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게시일: 2017. 5. 15 오전 1:02:36
New paper, entitled "Silicon oxide film deposited at room temperature using high-working-pressure plasma-enhanced chemical vapor deposition: Effect of O2 flow rate" has been accepted to Ceramics International.
New paper, entitled "Silicon oxide film deposited at room temperature using high-working-pressure plasma-enhanced chemical vapor deposition: Effect of O2 flow rate" has been accepted to Ceramics International.
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