Papers
119. S. Lee, Y. Cho, S. Heo, J. H. Bae, I. M. Kang, K. Kim, W. Y. Lee*, J. Jang*
“UV/Ozone Treated and Sol-gel Processed Y2O3 Insulators Prepared Using Gelation-Delaying Precursors"
Nanomaterials (IF=5.4) 2024, 14, 791.
118. Y. Cho, S. Lee, S. Heo, J. H. Bae, I. M. Kang, K. Kim, W. Y. Lee*, J. Jang*
“Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random Access Memory"
Nanomaterials (IF=5.4) 2024, 14, 532.
117. W. Y. Lee, J. Lee, H. J. Kwon, K. Kim, H. Kang*, J. Jang*
“High-detectivity silver telluride nanoparticle-based near-infrared photodetectors functionalized with surface-plasmonic gold nanoparticles"
Applied Surface Science (IF=6.7) 2024, 654, 159563. JCR=2.4%, Materials Science, Coating & Films Category Rank 1.
116. B. Jang, J. Kim, J. Lee, J. Jang, H. J. Kwon*
“Stable switching behavior of low-temperature ZrO2 RRAM devices realized by combustion synthesis-assisted photopatterning"
Journal of Materials Science & Technology (IF=10.9) 2024, 189, 68. JCR=1.9%, Metallurgy & Metallurgical Engineering.
115. U. Jung, M. Kim, J. Jang, J. H. Bae, I. M. Kang, S. H. Lee*
Advanced Sciences (IF=15.1) 2023, 2307494. JCR=5.94%, Materials Science, Multidisciplinary.
114. D. Lee, J. Lee, M. Shin, D. Kim, J. Lee, M. Bissannagari, W. Hong, J. E. Jang, J. Jang*, H. Kang*
“Sol-gel processed Y2O3 embedded capacitor based physically unclonable function"
Materials Science in Semiconductor Processing (IF=4.1) 2023, 168, 107806.
113. H. I. Kim, T. Lee, Y. Cho, S. Lee, W. Y. Lee, K. Kim, J. Jang*
“Sol-gel Processed Y2O3-Al2O3 Mixed Oxide-based Resistive Random Access Memory Devices"
Nanomaterials (IF=5.3) 2023, 13, 2462.
112. T. Lee, H. I. Kim, Y. Cho, S. Lee, W. Y. Lee, J. H. Bae, I. M. Kang, K. Kim, S. H. Lee*, J. Jang*
“Sol-gel Processed Y2O3 Multilevel Resistive Random-access Memory Cells for Neural Networks"
Nanomaterials (IF=5.3) 2023, 13, 2432. Selected as Editor's Choice.
111. W. Park, J. H. Park, J. S. Eun, J. Lee, J. H. Na, S. H. Lee, J. Jang, I. M. Kang, D. K. Kim*, J. H. Bae*
Nanomaterials (IF=5.3) 2023, 13, 2231.
110. J. Park, S. H. Lee, G. E. Kang, J. H. Heo, S. R. Jeon, M. S. Kim, S. J. Bae, J. W. Hong, J. Jang, J. H. Bae, S. H. Lee, I. M. Kang*
“Simulation of Capacitorless DRAM Based on the Polycrystalline Silicon Nanotube Structure with Multiple Grain Boundaries"
Nanomaterials (IF=5.3) 2023, 13, 2026.
109. J. Lee, J. I. Park, S. H. Lee, J. Jang, I. M. Kang, J. Park, X. Zhang, D. K. Kim*, J. H. Bae*
Biomacromolecules (IF=6.2) 2023, 24, 3775. JCR=4.8%, Chemistray, Organic.
108. J. Feng, S. H. Jeon, J. Park, S. H. Lee, J. Jang, I. M. Kang, D. K. Kim*, and J. H. Bae*
“Improvement in Switching Characteristics and Bias Stability of Solution Processed Zinc-Tin Oxide Thin Film Transistors vis Simple Low Pressure Thermal Annealing Treatment"
Nanomaterials (IF=5.719) 2023, 11, 1722.
