Research Area : Ferroelectric devices
Office : Engineering Building 5, RM #324
E-Mail : ho2752@naver.com
Birth date : 1999.07.13
Hanyang University, Ansan, Korea
Research advisor : Professor Ji-Hoon Ahn
B. S. in Department of Materials Science and Chemical Engineering (2018. 03 - 2024. 02)
Hanyang University, Ansan, Korea
10-2023-0120103, Korea
안지훈, 김건호
The Korean International Semiconductor Conference & Exhibition on Manufacturing Technology (KISM 2024), Korea
Gunho Kim, Hyo Bae Kim, Wonwoo Kho, Yoomi Kang, Seung-Eon Ahn, and Ji-Hoon Ahn*
The 31th Korean Conference in Semiconductors (KCS 2024), Korea
Gunho Kim, Hyo-Bae Kim, Wonwoo Kho, Yoomi Kang, Seung-Eon Ahn, and Ji-Hoon Ahn*
1. "Stable Ferroelectric Properties of Sub-5 nm Hafnium-Zirconium-Oxide Thin Films Deposited via Atomic Layer Deposition" - International
The 7th International Conference on Advanced Electromaterials (ICAE 2023), Korea
Gunho Kim, Hyo-Bae Kim, Wonwoo Kho, Seung-Eon Ahn, and Ji-Hoon Ahn*