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게시일: 2018. 8. 29 오후 11:10:11
New paper, entitled "Low power switching characteristics of CNT field effect transistor device with Al-doped ZrHfO2 gate dielectrics" has been accepted to Journal of Nanomaterials.
New paper, entitled "Low power switching characteristics of CNT field effect transistor device with Al-doped ZrHfO2 gate dielectrics" has been accepted to Journal of Nanomaterials.
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