Publications

2021

1. Sho Kuromatsu, Takeshi Watanabe, Yoshiyuki Nonoguchi, Tsuyoshi Kawai, Shinji Koh,
   "Development of Poly (methyl methacrylate)-Supported Transfer Technique of Single-Wall Carbon Nanotube Conductive Films for Flexible Devices,"
   Thin Solid Films, 736, 13894 (2021).

2. Seiya Nishimura, Yasushi Nanai, Shinji Koh, and Shingo Fuchi,
   "Luminescence properties of Tm2O3-doped germanate glass phosphors for near-infrared wideband light-source,"
   Journal of Materials Science: Materials in Electronics, 32, 14813-14822 (2021).

3. Shohei Kosuga, Shunichiro Nagata, Sho Kuromatsu, Ryosuke Suga, Takeshi Watanabe, Osamu Hashimoto, and Shinji Koh "Optically transparent antenna based on carrier-doped three-layer stacked graphene,"
   AIP Advances 11, 035136 (2021). The paper has been selected as a Featured Article.

2020

1. Keiishu Miki, Takeshi Watanabe, Shinji Koh
   "Electrochemical characterization of CVD-grown graphene for designing electrode/biomolecule interface,"
   Crystals, 10, 241 (2020). OPEN ACCESS

2. Atsushi Sakurai, Masaya Niki, Takeshi Watanabe, Atsuhito Sawabe, and Shinji Koh
   "Reusability of Ir(111)/α-Al2O3(0001) substrates in graphene chemical vapor deposition growth,"
   Japanese Journal of Applied Physics, 59, SIID01 (2020).

3. T.Intaro, J.Hodaka, P.Suwanyangyaun, R.Botta, N.Nuntawong, M.Niki, S.Kosuga, T.Watanabe, S.Koh, T.Taychatanapat, S.Sanorpim
   "Characterization of graphene grown by direct-liquid-injection CVD with cyclohexane precursor in N2 ambient,"
   Diamond and Related Materials, 104, 107710, (2020).

2018

1. Shohei Kosuga, Keisuke Suga, Ryosuke Suga, Takeshi Watanabe, Osamu Hashimoto, and Shinji Koh
   "Radiation properties of graphene-based optically transparent dipole antenna,"
   Microwave and Optical Technology Letters, 60, 2992-2998 (2018).

2. Yusuke Hara, Koushi Yoshihara, Kazuki Kondo, Shuhei Ogata, Takeshi Watanabe, Ayumi Ishii, Miki Hasegawa, and Shinji Koh
   "Making graphene luminescent by adsorption of an amphiphilic europium complex,"
   Appl. Phys. Lett. 112, 173103 (2018).

2017

1. Shohei Kosuga, Ryosuke Suga, Osamu Hashimoto, and Shinji Koh,
   "Graphene-Based Optically Transparent Dipole Antenna,"
   Appl. Phys. Lett. 110, 233102 (2017).

2016

1. Shinji Koh, Yuta Saito, Hideyuki Kodama, and Atsuhito Sawabe,
   "Epitaxial growth and electrochemical transfer of graphene on Ir(111)/alpha-Al2O3(0001) substrates,"
   Appl. Phys. Lett., 109, 023105 (2016).

2013

1. F. Matsui, R. Ishii, H. Matsuda, M. Morita, S. Kitagawa, T. Matsushita, S. Koh, and H. Daimon
   “Characterizing Edge and Stacking Structures of Exfoliated Graphene by Photoelectron Diffraction”
   Jpn. J. Appl. Phys. 52, 110110 (2013)

2. Y. Mulyana, M. Horita, Y. Ishikawa, Y. Uraoka, and S. Koh
   “Thermal reversibility in electrical characteristics of ultraviolet/ozone-treated graphene”,
   Appl. Phys. Lett. 103, 063107 (2013)

3. Y. Yasuda, S. Koh, K. Ikeda, H. Kawaguchi,
   “Crystal growth of InGaAs/InAlAs quantum wells on InP(110) by MBE”
   J. Cryst. Growth, 364, pp. 95-100 (2013).

2012

1. S. Iba, S. Koh, K. Ikeda and H. Kawaguchi,
   “Circularly polarized lasing over wide wavelength range in spin-controlled (110) vertical-cavity surface-emitting laser.” Solid State Communications, Vol. 152, Issue 16, pp. 1518-1521, (2012).

