STUDENTS

Education

M.S. & Ph.D. Integrated Course in Materials Science and Chemical Engineering  (2020.03 -)

Hanyang University, Ansan, Korea

Research advisor : Professor Ji-Hoon Ahn

B. S. in Electronic Materials Science and Engineering​ (2014. 03 - 2020. 02)

Korea Maritime & Ocean University, Busan, Korea

Publications

17. "High-performance negative capacitance field-effect transistors with synthetic monolayer MoS2 "

ACS nano, 19(18) 17503-17513 (2025). 

Moonyoung Jung†, Hyo-Bae Kim†, Yungyeong Park†, Jeongmin Park, Hyunseo Lee, Seunghyun Oh, Ki Kang Kim, Ji-Hoon Ahn*, Yeonghun Lee*, Junhong Na*, Dongseok Suh* 

16. "Unintended Soft Breakdown Mechanism Limiting Ultrathin Ferroelectric HZO Films"

ACS Applied Electronic Materials, 7(9) 4114-4124 (2025). 

Wonwoo Kho, Hyunjoo Hwang, Hyo-Bae Kim, GunHo Kim, Ji-Hoon Ahn, Seung-Eon Ahn*

15. "Enhancing InGaZnO transistor current through high-κ dielectrics and interface trap extraction using single-pulse charge pumping"

Scientific Reports, accepted (2025). 

JaeHyeong Park, Hyo-Bae Kim, Sang Min Yu, Kihwan Kim, Ju Heyuck Baeck, Jiyong Noh, Kwon-Shik Park, Soo-Young Yoon, Ji-Hoon Ahn*, Saeroonter Oh*  

14. "Highly area-selective atomic layer deposition of device-quality Hf1-xZrxO2 thin films through catalytic local activation"

Chemical Engineering Journal, 488 150760 (2024). 

Hyo-Bae Kim†, Jeong-Min Lee†, Dougyong Sung, Ji-Hoon Ahn* , Woo-Hee Kim*  

13. "First demonstartion of  2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with record-long multibit retention time of > 4-bit and > 2000 s "

Nanoscale, 16 16467-16476 (2024). 

Tae Hyeon Noh†, Simin Chen†, Hyo-Bae Kim. Taewon Jin, Seoung min Park, Seong Ui An, Xinkai Sun, Sang-Hyeon Kim, Jae-Hoon Han, Ji-Hoon Ahn* , Dae-Hwan Ahn*, Younghyun Kim* 

12. "Spike optimization to improve properties of ferroelectric tunnel junction synaptic devices for neuromorphic computing system applications" 

Nanomaterials, 13(19) 2704 (2023). 

Jisu Byun, Wonwoo Kho, Hyunjoo Hwang, Yoomi Kang, Minjeong Kang, Taewan Noh, Hoseong Kim, Jimin Lee, Hyo-Bae Kim, Ji-Hoon Ahn, Seung-Eon Ahn*  

11. "Yttrium doping effects on ferroelectricity and electric properties of as-deposited Hf1-xZrxO2 thin films via atomic layer deposition" 

Nanomaterials, 13(15) 2187 (2023). 

Youkyoung Oh, Seung Won Lee, Jeong-Hun Choi, Seung-Eon Ahn, Hyo-Bae Kim*,  Ji-Hoon Ahn*  

10. "Enhanced dielectric and energy storage performances of Hf0.6Zr0.4O2 thin films by Al doping"

Ceramics International, accepted (2023). 

Seung Won Lee†, Min Ji Jeong†, Youkyoung Oh, Hyo-Bae Kim, Tae-Eon Park,  Ji-Hoon Ahn  

9. "Effects of Zr content and annealing on ferroelectricity of as-grown crystalline Hf1-xZrxO2 thin films using Hf[Cp(NMe2)3] and Zr[Cp(NMe2)3] precursors via atomic layer deposition"

Ceramics International, 48(17), 25661-25665 (2022).

Youkyoung Oh, Hyo-Bae Kim,  Seung Won Lee, Min Ji Jeong, Tae Joo Park*,  Ji-Hoon Ahn*

8. "Equivalent oxide thickness scalability of Zr-rich ZrHfO2 thin films by Al-doping"

Materials Letters,  321, 132418 (2022).

Min Ji Jeong, Seung Won Lee, Hyo-Bae Kim, Youkyoung Oh, Ju Hun Lee*, Ji-Hoon Ahn*

7. "A simple strategy to realize super stable ferroelectric capacitor via interface engineering"

Advanced Materials Interfaces, 9(15), 2102528 (2022).

Hyo-Bae Kim, Kyun Seong Dae, Youkyoung Oh, Seung-Won Lee, Yoseop Lee, Seung-Eon Ahn, Jae Hyuck Jang*, Ji-Hoon Ahn*

6. "Highly Stable Artificial Synapses Based on Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications"

Advanced Materials Technologies, 7(7), 2101323 (2022). 

Sungmun Song, Woori Ham, Gyuil Park, Wonwoo Kho, Jisoo Kim, Hyunjoo Hwang, Hyo-Bae Kim, Hyunsun Song, Ji-Hoon Ahn, Seung-Eon Ahn 

5. "Evaluating the performance and characteristics of rutile TiO2 thin film for triboelectric nanogenerator (TENG)"

Journal of the Korean Institute of Surface Engineering, 54(6) 324-330 (2021). 

Ji-Hyeon Moon, Han-Jae Kim, Hyo-Bae Kim*, Ji-Hoon Ahn* 

4. "Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited via atomic layer deposition using cyclopentadienyl-based precursors without annealing"

Nanoscale, 13, 8524-8531 (2021). 

