Research Area : Ferroelectric devices
Office : Engineering Building 5, RM #330
E-Mail : angela6475@naver.com
Birth date : 2000.06.03
Hanyang University, Ansan, Korea
Research advisor : Professor Ji-Hoon Ahn
B. S. in Department of Materials Science and Chemical Engineering (2020. 03 - 2024. 02)
Hanyang University, Ansan, Korea
The 32nd Korean Conference in Semiconductors (KCS 2025), Korea
Hye-Won Cho, Na-Gyeong Kang, Hyo-Bae Kim, Gunho Kim, Hyungseok Lee and Ji-Hoon Ahn*
The Korean International Semiconductor Conference & Exhibition on Manufacturing Technology (KISM 2024), Korea
Hye Won Cho, Hyo-Bae Kim, Seung-Eon Ahn, and Ji-Hoon Ahn*
The Korea conference of Semiconductor·Display Technology (KCSDT 2024), Korea
Hye-Won Cho, Hyo-Bae Kim, Seung-Eon Ahn, and Ji-Hoon Ahn*
1. "Enhanced Ferroelectricity of Hf1-xZrxO2 Deposited via Atomic Layer Deposition Using a Novel Precursor with Improved Thermal Stability" - Domestic
The 31th Korean Conference on Semiconductors (KCS 2024), Korea
Hye-Won Cho, Hyo-Bae Kim, Seung-Eon Ahn, and Ji-Hoon Ahn*