2011

1. S. Koh, S. Iba, K. Ikeda, and H. Kawaguchi,
   "Control of Electron Spin Relaxation Dynamics and Circularly Polarized Lasing in Semiconductor Lasers"
   Journal of The Surface Science Society of Japan, 32, 755-760 (2011) (in Japanese)

2. T. Katayama, A. Yanai, K. Yukawa, S. Hattori, K. Ikeda, S. Koh, and H. Kawaguchi,
   "All-Optical Flip-Flop Operation at 1-mA Bias Current in Polarization Bistable Vertical-Surface Emitting Lasers with An Oxide Confinement Structure"
   IEEE Photon. Technol. Lett. 23, pp. 1811-1813 (2011)

3. S. Koh, H. Ikeda, and H. Kawaguchi
   "Correlation between Morphology and Electron Spin Relaxation Time in GaAs/AlGaAs Quantum Wells on Misoriented GaAs(110) Substrates"
   J. Appl. Phys. 110, 043516 (2011)

4. S. Iba, S. Koh, K. Ikeda, and H. Kawaguchi,
   “Room temperature circularly polarized lasing in an optically spin injected vertical-cavity surface-emitting laser with (110) GaAs quantum wells”
   Appl. Phys. Lett. 98, 081113 (2011)

2010

1. S. Iba, S. Koh, and H. Kawaguchi,
   “Room Temperature Gate Modulation of Electron Spin Relaxation Time in (110)-Oriented GaAs/AlGaAs Quantum Wells” Appl. Phys. Lett. 97, 202102 (2010)

2. N. Yokota, K. Ikeda, S. Koh, and H. Kawaguchi,
   “Carrier Lifetime and Electron Spin Relaxation Time in (110)-oriented GaAs/AlGaAs Quantum Well Micro-posts”
   IEEE Photon. Technol. Lett. 22, pp. 1689-1691 (2010)

3. S. Koh, A. Nakanishi, and H. Kawaguchi,
   “Electron Spin Relaxation Time in GaAs/AlGaAs Multiple Quantum Wells Grown on Slightly Misoriented GaAs(110) Substrates” Appl. Phys. Lett. 97, 081111 (2010)

2009

1. K. Ikeda, T. fujimoto, H. Fujino, T. Katayama, S. Koh and H. Kawaguchi,
   “Switching of Lasing Circular Polarizations in a (110)-VCSEL”
   IEEE Photon. Technol. Lett. 21, pp. 1350-1352 (2009)

2. H. Fujino, S. Koh, S. Iba, T. Fujimoto and H. Kawaguchi,
   “Circularly polarized lasing in a (110)-oriented quantum well vertical-cavity surface-emitting laser under optical spin injection” Appl. Phys. Lett., 94, 131108 (2009)

3. S. Iba, H. Fujino, T. Fujimoto, S. Koh, and H. Kawaguchi,
   “Correlation between electron spin relaxation time and hetero-interface roughness in (110)-oriented GaAs/AlGaAs multiple-quantum wells” Physica E 41, 870 (2009)

2008

1. M. Satoh, K. Arimoto, K. Nakagawa, S. Koh, K. Sawano, Y. Shiraki, N. Usami, K. Nakajima,
   “Acceptorlike behavior of defects in SiGe alloys grown by molecular beam epitaxy”,
   Jpn. J. Appl. Phys. 47, pp. 4630-4633 (2008)

2007

1. X. Huang, S. Koh, and S. Uda,
   “Effect of an external electric field on the crystal growth process of YBCO superconductive oxide”,
   J. Cryst. Growth 307, 432-439 (2007)

2. S. Koh, S. Uda, M. Nishida, X. Huang
   “Partitioning of ionic species and crystallization electromotive force in the growth of LiNbO3 and Li2B4O7”
   J. Cryst. Growth 306, 406-412 (2007)

2006

1. S. Koh, S. Uda, M. Nishida, X. Huang
   “Study of the mechanism of crystallization electromotive force during growth of congruent LiNbO3 using a micro-pulling-down method”
   J. Cryst. Growth. 297, 247-258 (2006)

2. X. Huang, S. Uda, X. Yao and S. Koh
   “In situ observation of crystal growth process of YBCO superconductive oxide with an external electric field”
   J. Cryst. Growth, 294, 420-426 (2006)

3. S. Uda, S. Koh and X. Huang
   “The electric field-induced transformation of the melting state of langasite from incongruent into congruent”
   J. Cryst. Growth, 292, 1-4 (2006)

4. K. Arimoto, J. Yamanaka, K. Nakagawa, Y. Sawano, S. Koh and N. Usami
   “Determination of lattice parameters of SiGe/Si(110) heterostructures”
   Thin Solid Films, 508, 132-135 (2006)

2005

1. S. Uda, X. Huang and S. Koh
   “Transformation of the incongruent-melting state to the congruent-melting state via an external electric field for the growth of langasite”
   J. Cryst. Growth, 281, 481-491 (2005)

