Miron J. Cristea, PhD
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Semiconductors at high injection levels - high injection level vs. low injection level. The p-n junction characteristics at high injection levels.
Junction terminations for high-voltage capability. Thermal operation of power semiconductor devices
The power Schottky diode. The MOS power transistors. The power static-induction transistor SIT.
Power diodes. Power LEDs. Solar cells. The power bipolar transistors. The thyristors. The IGBT. The CSTBT. The SiC JFET-MOS cascode.
Continut - Contents
The p-n junction characterization at medium-high injection levels.
Depletion region width of practical p-n junctions.
Barrier capacitance of practical p-n junctions.
Breakdown voltage of power semiconductor devices.
Semiconductor p-n junctions. Modern power semiconductor devices.
- Particularities of power semiconductor devices
- Unipolar power devices
- Bipolar and merged power devices
Contact Information
miron.cristea@gmail.com
40-21-402-4915
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