Research Area : High-K dielectrics
Office : Engineering Building 5, RM #330
E-Mail : cks50865@naver.com
Birth date : 2000.03.19
Hanyang University, Ansan, Korea
Research advisor : Professor Ji-Hoon Ahn
B. S. in Department of Materials Science and Chemical Engineering (2019. 03 - 2025. 02)
Hanyang University, Ansan, Korea
2. "Atomic Layer Deposition of MoO₂ Using a Tetravalent Precursor for Template-Driven Rutile TiO₂ Growth in DRAM Capacitors"
Applied Surface Science, 728, 166101 (2026).
Yoonchul Shin, Yeon-Ji Jeon, Ji Hwan Kim, Chan-Bin Hong, Chang Mo Yoon, Dong-Won Kwon, Se Yun Kim*, Ji-Hoon Ahn*
1. "Investigating potential use of TiO2 as conductive-like layer in DRAM capacitors"
Applied Surface Science, 720, Part A, 165104 (2026). [link]
Yoonchul Shin, Yeon-Ji Jeon, Ji Hwan Kim, Chan-Bin Hong, Chang Mo Yoon*, Ji-Hoon Ahn*
2. "Effects of Al Doping Position in Rutile TiO2 Thin Films Deposited via Atomic Layer Deposition" - Domestic
The Korean Ceramic Society, Spring Conference (2025), Korea
Chan-Bin Hong, Yoon-Chul Shin, Yeon-Ji Jeon, Ji-Hwan Kim and Ji-Hoon Ahn*
1. "Position-Dependent Al Doping Effects in Rutile Phased TiO2 Thin Films Deposited by Atomic Layer Deposition" - Domestic
The 32nd Korean Conference on Semiconductors (KCS 2025), Korea
Chan-Bin Hong, Yoon-Chul Shin, Yeon-Ji Jeon, Ji-Hwan Kim and Ji-Hoon Ahn*