2. M. Wilde, K. Fukutani, S. Koh, K. Suwano and Y. Shiraki
   “Quantitative coverage and stability of hydrogen-passivation layers on HF-etched Si(1-x)Gex surfaces”
   J. Appl. Phys., 98, Art. No.023503 (2005)

3. M. Myronov, T. Irisawa, S. Koh, OA. Mironov, TE. Whall, EHC. Parker and Y. Shiraki
   “Temperature dependence of transport properties of high mobility holes in Ge quantum wells”
   J. Appl. Phys., 97, Art. No.083701 (2005)

4. X. Huang, S. Koh, K. Wu, M. Chen, T. Hoshikawa, K. Hoshikawa and S. Uda
   “Reaction at the interface between Si melt and a Ba-doped silica crucible”
   J. Cryst. Growth, 277, 154-161 (2005)

5. PW. Chien, SL. Wu, SJ. Chang, S. Koh and Y. Shiraki
   “High-performance SiGe heterostructure FET grown on silicon-on-insulator”
   Materials Science in Semiconductor Processing, 8, 367-370 (2005)

6. K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki and N. Usami
   “Changes in elastic deformation of strained Si by microfabrication”
   Materials Science in Semiconductor Processing, 8, 181-185 (2005)

7. K. Sawano, N. Usami, K. Arimoto, S. Koh, K. Nakagawa and Y. Shiraki
   “Observation of strain field fluctuation in SiGe-relaxed buffer layers and its influence on overgrown structures”Materials Science in Semiconductor Processing, 8, 177-180 (2005)

8. J. Yamanaka, K. Sawano, K. Nakagawa, K. Suzuki, Y. Ozawa, S. Koh, T. Hattori and Y. Shiraki
   “Observation of dislocations in strain-relaxed silicon-germanium thin films with flat surfaces grown on ion-implanted silicon substrates”
   Material Science in Semiconductor Processing, 7, 289-392 (2004)

2004

1. K. Sawano, S. Koh, Y. Shiraki, Y. Ozawa, T. Hattori, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa and N. Usami
   “Fabrication of high-quality strain-relaxed thin SiGe layers by ion- implanted Si substrates”
   Appl. Phys. Lett., 85, 2514-2516 (2004)

2. J. Yamanaka, K. Sawano, K. Nakagawa, K. Suzuki, Y. Ozawa, S. Koh, T. Hattori and Y. Shiraki
   “Strain relaxation and induced defects in SiGe thin films grown on ion- implanted Si substrates“
   Material Trans., 45, 2644-2646 (2004)

3. SL. WU, PW. Chien, SJ. Chang, S. Koh and Y. Shiraki
   “Influences of delta-doping position on the characteristics of SiGe-Si DCFETs”
   IEEE ELECTRON DEVICE LETTERS, 25, 477-479 (2004)

4. K. Ohdaira, H. Murata, S. Koh, M. Baba, H. Akiyama, R. Ito, and Y. Shiraki
   “Observation of band alignment transition from type-I to type-II in AlInAs/AlGaAs self-assembled quantum dots”
   J. Phys. Soc. Jpn. 72, 3271-3275 (2004)

5. K.Ohdaira, K. Ono, K. Uchida, S. Koh, N. Miura, and Y. Shiraki
   “Magneto-photoluminescence studies of AlInAs/AlGaAs self-assembled quantum dots with type-II band alignment”
   J. Phys. Soc. Jpn. 73, 480-484 (2004)

6. K. Ohdaira, H. Murata, S. Koh, M. Baba, H. Akiyama, R. Ito, and Y. Shiraki
   “Control of type-I and type-II band alignments in AlInAs/AlGaAs self-assembled quantum dots by changing AlGaAs compositions”
   Physica E 21, 308-311 (2004)

7. K. Sawano, S. Koh, Y. Hirose, T. Hattori, K. Nakagawa, and Y. Shiraki
   “Formation of thin SiGe virtual substrates by ion implantation into Si substrates”
   Appl. Surf. Sci. 224, 99-103 (2004)

8. S. Koh, K. Konishi and Y. Shiraki
   ”Small and high-density GeSiC dots stacked on buried Ge hut-clusters in Si”
   Physica E 21, 440-444 (2004)

2003

1. Y. M. Lin, S. L. Wu, S. J. Chang, S. Koh and Y. Shiraki
   “P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor”
   Jpn. J. Appl. Phys., 42, L1422-L1424 (2003)