107. T. Lee, K. Kim, H. I. Kim, W. Y. Lee, J. H. Bae, I. M. Kang, S. H. Lee, K. Kim and J. Jang*
“Improved Negative Bias Stability of a Sol-gel Processed SnO2 Thin Flim Transistors with Vertically Controlled Carrier Concentration"
ACS Applied Electronic Materials (IF=4.494) 2023, 5, 2670.
106. H. Kim, M. Kim, A. Lee, H. L. Park, J. Jang, J. H. Bae, I. M. Kang, E. S. Kim*, S. H. Lee*
“Organic Memristor based Flexible Neural Networks with Bio-realistic Synaptic Plasticity for Complex Combinatorial Optimization"
Advanced Science (IF=17.521) 2023, 2300659. JCR=5.94%, Materials Science, Multidisciplinary.
105. K. Kim, H. I. Kim, T. Kim, W. Y. Lee, J. H. Bae, I. M. Kang, S. H. Lee, K. Kim, and J. Jang*
“Thickness Dependent of Resistive Switching Characteristics of the Sol-gel Processed Y2O3 RRAM Devices"
Semiconductor Science and Technology (IF=1.94) 2023, 38, 045002.
104. B. Jang, J. Lee, H. Kang, J. Jang and H. Kwon*
“Schottky Barrier Modulation of Bottom Contact SnO2 Thin Film Transistors via Chloride-based Combustion Synthesis"
Journal of Material Science & Technology (IF=11.7) 2023, 148, 199. JCR=1.9%, Metallurgy & Metallurgical Engineering.
104. K. Kim, H. I. Kim, T. Kim, W. Y. Lee, J. H. Bae, I. M. Kang, S. H. Lee, K. Kim, and J. Jang*
“Improved Tunneling Property of p+ Si Nanomembrane/n+ GaAs Heterostructures through Ultraviolet/Ozone Interfaces"
Semiconductor Science and Technology (IF=1.94) 2023, 38, 045002.
103. K. Kim†,* and J. Jang†,*, †These authors contributed equally to this work.
“Improvement Tunneling Properties of p+ Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment"
Inorganics (IF=2.86) 2022, 10, 228.
102. M. W. Park, D. Y. Kim, U. An, J. Jang, J. H. Bae, I. M. Kang, S. H. Lee*
“Organizing Reliable Polymer Electrode Lines in Flexible Neural Networks via Coffee Ring-free Micromolding in Capillaries."
ACS Applied Materials & Interfaces (IF=10.383) 2022, 14, 46819. JCR=11.47%, Materials Science, Multidisciplinary.
101. Z. Wang, S. H. Jeon, Y. J. Hwang, S. H. Lee, J. Jang, I. M. Kang, and J. H. Bae*
“Physico-chemical Origins of Electrical Characteristics and Instability in Solution Processed ZnSnO Thin Film Transistors"
Coatings (IF=3.12) 2022, 12, 1534.
100. H. D. An, S. H. Lee, J. Park, S. R. Min, G. U. Kim, Y. J. Yoon, J. H. Seo, M. S. Cho, J. Jang, J. H. Bae, S. H. Lee, and I. M. Kang*
“Design of a Capacitor-less DRAM based on a Polycrystalline Silicon Dual Gate MOSFET with a Fin Shaped Structure"
Electronics (IF=2.690) 2022, 11, 3365.
99. H. I. Kim, T. Lee, W. Y. Lee, K. Kim, J. H. Bae, I. M. Kang, S. H. Lee, K. Kim, and J. Jang*
“Improved Environment Stability of Y2O3 RRAM Devices with Au Passivated Ag Top Electrodes."
Materials (IF=3.623) 2022, 15, 6859.
98.G. U. Kim, Y. J. Yoon, J. H. Seo, S. H. Lee, J. Park, G. E. Kim, J. H. Heo, J. Jang, J. H. Bae, S. H. Lee, and I. M. Kang*
“Design of a Capacitorless DRAM based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon."
Materials (IF=3.623) 2022, 15, 6859.
