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Scanning Electron Microscope
Scanning Electron Microscope
(SEM, Jeol JSM-7100F)
(SEM, Jeol JSM-7100F)
○ Resolution: 1.2 nm guaranteed at 30 KV, 3.0nm guaranteed at 1 KV
○ Magnification : x10 to x1,000,000
○ Accelerating voltage : 0.5 kV to 30 kV (SEM mode)
○ 0.2 kV to 30 kV (GBL mode)
○ Image mode : SEI, BEI (Compo, Topo. Shadow)
○ EDS attached
X-ray diffractometer
X-ray diffractometer
(XRD, Ultima III)
(XRD, Ultima III)
○ Power: 1.2 kW (40 mA, 30 kV)
○ Tube: Cu Ka (λ= 0.154nm)
○ Stage: 4 circle axis
○ Mode : Normal, GI, In-plane, Pi-scan, XRR, RSM
UV-Vis-NIR sphectrophotometer
UV-Vis-NIR sphectrophotometer
(Simadzu, UV-3600i Plus)
(Simadzu, UV-3600i Plus)
○ Wavelength range : 200 nm ~ 2600 nm
○ Resolution : 0.1 nm
○ Material : Film , Powder , Solution
Contact angle Analyzer
Contact angle Analyzer
(접촉각 측정기, Theta lite TL101)
(접촉각 측정기, Theta lite TL101)
○Measuring range : 0~180 o, 0.01~2000 mN/m
○Accuracy : ± 0.1 o, ± 0.01 mN/m
○Maximum sample size : UNLIMITED x 45 x 200 mm (w. stage)
○Maximum resolution : 1280 x 1024 pixels (Max)
○Maximum measuring speed : 2068 fps
○Camera : CMOS 1/2" USB 3.0 digital camera
○Light source : LED based background lighting, Ø 20 mm
Freeze Dryer
Freeze Dryer
(동결건조기, Hyper-HC3055)
(동결건조기, Hyper-HC3055)
Gas Chromatography
Gas Chromatography
(GC, Young In Chromas, 총 2대)
(GC, Young In Chromas, 총 2대)
○ TCD, FID, PDD
○ H2, O2, CO2, CO, CH4, C2H4, C3H8, etc
BET Analyzer
BET Analyzer
(Micrometritics, ASAP 2020 Plus)
(Micrometritics, ASAP 2020 Plus)
○ Physisorption available
○ Gas : N2(99.999%) for analysis, He(99.999%) for backfill
○ Refrigerant : Liquid nitrogen (-195.85 °C)
○ Max temperature for Degas : 350 °C
○ Gas pressure range : 0 to 950 mmHg
○ 2 degas port and 1 analysis port
○ Specimen type and size : pellets, cores, and powders in size less than 1.25 cm and 8 cc.
Hall measurement system
Hall measurement system
Spin coater
Spin coater
(스핀코터, Laurell WS-650Mz-23NPPB)
(스핀코터, Laurell WS-650Mz-23NPPB)
Ball Miller
Ball Miller
(LK Lab Korea, 2대)
(LK Lab Korea, 2대)
Rapid Thermal Annealing (RTA) system
Rapid Thermal Annealing (RTA) system
○ Gas: N2, O2, vacuum
○ Halogen Lamp
○ Max Temperature: 1100 ℃
○ Ramp rate : 50~120 ℃/sec for Silicon wafer
○ Wafer size & Product yield : 4 inch, 1 wafer/run
○ Temperature accuracy : <3 ℃
○ Steady State Temperature Stability : <1℃
Flame systems
Flame systems
○ Gas: CH4, LPG
○ Mckenna burner, Bunsen burner
Atomic Force Microscopy (원자힘 현미경)
Atomic Force Microscopy (원자힘 현미경)
○ Image : 120 μm XY range and 15μm Z range
○ Operating mode
- Contact mode
-Tapping mode (AC mode)
- Lateral Force Mode (LFM)
- Conductive AFM (CAFM)
- Kelvin Probe Force Microscopy (KPFM)
- Scanning electrochemical microscopy (SCEM)
Tube furnace system
Tube furnace system
○Vapor Transport growth of nanowires
○Two zone
○III-V semiconductor growth, vapor transport growth, heat treatment
○Max temp.: 1200 ℃
furnace system
furnace system
○ Heatment, annealing
○ Max temp.: 950 oC
IPCE system
IPCE system
-Spectral response of PEC and solar cells
○ 200-1050 nm
○ Spectral resolution: 1 nm
fume hood system
fume hood system
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