneration at High Gate Bias in Organic Thin Film Transistors Based on Carriers’ Freeze to Surface Charges.” In IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 140–143, 2015. DOI: 10.1109/SISPAD.2015.7292278.
[36] Wei Wang, Ling Li, Zhuoyu Ji, Nianduan Lu, Congyan Lu, Guangwei Xu, and Ming Liu, “Monte Carlo Simulation of the Dynamic Charge Hopping Transport in Organic Thin Film Transistors.” In IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 132–135, 2015. DOI: 10.1109/SISPAD.2015.7292276.
[37] Wei Wang, Ling Li, Zhuoyu Ji, Congyan Lu, Yu Liu, Hangbing Lv, Guangwei Xu, and Ming Liu, “Analysis of the Temperature Dependent Contact Resistance in Amorphous InGaZnO Thin Film Transistors.” In 28th IEEE International Vacuum Nanoelectronics Conference (IVNC), 206–207, 2015. DOI: 10.1109/IVNC.2015.7225585.
[38] Lingfei Wang, Songang Peng, Zhiwei Zong, Ling Li, Wei Wang, Guangwei Xu, Nianduan Lu, Zhuoyu Ji, Zhi Jin, and Ming Liu, “A New Surface Potential Based Physical Compact Model for GFET in RF Applications.” In IEEE International Electron Devices Meeting (IEDM), 28.4.1-28.4.4, 2015. DOI: 10.1109/IEDM.2015.7409788.
2014
[39] Wei Wang, Zhuoyu Ji, Congyan Lu, Long Wang, Guangwei Xu, Ling Li, and Ming Liu, “An Organic Rectifier Diode Based on Poly-Pyrrole (PPy) Electrode.” In 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 1–3, 2014. DOI: 10.1109/ICSICT.2014.7021534.