2. K. Sawano, K. Kawaguchi, S. Koh, Y. Hirose, K. Nakagawa, T. Hattori, and Y. Shiraki
   ”Surface Planarization of Strain-Relaxed SiGe Buffer Layers by CMP and Post Cleaning”
   J. Electrochem. Soc., 150, G376-G379 (2003)

3. K. Sawano, Y. Hirose, Y. Ozawa, S. Koh, J. Yamanaka, K. Nakagawa, T. Hattori, and Y. Shiraki
   ”Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates”
   Jpn. J. Appl. Phys., 42, L735-L737 (2003)

4. S. Nakatani, T. Sumitani, A. Nojima, T. Takahashi, K. Hirano, S. Koh, T. Irisawa, and Y. Shiraki
   “Characterization of amorphous-Si/1ML-Ge/Si(001) interface structure by X-ray standing waves”
   Jpn. J. Appl. Phys., 42, 7050-7052 (2003)

5. S. Kusano, S. Nakatani, T. Takahashi, K. Hirano, S. Koh, M. Ebihara, T. Kondo, and R. Ito
   ”Study on Sublattice Reversal in a GaAs/Ge/GaAs(001) Crystal by X-ray Standing Waves”
   Jpn. J. Appl. Phys., 42, 2582-2586 (2003)

6. T. Irisawa, S. Koh, K. Nakagawa, and Y. Shiraki
   ”Growth of SiGe/Ge/SiGe Heterostructures With Ultrahigh Hole Mobility and their Device Application”
   J. Cryst. Growth, 251, 670-675 (2003)

7. K. Sawano, S. Koh, Y. Shiraki, N. Usmai, and K. Nakagawa
   “In-plane strain fluctuation in strained-Si/SiGe heterostructures”
   Appl. Phys. Lett., 83, 4339-4341 (2003)

8. K. Sawano, Y. Hirose, S. Koh, K. Nakagawa, T. Hattori, and Y. Shiraki
   ”Relaxation Enhancement of SiGe Thin Layers by Ion Implantation into Si Substrates”
   J. Cryst. Growth, 251, 685 -688 (2003)

9. K. Sawano, K. Arimoto, Y. Hirose, S. Koh, N. Usami, K. Nakagawa, T. Hattori, and Y. Shiraki
   ”Planarization of SiGe Virtual Substrates by CMP and its Application to Strained Si Modulation-Doped Structures”
   J. Cryst. Growth, 251, 693-696 (2003)

10. T. Irisawa, M. Myronov, O. A. Myronov, E.H.C. Parker, K. Nakagawa, M. Murata, S. Koh, and Y. Shiraki
    ”Hole Density Dependence of Effective Mass, Mobility and Transport Time in Strained Ge Channel Modulation-Doped Heterostructures”
    Appl. Phys. Lett., 82, 1425-1427 (2003)

11. K. Sumitani, T. Takahashi, S. Nakatani, A. Nojima, O. Sakata, Y. Yoda, S. Koh, T. Irisawa, and Y. Shiraki
    ”Three-Dimensional Reconstruction of Atoms in Surface X-Ray Diffraction”
    Jpn. J. Appl. Phys., 42, L189-L191 (2003)

12. Y. Min Lin, SL. Wu, SJ. Chang, S. Koh, and Y. Shiraki
    ”SiGe Heterostructures Field-Effect Transistors Using V-Shaped Confining Potential Well”
    IEEE Electron Device Lett., 24, 69-71 (2003)

13. S. Koh, K. Murata, T. Irisawa, K. Nakagawa, and Y. Shiraki
    ”Hole Transport Properties of B-Doped Relaxed SiGe Epitaxial Films Grown by Molecular Beam Epitaxy”
    J. Cryst. Growth, 251, 689-692 (2003)

2002

1. PW. Chien, SL. Wu, SC. Lee, SJ. Chang, H. Miura, S. Koh, and Y. Shiraki
   ”P-type Delta-Doped SiGe/Si Heterostructure Field Effect Transistors”
   Electron. Lett., 38, 1289-1291 (2002)

2. K. Sawano, S. Koh, Y. Shiraki, Y. Hirose, T. Hattori, and K. Nakagawa
   ”Mobility Enhancement in Strained Si Modulation-Doped Structures by Chemical Mechanical Polishing”
   Appl. Phys. Lett., 82, 412-414 (2002)

3. CH. Lee, SL. Wu, SJ. Chang, A. Miura, S. Koh, and Y. Shiraki
   ”A Novel Triple Delta-Doped SiGe Heterostructure Field-Effect Transistor”
   Jpn. J. Appl. Phys. part2, 41, L1212-L1215 (2002)

