Research Area : Ferroelectric devices
Office : Engineering Building 5, RM #330
E-Mail : hs7037@naver.com
Birth date : 1999.04.04
Hanyang University, Ansan, Korea
Research advisor : Professor Ji-Hoon Ahn
B. S. in Department of Materials Science and Chemical Engineering (2019. 03 - 2025. 02)
Hanyang University, Ansan, Korea
2. "Deposition-driven phase evolution in Hf₁₋ₓZrₓO₂ Enabled by a thermally stabilized cyclopentadienyl precursor system"
Chemistry of Materials, 38(11), 5600-5610 (2026).
Hye-Won Cho, Hyo-Bae Kim, Gunho Kim, Hyungseok Lee, Jin Sik Kim, Byung-Kwan Kim, Chang Mo Yoon, Ji-Hoon Ahn*
1. "Thickness-dependent shift of the ferroelctric composition window in ultrathin Hf₁₋ₓZrₓO₂ thin films"
Applied Surface Science, 741, 167125 (2026).
Gunho Kim, Hyo-Bae Kim, Hye-Won Cho, Hyungseok Lee, Wonwoo Kho, Seung-Eon Ahn, Ji-Hoon Ahn*
1. "Improvement of Remanent Polarization in MFIFM Using a High-k Interlayer " - Domestic
The 32nd Korean Conference on Semiconductors (KCS 2025), Korea
Hyungseok Lee, Hyo-Bae Kim, Gunho Kim, Hye-won Cho and Ji-Hoon Ahn*