97. S. R. Min, S. H. Lee, J. Park, G. U. Kim, G. E. Kang, J. H. Heo, Y. J. Yoon, J. H. Seo, J. Jang, J. H. Bae, S. H. Lee, and I. M. Kang*
“Simulation of CMOS Logic Inverter based on Vertically Stacked Polyscrystalline Si Nanosheet Gate-all-around MOSFET and Its Electrical Characteristics."
Current Applied Physics (IF=2.48) 2022, 43, 106.
96. H. D. An, S. H. Lee, J. Park, S. R. Min, G. U. Kim, Y. J. Yoon, J. H. Seo, M. S. Cho, J. Jang, J. H. Bae, S. H. Lee and I. M. Kang&
“Analysis and Optimization for Characteristics of Vertical GaN Junctionless MOSFETs Depending on Depcifications of GaN Substrates"
Journal of Electrical Engineering & Technology (IF=1.528) 2022, 17, 3487.
95. Y. J. Hwang†, D. K. Kim†, S. H. Jeon, Z. Wang, J. Park, S. H. Lee, J. Jang, I. M. Kang and J. H. Bae*, †These authors contributed equally to this work.
“Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution Processed ZnSnO Thin Film Transistor."
Nanomaterials (IF=5.719) 2022, 12, 3097.
94. S. H. Lee, J. Park, S. R. Min, G. U. Kim, J. Jang, J. H. Bae, S. H. Lee and I. M. Kang*
“3-D Stacked Polycrystalline-silicon-MOSFET Based Capacitor-less DRAM with Superior Immunity to Grain Boundary's Influence"
Scientific Reports (IF=4.996) 2022, 12, 14455.
93. S. E. Kim, M. Kim, J. Jang, H. Kim, S. Kim, J. Jang, J. H. Bae, I. M. Kang, and S. H. Lee*
“Systematic Engineering of Metal Ion Injection in Memristors for Complex Neuromorphic Computing with High Energy Efficiency"
Advanced Intelligent Systems (IF=7.298) 2022, 2200110. JCR=13.08%, Automation & Control Systems.
92. B. Jang†, J. Jang†, J. E. Jang and H. J. Kwon*, †These authors contributed equally to this work.
“Combustion Assisted Low Temperature Solution Process for High Performance SnO2 Thin Film Transistors"
Ceramics International (IF=5.532) 2022, 48, 20591. JCR=8.62%, Material Science, Ceramics.
91. H. D. An, S. H. Lee, J. Park, S. R. Min, G. U. Kim, Y. J. Yoon, J. H. Seo, M. S. Cho, J. Jang, J. H. Bae, S. H. Lee and I. M. Kang*
“Analytic and Optimization for Characteristics of Vertical GaN Junction-less MOSFETs Depending on Specfications of GaN Substrates"
Journal of Electrical Engineering & Technology (IF=1.069) 2022, 7, 10262.
90. H. D. An, S. R. Min, S. H. Lee, J. Park, G. U. Kim, Y. J. Yoon, J. H. Seo, M. S. Cho, J. Jang, J. H. Bae, S. H. Lee and I. M. Kang*
“Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFET with Si3N4/TiO2 Stacked Dual Gate Dielectric"
Journal of Semiconductor Technology and Science (IF=0.474) 2022, 22, 105.
89. W. Y. Lee, K. Kim, S. H. Lee, J. H. Bae, I. M. Kang M. Park, K. Kim and J. Jang*
“Room-temperature High Detectivity Flexible Near-infrared Photodetectors Consisting of Chalcogenide Silver Telluride Nanoparticles"
ACS Omega (IF=3.512) 2022, 7, 10262.
88. D. K. Kim, K. H Seo, D H Kwon, S. H. Jeon, Y. Hwang, Z. Wang, J. Park, S. H. Lee, J. Jang, I. M. Kang, X. Zhang, and J. H. Bae*
“Viable Strategy to Minimize Trap States of Patterned Oxide Thin Film Films for Both Exceptional Electrical Performance and Uniformity in Sol-gel Processed Transistors"
Chemical Engineering Journal (IF=13.273) 2022, 441, 135833. JCR=2.45%, Engineering, Chemical.
