Our research focuses on micro/nanomaterial integrations based on electrical, material, mechanical, and neural engineering. The contributions of the research are “translational nanotechnology” to show the possibilities of a combination of top-down and bottom-up nano/micro materials and their device integrations. Our principal achievements are 1) CMOS/MEMS neural devices, 2) high-performance transistors on Si and their device physics, 3) macroscale flexible electronics for flexible, high-performance, and low-power electronics, 4) human-interactive wearable devices, and 5) brain machine interfaces.
If you would like to admit Osaka Prefecture University and join our group, please submit your application as you can find more detail here "Admission guidelines for international students". Application deadline is June and December for admission in October and April, respectively. Also there are some scholarships for the international students to support tuition and living cost. For more detail, please contact to Prof. Takei.
If you are interested in this group to work together as a postdoctoral fellow, there is a postdoctoral fellowship program for foreigners supported by Japan Society for the Promotion of Science. We also accept talented visiting students/researchers as well. Please email your CV to Prof. Takei.
Selected publications (Full publication list is here)
1. K. Takei et al. “Nanowire Active Matrix Circuitry for Low-Voltage Macro-Scale Artificial Skin”, Nature Materials, Vol. 9, pp. 821-826, 2010.
2. T. Takahashi*, K. Takei*, et al., “Parallelarray InAs nanowire transistors for mechanically bendable, ultra high frequencyelectronics”, ACS Nano, Vol. 4, pp. 5855-5860, 2010. *Authors equally contributed.
3. K. Takei et al. "Highly sensitive electronic whiskers based on patterned carbon nanotube and silver nanoparticle composite films", Proceedings of the National Academy of Sciences (PNAS), Vol. 111, pp. 1703-1707, 2014.
High performance electronics (XOI)
1. H. Ko*, K. Takei*, R. Kapadia*, et al. “Ultrathin compound semiconductor on insulator layers for highperformance nanoscale transistors”, Nature, Vol. 468, pp. 286-289, 2010. *Authors equally contributed.
2. K. Takei*, H. Fang*, S.B. Kumar* et al. “Quantum confinement effects in nanoscale-thickness InAs membranes”, Nano Letters, Vol. 11, pp.5008-5012, 2011. *Authors equally contributed.
3. K. Takei et al. “Benchmarking the performance ofultrathin body InAs-on-insulator transistors as a function of body thickness”, Applied Physics Letters,Vol. 99 , p.103507, 2011.
4. K. Takei et al. “Nanoscale InGaSb heterostructure membranes on Si substratesfor high hole mobility transistors”, Nano Letters, Vol. 12, pp. 2060-2066, 2012.
5. K. Takei et al. "High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics", Applied Physics Letters, in press.
1. K. Takei et al., “Microtube-based electrode arrays for low invasive extracellular recording with a high signal-to-noise ratio”, Biomedical Microdevices, Vol. 12, pp. 41-48, 2010.
2. K. Takei et al., “Out-of-plane microtubearrays for drug delivery – Liquid flow properties and an application to thenerve block test”, Biomedical Microdevices, Vol. 11, pp. 539-545, 2009.
1. K. Takei et al., “Integration of out-of-plane silicon dioxide microtubes, silicon microprobes, and on-chip NMOSFETs by selective vapor-liquid-solid growth”, Journal of Micromechanics and Microengineering, Vol. 18, p. 035033, 2008.
2. K. Takei et al., “Out-of-plane tube arrays for biomedical sensors using vapor-liquid-solid growth method”, IEEE Sensors, Journal, Vol. 5, pp. 470-475, 2008.