4. K. Kawaguchi, S. Koh, Y. Shiraki, and J. Zhang
   ”Fabrication of Strain-Balanced Si0.73Ge0.27/Si Distributed Bragg Reflectors on Si Substrates for Optical Device Applications” Physica E, 13, 1051-1054 (2002)

5. K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki
   ”Optical Properties of Strain-Balanced SiGe Planar Microcavities with Ge Dots on Si Substrates”
   Appl. Phys. Lett., 81, 817-820 (2002)

6. T. Irisawa, S. Tokumitsu, T. Hattori, K. Nakgawa, S. Koh, and Y. Shiraki
   ”Ultrahigh Room-Temperature Hole Hall and Effective Mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 Heterostructures”
   Appl. Phys. Lett., 81, 847-850 (2002)

7. K. Kawaguchi, K. Konishi, S. Koh, Y. Shiraki, Y Kaneko, and J. Zhang
   ”Optical Properties of Strain-Balanced Si0.73Ge0.27 Planar Microcavities on Si Substrates”
   Jpn. J. Appl. Phys. part1, 41, 2664-2667 (2002)

8. M. Myronov, T. Irisawa, OA. Myronov, S. Koh, Y. Shiraki, TE. Whall, and EHC. Parker
   ”Extremely High Room-Temperature Two-Dimensional Hole Gas Mobility in Ge/Si0.33Ge0.67/Si(001) p-type Modulation-Doped Heterostructures”
   Appl. Phys. Lett., 80, 3117-3119 (2002)

9. H. Takamiya, M. Miura, J. Mitsui, S. Koh, T. Hattori, and Y. Shiraki
   ”Size Reduction of the Ge Islands by Utilizing the Strain Fields from the Lower-Temperature-Grown Hut-Clusters Buried in the Si Matrix”
   Materials Science & Engineering B, 89, 58-61 (2002)

10. K. Sawano, K. Kawaguchi, T. Ueno, S. Koh, K. Nakagawa, and Y. Shiraki
    ”Surface Smoothing of SiGe Strain-Relaxed Buffer Layers by Chemical Mechanical Polishing”
    Materials Science & Engineering B, 89, 406-409 (2002)

2001

1. N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, S. Koh, Y. Shiraki, B. Zhang, Y. Segawa, and S. Kodama
   ”Molecular Beam Epitaxy of GaAs on Nearly Lattice-Matched SiGe Substrates Grown by the Multicomponent Zone-Melting Method”
   Semiconductor Science and Technology, 16, 699-703 (2001)

2. K. Kawaguchi, S. Koh, Y. Shiraki, and J. Zhang
   ”Fabrication of Strain-Balanced Si0.73Ge0.27/Si Distributed Bragg Reflectors on Si Substrates”
   Appl. Phys. Lett., 79, 476-479 (2001)

3. S. Koh, T. Kondo, Y. Shiraki, and R. Ito
   ”GaAs/Ge/GaAs Sublattice Reversal Epitaxy and its Application to Nonlinear Optical Devices”
   J. Cryst. Growth, 227-228, 183-192 (2001)

~2000

1. N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, S. Koh, Y. Shiraki, B. Zhang, Y. Segawa, and S. Kodama
   ”SiGe Bulk Crystal as a Lattice-Matched Substrate to GaAs for Solar Cell Applications”
   Appl. Phys. Lett., 77, 3565-3567 (2000)

2. T. Kondo, S. Koh, Y. Shiraki, and R. Ito
   ”Sublattice Reversal Epitaxy a Novel Technique for Fabricating Domain-Inverted Compound Semiconductor Structures”
   Sci. Tech. Advanced Materials, 1, 173-179 (2000)

3. S. Koh, T. Kondo, T. Ishiwada, H. Sawada, H. Ichinose, I. Shoji, and R. Ito
   ”Characterization of Sublattice-Reversed GaAs by Reflection High Energy Electron Diffraction and Transmission Electron Microscopy”
   Physica E, 7, 876-880 (2000)

4. S. Nakatani, S. Kusano, T. Takahashi, K. Hirano, S. Koh, T. Kondo, and R. Ito
   ”Study of Sublattice Inversion in GaAs/Ge/GaAs(001) Crystal by X-ray Diffraction”
   Appl. Surf. Sci., 159-160, 256-259 (2000)

5. S. Koh, T. Kondo, M.Ebihara, T. Ishiwada, H. Sawada, H. Ichinose, I. Shoji, and R. Ito
   ”GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices”
   Jpn. J. Appl. Phys., 38, L508-L511 (1999)

6. S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, and R. Ito
   ”Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy”
   Jpn. J. Appl. Phys. Express Letter, 37, L1493-L1496 (1998)