87. D. W. Kim, H. J. Kim, W. Y. Lee, K. Kim, S. H. Lee, J. H. Bae, I. M. Kang K. Kim and J. Jang*
“Enhanced Switching Reliability of Sol-gel Processed Y2O3 RRAM Device by Y2O3 Surface Roughness Induced Local Electrical Field"
Materials (IF=3.623) 2022, 15, 1943.
86. H. J. Kim, D. W. Kim, W. Y. Lee, K. Kim, S. H. Lee, J. H. Bae, I. M. Kang, K. Kim and J. Jang*
“Flexible Sol-Gel Processed Y2O3 RRAM Devices Obtained via Thermal Energy Free UV/Ozone Photochemical Annealing Process"
Materials (IF=3.623) 2022, 15, 1899.
85. W. Y. Lee, D. W. Kim, H. J. Kim, K. Kim, S. H. Lee, J. H. Bae, I. M. Kang K. Kim and J. Jang*
“Environmentally, and Electrically Stable Sol-gel deposited SnO2 Thin Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth that Minimizes Mobility Degradation"
ACS Applied Materials & Interfaces (IF=9.229) 2022, 14, 10558-10565, JCR=13.2%, Materials Science, Multidisciplinary.
84. S. R. Min, M. S. Cho, S. H. Lee, J. Park, H. D. An, G. U. Kim, Y. J. Yoon, J. H. Seo, J. Jang, J. H. Bae, S. H. Lee, and I. M. Kang*
“Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator"
Materials (IF=3.623) 2022, 15, 819.
83. J. Lee, W. Hong, D. Kim, Y. Hwang, J. Jang, and H. Kang*
“Semi-transparent, micrometer resolution p-NO/n-ZnO hetero-junction diode sensors with ultra thin metal anode"
Advanced Materials Technologies (IF=7.848), 2022, 2, 2100923.
82. J. Park, M. S. Cho, S. H. Lee, H. D. Ahn, S. R. Min, G. U. Kim, Y. J. Yoon, J. H. Seo, S. H. Lee, J. Jang, J. H. Bae, and I. M. Kang*
“Design of Capaciterless DRAM based on Polycrystalline Silicon Nanotube Structure"
IEEE Access (IF=3.745) 2021, 9, 163675.
81. M. H. Kim, H. L. Park, M. H. Kim, J. Jang, J. H. Bae, I. M. Kang, and S. H. Lee*
“Fluoropolymer-based organic memrister with multifunctionality for flexible neural network system"
NPJ Flexible Electronics (IF=12.740) 2021, 5, 34, JCR=0.92%, Engineering, Electrical & Electronic.
80. K. Kim† , C. Lee† , W. Y. Lee, D. W. Kim, H. J. Kim, S. H. Lee, J. H. Bae, I. M. Kang and J. Jang*, †These authors contributed equally to this work.
“Enhanced Switching Ratio of Sol-gel Processed Y2O3 RRAM Device by Suppressing Oxygen Vacancy Formation at High Annealing Temperature"
Semiconductor Science and Technology (IF=2.352), 2021, 37, 015007.
79. K. Kim, W. Hong, C. Lee, W. Y. Lee, D. W. Kim, H. J. Kim, H. Kang* and J. Jang*
“Sol-gel Processed Amorphous Phase ZrO2 based Resistive Random Access Memory"
Materials Research Express (IF=1.620), 2021, 8, 116301.
78. J. H. Kwon, H. Lee, B. Kim, X. Zhang, J. Jang, J. H. Bae* and J. H. Park*
“Urbach Energy Dictated Spatial Propagation of Electrons in Thermodynamically Tuned Amorphous Zirconia Thin Films"
Advanced Materials Interfaces (IF=6.147), 2021, 2101104.
77. H. J. Kim, D. W. Kim, W. Y. Lee, S. H. Lee, J. H. Bae, I. M. Kang and J. Jang*
“Improved Negative Bias Stability of Sol-gel Processed Li doped SnO2 Thin Film Transistors"
Electronics (IF=2.412), 2021, 10, 1629.