Hyo-Bae Kim†, Moonyoung Jung†, Youkyoung Oh,  Seung Won Lee, Dongseok Suh*, Ji-Hoon Ahn*

3. "Atomic layer deposited strontium niobate thin films as new high-k dielectrics"

Materials Letters, 286, 129220 (2021).

Seung Won Lee, Hyo-Bae Kim, Chang-Min Kim, Se-Hun Kwon*, Ji-Hoon Ahn*

2. "Enhanced electrical properties of ZrO2-TiN based capacitors by introducing ultrathin metal oxides"

Materials Letters, 279, 128490 (2020).

Dong-Kwon Lee†, Hyo-Bae Kim†, Se-Hun Kwon*, Ji-Hoon Ahn* 

1. "Effects of plasma conditions on sulfurization of MoO3 thin films and surface evolution for formation of MoS2 at low temperature"

Applied Surface Science, 532, 147462 (2020). 

Jeong-Hun Choi, Seung Won Lee, Hyo-Bae Kim, Ji-Hoon Ahn*

Patent

4. "HZO 강유전성 박막 구조체 및 그 제조 방법"

10-2025-0032950, Korea  

안지훈, 김효배  

3. "영역 선택적 원자층 증착법, 이를 위한 장치, 및 이를 통해 제조된 HZO 물질막 구조체"

10-2023-0107693, Korea  

김우희, 안지훈, 이정민, 김효배  

2. "강유전 커패시터의 성능 향상을 위한 전처리 방법 및 이를 포함하는 소자" 

10-2021-0146179, Korea  

안지훈, 김효배 

1. "강유전성 박막 구조체, 이의 제조방법 및 이를 포함하는 전자소자" 

10-2021-0059119, Korea  

안지훈, 김효배 

Conferences

12. "Enhanced Ferroelectric Phase in Ultra-Thin Hf1-xZrxO2 Films (Sub-3nm) via Interface Engineering" - Domestic

The 32nd Korean Conference on Semiconductors (KCS 2025), Korea  

Hyo-Bae Kim and Ji-Hoon Ahn*  

11. "Multi-Stack Capacitor Based on Ferroelectric Materials for Neuromorphic Computing" - International

The Korean International Semiconductor Conference & Exhibition on Manufacturing Technology (KISM 2024),  Korea

Hyo-Bae Kim and Ji-Hoon Ahn*  

10. "Multi-stack Ferroelectric Capacitor Based on Fluorite Structure Materials for Neuromorphic Computing" - Domestic

The 31th Korean Conference on Semiconductors (KCS 2024), Korea 

Hyo-Bae Kim , and Ji-Hoon Ahn* 

9. "Inhibitor-Free Area-Selective Atomic Layer Deposition of Device-Quality Hf1-xZrxO2 Thin Films" - International

The 29th International Conference on Atomic Layer Deposition (ALD/ALE 2023), USA  

Hyo-Bae Kim , Jeong-Min Lee, Woo-Hee Kim, and Ji-Hoon Ahn* 

8. "Multi-stack Ferroelectric Capacitor Based on Fluorite structure Materials for Neuromorphic Computing" - Domestic

The 30th International Symposium on the Physics of Semiconductors and Applications (ISPSA 2022), Korea  

Hyo-Bae Kim , and Ji-Hoon Ahn* 

7. "Inhibitor-Free Area-Selective Atomic Layer Deposition of Device-Quality Hf1-xZrxO2 Thin Films" - International

The 20th International Symposium on the Physics of Semiconductors and Applications (ISPSA 2022), Korea  

Hyo-Bae Kim , Jeong-Min Lee, Woo-Hee Kim, and Ji-Hoon Ahn* 

6. "A Simple Strategy to Realize Super Stable Ferroelectric Capacitor via Interface Engineering" - International

The 22nd International Conference on Atomic Layer Deposition (ALD 2022), Belgium  

Hyo-Bae Kim , Kyun Seong Dae, Jae Hyuck Jang, and Ji-Hoon Ahn* 

5. "Inherently Area-Selective Atomic Layer Deposition of Device-Quality Hf1-xZrxO2 Thin Films through Catalytic Local Activation" - Domestic

The 29th Korean Conference in Semiconductors (KCS 2022), Korea 

Hyo-Bae Kim , Jeong-Min Lee , Woo-Hee Kim, and Ji-Hoon Ahn* 

4. "A Simple Strategy to Improve Ferroelectric Performance of TiN/HfZrO2/TiN via Interface Engineering" - International

The 6th International Conference on Advanced Electromaterials (ICAE 2021), Korea 

Hyo-Bae Kim, Kyun Seong Dae, Youkyoung Oh, Jae Hyuck Jang, and Ji-Hoon Ahn 

3. "Ferroelectric Properties of Hf1-xZrxO2 Thin Films Deposited by Atomic Layer Deposition Using Cyclopentadienyl Cocktail-precursor Without Annealing Process" - Domestic

The 28th Korean Conference on Semiconductors (KCS 2021), Korea 

Hyo-Bae Kim, Moonyoung Jung, Seung Won Lee, Dongseok Suk, and Ji-Hoon Ahn*

2. "Improvement of ferroelectric properties of Hf1-xZrxO2 thin films using cyclopentadienyl-based cocktail precursors and interfacial treatment" - Domestic

The Korean Institute of Surface Engineering Fall Meeting (KISE 2020),  Korea 

Ji-Hyeon Moon, Han-Jae Kim, Hyo-Bae Kim*, Ji-Hoon Ahn* 

1. "Enhanced Electrical Properties of Hf0.5Zr0.5O2 Thin Films by Various Interface Pre-Treatment" - International

The 6th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2020), Korea  

Hyo-Bae Kim, Seung Won Lee, and Ji-Hoon Ahn*