“Nonvolatile memory device with quantum dots and graphene layers”
May 2012 - Apr. 2015 (Principal Investigator :174,150,000 \ ($ 170,000) The National Research Foundation of Korea. )
“Electron beam irradiation to oxide thin film for resistive switching nonvolatile memory”
Jun. 2012– May 2013 (Principal Investigator : \ 30,000,000 ($ 27,000) by The National Research Foundation of Korea).
“Electrical characterization of nonvolatile memory device with organic and inorganic nano-hybrid structure”
Sep. 2010 ~ Aug. 2011. (Principal Investigator: \ 28,000,000 ($ 25,000) by The National Research Foundation of Korea)
“3-D tunneling bandgap flash memory development”
Sep. 2009~Jul. 2011. National Program for 0.1 Terabit Non Volatile Memory Devices, Ministry of Knowledge Economy
“Growth of hybrid nano-structures with non-polar ZnO/GaN system by plasma assisted physical vapor deposition”
Sep. 2010. The National Research Foundation of Korea.
“High-reliability 3-D NFGM device”
Aug. 2009~Jun. 2009. National Program for 0.1 Terabit Non Volatile Memory Devices, Ministry of Knowledge Economy
“Electrical characterization of wideband gap semiconductor irradiated by electron beams”
Apr. 2007 ~ Mar. 2008. Korea Science and Engineering Foundation.
“Study on generated defects in GaN during high-energy electron-beam irradiation”
Jun. 2005 ~ Mar. 2006. Korea Science and Engineering Foundation.
“Formation of NFGM structure based on nano-particles of metal-oxide semiconductors”
Jul. 2004~Jul. 2007. National Program for 0.1 Terabit Non Volatile Memory Devices, Ministry of Knowledge Economy.
“Hybrid quantum structure of semiconductor and magnetic materials for spinics application”
Apr. 2005 ~ Mar. 2010.Ministry of Education, Science And Technology
Current Research Project (Principal Investigator)