76. H. Kim, J. Jang and K. Kim*
“Negative Differential Resistance in Si/GaAs Tunnel Junction Formed by Single Crystalline Nanomembrane Transfer Method"
Results in Physics (IF=4.019), 2021, 25, 104279.
75. C. Lee, W. Y. Lee, D. W. Kim, H. J. Kim, J. H. Bae, I. M. Kang, D. Lim, K. Kim and J. Jang*
“Extremely Bias Stress Stable Enhancement Mode Sol-gel Processed SnO2 Thin Film Transistors with Y2O3 Passivation Layers"
Applied Surface Science (IF=6.182) 2021, 559, 149971., JCR=2.5%, Materials Science, Coating & Films Category Rank 1.
74. S. H. Lee, W. D. Jang, Y. J. Yoon, J. H. Seo, H. J. Mun, M. S. Cho, J. Jang, J. H. Bae, and I. M. Kang*
“Polycrystalline-Silicon-MOSFET-based Capacitorless DRAM with Grain Bouondaries and Its Performances"
IEEE Access (IF=3.745) 2021, 9, 50281
73. K. H. Seo, J. Jang, I. M. Kang, and J. H. Bae*
“Improving of Sensitivity of PbS Quantum Dot based SWIR Photodetector Using P3HT"
Materials (IF=3.057), 2021, 14, 1488.
72. D. W. Kim†, H. J. Kim†, C. Lee, K. Kim, J. H. Bae, I. M. Kang and J. Jang*, †These authors contributed equally to this work.
“Influence of Active Channel Layer Thickness on SnO2 Thin Film Transistor Performance"
Electronics (IF=2.412), 2021, 10, 200.
71. M. S. Cho, H. J. Moon, S. H. Lee, H. D. An, J. Jang, J. H. Bae, I. M. Kang*
“The Effect of Grain Boundary on Electrical Characteristics in the Source and Drain Regions of Poly-crystalline Silicon Based in One Transistor Dynamic Random Access Memory"
Journal of Nanoscience and Nanotechnology (IF=1.134), 2021, 21, 4258-4267.
70. S. H. Lee, M. S. Cho, J. H. Jung, W. D. Jang, H. J. Moon, J. Jang, J. H. Bae and I. M. Kang*
“Design of a Capacitorless Dynamic Random Access Memory Based on Ultra Thin Polycrystaline Silicon Junctionless Field Effect Transistor with Dual Gate"
Journal of Nanoscience and Nanotechnology (IF=1.134), 2021, 21, 4223-4229.
69. M. S. Cho, H. J. Moon, S. H. Lee, H. D. An, J. Jang, J. H. Bae, I. M. Kang*
“Design and Analysis of DC/DC Boost Converter Using Vertical GaN Power Device"
Journal of Nanoscience and Nanotechnology (IF=1.134), 2021, 21, 4320-4324.
68. S. H. Lee, M. S. Cho, H. J. Moon, J. Park, H. D. An, J. Jang, J. H. Bae, I. M. Kang*
“Design of a Capacitorless Dynamic Random Access Memory Based on Junctionless Dual-Gate Field Effect Transistor with a Silicon Germanium/Silicon Nanotube"
Journal of Nanoscience and Nanotechnology (IF=1.134), 2021, 21, 4235-4242.
67. D. K. Kim, J. Park, P. Vincent, J. I. Park, J. Jang, I. M. Kang and J. H. Bae*
“Numerical Design of Carrier Transporting Layer in Top Gate InGaZnO Thin Film Transistors for Controlling Potential Energy"
Journal of Nanoscience and Nanotechnology (IF=1.134), 2021, 21, 3487-3852.
66. M. S. Cho, H. J. Moon, S. H. Lee, J. Jang, J. H. Bae and I. M. Kang*
“Simulation of Capacitorless Dynamic RAM based on Junctionless FinFET Using Grain Boundary of Polycrystalline Silicon"
Applied Physics A (IF=1.810), 2020, 126, 943.
