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Oscar D. Restrepo
Oscar D. Restrepo
Senior Member of Technical Staff, GLOBALFOUNDRIES
Senior Member of Technical Staff, GLOBALFOUNDRIES
400 Stone Break Road Extension, Malta, NY 12020
oscarrest()gmail.com (replace () with @)
I use advanced computational/analytical techniques for the characterization and design of technologically relevant nanoelectronic materials and devices.
I use advanced computational/analytical techniques for the characterization and design of technologically relevant nanoelectronic materials and devices.
SKILLS
SKILLS
TCAD Thermal and thermo-mechanical modeling from device to die to package levels
TCAD Thermal and thermo-mechanical modeling from device to die to package levels
Charge, Thermal and Spin transport (Boltzmann, Ballistic and tunneling transport)
Charge, Thermal and Spin transport (Boltzmann, Ballistic and tunneling transport)
Density Functional Theory
Density Functional Theory
Effective Work Function and Defect modeling in semiconductors
Effective Work Function and Defect modeling in semiconductors
Magnetism in complex oxide
Magnetism in complex oxide
Molecular Dynamics
Molecular Dynamics
Electronic excitations
Electronic excitations
Python , Fortran, UNIX
Python , Fortran, UNIX
Parallel (MPI) and high performance computing
Parallel (MPI) and high performance computing
SENTAURUS SINTERCONNECT TCAD, Heatwave, QuantumATK, VASP, WIEN2K, QUANTUM ESPRESSO, EXCITING, ELK.
SENTAURUS SINTERCONNECT TCAD, Heatwave, QuantumATK, VASP, WIEN2K, QUANTUM ESPRESSO, EXCITING, ELK.
15 patents, 38 publications, 52 talks/poster presentations at conferences
Press Coverage:
Press Coverage:
MAJOR ACHIEVEMENTS
Theoretical description of how magnetic fields can control heat-flow in semiconductors (phonon-induced magnetism; Nature mater., Ref. 24 in publication list).
Developed novel density-functional theory-based codes to calculate electronic mobilities limited by phonon and impurity scattering without any free parameters. Predictions for novel 2D semiconductors such as hydrogenated germanium give very high mobilities on the order of 18,000 cm2/Vs (Nature Commun.; ACS Nano, Refs. 7, 14, 15, 19, 20, and 22).
Contribution to the development of new reliable methods to calculate defect formation energies in semiconductors (J. Mater. Sci., Refs. 9, 11, and 14).
Predicted for the first time from first-principles spin relaxation times for spintronics materials (silicon, diamond, graphite, and graphene) without the need of free parameters (Phys. Rev. Lett., Ref. 13).
Developed novel method to predict polarization charges at interfaces in polar III-V compounds, applied to AlN/GaN junctions (Ref. 10).
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