SFSU
36. Semimetal–Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer-Scale Broadband Photonics- Hon-Loen Sinn, Aravindh Kumar, Eric Pop, Akm Newaz, Advanced Photonics Research. Article No. 2300029 https://doi.org/10.1002/adpr.202300029
35. Observation of Photoluminescence from a Natural van der Waals Heterostructure- Viviane Z. Costa, Bryce Baker, Hon-Loen Sinn, Addison Miller, K. Watanabe, T. Taniguchi, Akm Newaz-App. Phys. Lett. (arxiv) (2022)
34. Strong Effects of Interlayer Interaction on Valence-Band Splitting in Transition Metal Dichalcogenides-Garrett Benson, Viviane Zurdo Costa, Neal Border, Kentaro Yumigeta, Mark Blei, Sefaattin Tongay, K. Watanabe, T. Taniguchi, Andrew Ichimura, Santosh KC, Taha Salavati-fard, Bin Wang, Akm Newaz- Journal of Physical Chemistry C(2022)-arxiv.
33. Vibrational Properties of a Naturally Occurring Semiconducting van der Waals heterostructure-Authors: V. Z. Costa, Liangbo Liang, Sam Vaziri, Addison Miller, Eric Pop, A. K. M. Newaz ACS Journal of Physical Chemistry C, 125, 39, 21607–21613 (2021) (arxiv)
32. One-dimensional edge contact to encapsulated MoS2 with a superconductor- A. Seredinski, E. G. Arnault, V. Z. Costa, L. Zhao, T. F. Q. Larson, K. Watanabe, T. Taniguchi, F. Amet, A. K. M. Newaz, and G. Finkelstein, AIP Advances 11, 045312 (2021); https://doi.org/10.1063/5.0045009
31. Robust avalanche in GaN leading to record performance in avalanche photodiode-Dong Ji ; Burcu Ercan ; Garret Benson ; AKM Newaz ; Srabanti Chowdhury-2020 IEEE International Reliability Physics Symposium (IRPS)-DOI: 10.1109/IRPS45951.2020.9129299
30. 60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525 K-Dong Ji, Burcu Ercan, Garrett Benson, A. K. M. Newaz, and Srabanti Chowdhury-Appl. Phys. Lett. 116, 211102 (2020); https://doi.org/10.1063/1.5140005
29. Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals- Lee, Hao; Deshmukh, Sanchit; Wen, Jing; Costa, Viviane; Schuder, Joachim; Sanchez, Michael ; Ichimura, Andrew; Pop, Eric; Wang, Bin; Newaz, AKM- ACS Applied Materials and Interfaces (2019)
28. Gallium Nitride Photodetector Measurements of UV Emission from a Gaseous CH4/O2 Hybrid Rocket Igniter plume, Hannah S. Alpert, Ananth Saran Yalamarthy, Peter F. Satterthwaite, Elizabeth Jens, Jason Rabinovitch, Noah Scandrette, A.K.M. Newaz, Ashley C. Karp, Debbie G. Senesky- Arxiv (1902.02446) (IEEE Aerospace Conference 2019). DOI: 0.1109/AERO.2019.8741713
27. High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer Peter F. Satterthwaite, Ananth Saran Yalamarthy, Noah A. Scandrette†, A. K. M. Newaz, Debbie G. Senesky, ACS Photonics (2018), DOI: 10.1021/acsphotonics.8b01169
26. Large array fabrication of high performance monolayer MoS2 photodetectors Alexander E. Yore, Kirby K. H. Smithe, Sauraj Jha, Kyle Ray, Eric Pop and A. K. M. Newaz-Applied Physics Letters (2017).
25. Photoresponse of Natural van der Waals Heterostructures Kyle Ray, Alexander E. Yore, Tong Mou, Sauraj Jha, Kirby K. H. Smithe, Bin Wang , Eric Pop, and A. K. M. Newaz, ACS Nano (2017).
24. Visualization of Defect-Induced Excitonic Properties of the Edges and Grain Boundaries in Synthesized Monolayer Molybdenum Disulfide- Alexander Evan Yore, Kirby K. H. Smithe, Wendy Crumrine, Addison Miller, Jonathan A. Tuck, Brittany Redd, Eric Pop, Bin Wang, and AKM Newaz, Journal of Physical Chemistry-C, (2016).
23. Electrical Control of near-Field Energy Transfer between Quantum Dots and Two-Dimensional Semiconductors, Dhiraj Prasai, Andrey R. Klots, AKM Newaz, J. Scott Niezgoda, Noah J. Orfield, Carlos A. Escobar, Alex Wynn, Anatoly Efimov, G. Kane , Jennings, Sandra J. Rosenthal, and Kirill I. Bolotin, Nano Letters, (June, 2015)
Previous Institutions (SUNSYB, WASHU, VANDERBILT)
22. Electrical stress and total ionizing dose effects on MoS2 transistors C. X. Zhang, AKM Newaz, B. Wang, E. X. Zhang, G. X. Duan, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, K. I. Bolotin, S. T. PantelidesIEEE Trans. Nucl. Sci., VOL. 61, NO. 6, (2014)
21. Photocurrent spectroscopy of excitonic states in intrinsic two-dimensional semiconductors A. Klots*, A.K.M. Newaz*, B. Wang, D. Prasai, H. Krzyzanowska, D. Caudel, B. L. Ivanov, K. A. Velizhanin, A. Burger, D. G. Mandrus, N. Tolk, S. Pantelides, N. Tolk, K. Bolotin ” Nature Scientific Reports 4, 6608, (2014).
20. Electrical Control of Optical Properties of Monolayer MoS2 A.K.M. Newaz, D. Prasai, J. Ziegler, D. Caudel, S. Robinson, R. Haglund, K. Bolotin- (Fast Track Communications)-Solid State Comm. DOI: 10.1016/j.ssc.2012.11.010, (2013).
19. Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment A.K.M. Newaz, Yevgeniy S. Puzyrev, Bin Wang, Sokrates T. Pantelides, and K.I. Bolotin, Nature Communications-DOI:10.1038/ncomms1740, (2012).
18. Graphene transistor as a probe for streaming potential- A.K.M. Newaz, D. Markov, D. Prasai, K. Bolotin Nano Lett. DOI:10.1021/nl300603v (2012).
17. Photo Effects at the Schottky Interface in Extraordinary Optoconductance- L. C. Tran, F. M. Werner, A. K. M. Newaz, and S. A. Solin, J. App. Phys. 114, 153110 (2013).
16. Ozone-Exposure and Annealing Effects on Graphene-on-SiO2 Transistors-E. Zhang, A.K.M. Newaz et al., Appl. Phys. Lett. 101, 121601 (2012).
15. Surface reactions and defect formation in irradiated graphene devices, Y. S. Puzyrev, Bin Wang, E. X. Zhang, C. X. Zhang, A. K. M. Newaz et al., IEEE Trans. Nuclear Science, 59, (2012).
14. Low-energy X-ray and Ozone-Exposure Induced Defect Formation in Graphene Materials and Devices- E. Zhang, A.K.M. Newaz, et al., IEEE Trans. Nuclear. Sci, 58, 6, (2011).
13. A nano-scale Ti/GaAs metal-semiconductor hybrid sensor for room temperature light detection A.K.M. Newaz, Woo-Jin Chang, Kirk Wallace, Lauren Edge, Samuel Wickline, Rashid Bashir, Adam Gilbertson, L. F. Cohen, and Stuart A. Solin, Appl. Phys. Lett. 97, 082105, (2010).
12. Fluidic measurement of electric field sensitivity of Ti-GaAs Schottky junction gated field effect biosensors Woo-Jin Chang, Ho-Jun Suk, A. K. M. Newaz, Kirk D. Wallace, Samuel A. Wickline, Stuart A. Solin and Rashid Bashir, Biomedical Microdevices, 12, Number 5, 849, (2010).
11. Dimensional crossover and weak localization in a 90 nm n-GaAs thin film A. M. Gilbertson, A. K. M. Newaz, Woo-Jin Chang, R. Bashir, S. A. Solin, and L. F. Cohen, Appl. Phys. Lett. 95, 012113 (2009).
10. Transport measurements and analytical modeling of extraordinary electrical conductance in Ti-GaAs metal- semiconductor hybrid structures A.K.M. Newaz, Y. Wang, J. Wu, S.A. Solin, V.R. Kavasseri, I.S. Ahmad, I. Adesida, Phys. Rev. B, 79, 195308 (2009).
9. Extraordinary electroconductance in metal-semiconductor hybrid structures Yun Wang, A. K. M. Newaz, Jian Wu, S. A. Solin, V. R. Kavasseri, N. Jin, I. S. Ahmed, and I. Adesida, Appl. Phys. Lett. 92, 262106 (2008).
8. Shot Noise characteristics of Triple Barrier Resonant Tunneling Diodes A.K.M. Newaz, W. Song, E.E. Mendez, Y. Lin and J. Nitta, Phys. Rev. B. 71, 195303 (2005).
7. Drastic Reduction of Shot Noise in semiconductor Superlattice W.Song, A.K.M. Newaz, J.K.Son and E.E. Mendez- Phys. Rev. Lett. 96, 126803 (2006).
6. Inverse-Extraordinary Optoconductance in Ti/Au/GaAs Hybrid Structures A.K.M. Newaz, W.-J. Chang, K.D. Wallace, S.A. Wickline, R. Bashir, A.M. Gilbertson, L.F. Cohen, L.C. Edge, and S.A. Solin, AIP Conf. Proc. 1399, 973 (2011).
5. Geometry Driven Extraordinary Electroconductance (EEC) in Ti-GaAs Metal-Semiconductor Hybrid Structures Yun Wang, A.K.M Newaz, S.A. Solin, AIP Conf. Proc. 1199, 517,(2010).
4. Non-Poissonian shot noise in Tunneling semiconductor heterostructures E.E. Mendez, A.K.M. Newaz, W. Song,- Noise and Fluctuations, Volume: 922 Pages: 177-179 (2007).
3. Can Shot-Noise Measurements Distinguish Between Coherent and Sequential Tunneling? E. E. Mendez, A. K. M. Newaz, W. Song, B. Nielsen, R. Hey, H. Kostial, and H. T. Grahn AIP Conf. Proc. 893, 533 (2007).
2. Shot noise experiments in multi-barrier semiconductor heterostructures E.E. Mendez, W. Song, A.K.M. Newaz, 18th Int. Conf. on Noise and Fluct.-ICNF, Spain, AIP Conf. Proc., V 780, Pages: 431-4 (2005).
1. Unusual tunneling characteristics of double-quantum-well heterostructures Y. Lin, J. Nitta, A.K.M. Newaz, et al., Physics of Semiconductors. 27th International Conference on the Physics of semiconductors. ICPS-27, AIP Conf. Proc. V 772, Pages: 549-50 (2005).