65. W. Y. Lee, S. Ha, H. Lee, C. Lee, J. H. Bae, I. M. Kang, and J. Jang*
“Improved Negative Bias Stability of Sol-gel Processed Ti Doped SnO2 Thin Film Transistors"
Semiconductor Science and Technology (IF=2.361), 2020, 35, 115023
64. C. Lee and J. Jang* (Domestic Paper)
"Optoelectronic Properties of Sol-gel Processed SnO2 Thin Film Transistors"
Journal of Sensors Science and Technology, 2020, 29, 328-331.
63. J. I. Park, D. K. Kim, J. Jang, I. M. Kang, H. Kim, J. Park, I. W. Nam, P. Lang and J. H. Bae*
"Control of Silver Nanowire Elastomner Nanocomposite Network through Elaborate Direct Printing for Ultrathin and Stretchable Strain Sensors"
Composites Science and Technology (IF=7.098) 2020, 10, 108471., JCR=5.7%, Materials Science, Composites.
62. S. Baik, D. J. Kwon, H. Kang, J. E. Jang, J. Jang, Y. S. Kim H. J. Kwon*
“Conformal and Ultra Shallow Junction Formation Achieved Using a Pulse Laser Annealing Process Integrated with a Modified Plasma Assisted Doping Process"
IEEE Access (IF=3.745) 2020, 8, 172166
61. D. K. Kim, J. I. Park, J. Jang, I. M. Kang, J. Park and J. H. Bae*
“Expeditious and Eco-friendly Solution-free Self-patterned of Sol-gel Oxide Semiconductor Thin Films"
Materials and Design (IF=6.210) 2020, 194, 108949.
60. B. Jang, H. Kang, W. Lee, S. H. Ha, H. Lee, J. H. Bae, I. M. Kang, H. Kwon*, and J. Jang*
“Enhancement Mode Flexible SnO2 Thin Film Transistors by an UV/Ozone Assisted Sol-Gel Approach"
IEEE Access (IF=3.745) 2020, 8, 123013.
59. K. Kim* and J. Jang*
“Polarization Charge Inversion at Al2O3/GaN Interfaces through Post Deposition Annealing"
Electronics (IF=2.412) 2020, 9, 1068.
58. H. J. Mun, M. S. Cho, J. H. Jung, W. D. Jang, S. H. Lee, J. Jang, J. H. Bae, and I. M. Kang*
“Analysis of Logic Inverter Based on Polycrystalline Silicon with Single Grain Boundary"
Journal of Nanoscience and Nanotechnology (IF=1.134) 2020, 20 , 6616.
58. W. D. Jang, Y. J. Yoon, M. S. Cho, J. H. Jung, S. H. Lee, J. Jang, J. H. Bae, and I. M. Kang*
“Design and Anlysis of Metal Oxide Semiconductor Field Effect Transistor Based Capacitorless One Transistor Embedded Dynamic Random Access Memory with Double Polysilicon Layer Using Grain Boundary for Hole Storage"
Journal of Nanoscience and Nanotechnology (IF=1.134) 2020, 20 , 6596.
57. S. H. Lee, M. S. Cho, J. H. Jung, W. D. Jang, H. J. Mun, J. Jang, J. H. Bae, and I. M. Kang*
“Analysis of CMOS Logic Inverter Based on Gate-All-Around Field Effect Transistors with the Strained-Silicon Layer for Improving the Switching Performances"
Journal of Nanoscience and Nanotechnology (IF=1.134) 2020, 20 , 6632.
56. J. I. Park, H. S. Jeong, P. Vincent, J. Park, D. K. Kim, J. Jang, I. M. Kang, H. Kim, Y. H. Kim, P. Lang, and J. H. Bae*.
“Effect of High Speed Blade Coating on Electrical Characteristics in Polymer Based Transistors"
Journal of Nanoscience and Nanotechnology (IF=1.093) 2020, 20, 5486.
55. P. Vincent, G. C. Sergio, J. Jang, I. M. Kang, J. Park, H. Kim, M. Lee, and J. H. Bae*.
“Application of Genetic Algorithm for More Efficient Multi Layer Thickness Optimization in Solar Cells"
Energies (IF=2.676) 2020, 13, 2726.
54. J. I. Park, D. K. