Patents

34. 노진서, 목철균, 조은빈 "초소수성 표면을 가지는 기구를 이용한 세제 농도 측정 장치와 세제 농도 측정 방법", 가천대학교 산학협력단, 10-2475239, 2022. 

33. 노진서, 타 탄 호아이 퀴, "귀금속 나노 위계구조를 가지는 광촉매 복합체와 이의 제조방법", 가천대학교 산학협력단, 10-2243407, 2021. 

32. 노진서, 루안 얀지, "탄성 스폰지 구조를 이용한 신축성 가스센서 및 그 제조 방법", 가천대학교 산학협력단, 10-2054989, 2019. 

31. 노진서, "함침법에 의한 유기 전도체 제조방법 및 그에 따른 유기 전도체", 가천대학교 산학협력단, 10-1949932, 2019. 

30. 노진서, "구리 나노구조의 크기 조절이 가능한 구리 나노선 합성방법", 가천대학교 산학협력단, 10-1884379, 2018. 

29. 노진서, "결정성 비스무스 나노입자 어레이의 제조방법", 가천대학교 산학협력단, 10-1793423, 2017. 

28. 노진서, "ZnO 나노로드 어레이, 및 이의 제조방법", 가천대학교 산학협력단, 10-1738573, 2017.

27. S. H. Park, J. S. Noh, and J. Jeon, "Semiconductor device having a metal gate with a low sheet resistance and method of fabricating metal gate of the same", Samsung Electronics, US 8,115,264, 2012. 

26. Y. S. Kang and J. S. Noh, "Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device", Samsung Electronics, US 7,993,963, 2011. 

25. J. S. Noh, Y. H. Khang, S. M. Lee, and D. S. Suh, "Phase change material for use in a phase change random access memory, the phase change material having uniformly distributed insulating impurities", Samsung Electronics, US 7,956,342, 2011. 

24. S. H. Park, J. S. Noh, J. Jeon, and E. J. Bae, "Method of fabricating Schottky barrier transistor", Samsung Electronics, US 7,902,011, 2011.

23. D. S. Suh, Y. H. Khang, J. S. Noh, V. Leniachine, and M. J. Song, "Phase change memory devices and fabrication methods thereof", Samsung Electronics, US 7,872,908, 2011. 

22. S. M. Lee, J. H. Yim, Y. H. Khang, J. S. Noh, and D. S. Suh, "Phase-change ram and method for fabricating the same", Samsung Electronics, US 7,872,250, 2011. 

21. D. S. Suh, Y. H. Khang, S. M. Lee, and J. S. Noh, "Method of operating and structure of phase change random access memory (PRAM)", Samsung Electronics, US 7,824,953, 2010. 

20. S. H. Park, J. S. Noh, and J. Jeon, "Semiconductor device and method of fabricating metal gate of the same", Samsung Electronics, US 7,800,186, 2010.

19. Y. S. Kang and J. S. Noh, "Phase change layer including indium and method of manufacturing the same and phase change memory device comprising phase change layer including indium and methods of manufacturing and operating the same", Samsung Electronics, US 7,777,213, 2010. 

18. S. M. Lee, Y. H. Khang, J. S. Noh, and D. S. Suh, "Phase change random access memory and method of operating the same", Samsung Electronics, US 7,642,540, 2010.

17. D. S. Suh, E. H. Lee, and J. S. Noh, "Phase-change random access memory and programming method", Samsung Electronics, US 7,626,859, 2009. 

16. J. S. Noh, K. J. Kim, and Y. H. Khang, "Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories", Samsung Electronics, US 7,573,058, 2009.

15. Y. H. Khang, S. M. Lee, J. S. Noh, and W. C. Shin, "Method of fabricating phase change RAM including a fullerene layer", Samsung Electronics, US 7,572,662, 2009.  

14. J. S. Noh, T. W. Kim, H. S. Kim, and E. S. Kim, "Magnetic memory device having uniform switching characteristics and capable of switching with low current and associated methods",Samsung Electronics, US 7,508,041, 2009. 

13. J. S. Noh and T. S. Park, "Phase change memory devices using magnetic resistance effect, methods of operating and methods of fabricating the same", Samsung Electronics, US 7,372,125, 2008. 

12. J. S. Noh, K. J. Kim, and Y. H. Khang, "Phase changing material, phase change random access memory comprising the same and methods of operating the same", Samsung Electronics, KR 10-0763908, 2007. 

11. K. J. Kim, Y. H. Khang, and J. S. Noh, "Phase change RAM comprising resistive element having diode function and methods of manufacturing and operating the same", Samsung Electronics, KR 10-0745761, 2007. 

10. J. S. Noh, K. J. Kim, Y. H. Khang, W. C. Shin, and D. S. Suh, "PRAM comprising doped phase change layer and method of operating the same", Samsung Electronics, KR 10-0738115, 2007. 

9. J. S. Noh and K. J. Kim, "Phase change random access memory and method of manufacturing the same", Samsung Electronics, KR 10-0718156, 2007. 

8. D. S. Suh, Y. H. Khang, J. S. Noh, V. Leniachine, and M. J. Song, "Phase change memory device and fabricating method of the same", Samsung Electronics, KR 10-0707182, 2007. 

7. J. S. Noh, T. W. Kim, H. S. Kim, and E. S. Kim, "Magnetic memory device having uniform switching characteristics and capable of switching with low current and method of operating the same",Samsung Electronics, KR 10-0707170, 2007. 

6. Y. H. Khang, S. M. Lee, J. S. Noh, and W. C. Shin, "Manufacturing method phase-change RAM comprising fullerene layer", Samsung Electronics, KR 10-0695166, 2007.

5. J. S. Noh and T. S. Park, "Phase change memory device using magnetic resistance effect and methods of operating and manufacturing the same", Samsung Electronics, KR 10-0695163, 2007. 

4. S. M. Lee, Y. H. Khang, J. S. Noh, and D. S. Suh, "Phase change random access memory and method of operating the same", Samsung Electronics, KR 10-0695162, 2007. 

3. J. S. Noh, Y. H. Khang, S. M. Lee, and D. S. Suh, "Phase changing material, phase change random access memory comprising the same and methods of manufacturing and operating the same",Samsung Electronics, KR 10-0682969, 2007.

2. S. M. Lee, J. H. Yim, Y. H. Khang, J. S. Noh, and D. S. Suh, "Phase-change RAM and fabrication method of the same", Samsung Electronics, KR 10-0668333, 2007.

1. D. S. Suh, Y. H. Khang, S. M. Lee, and J. S. Noh, "Method of operating phase change random access memory (PRAM)", Samsung Electronics, KR 10-0657944, 2006.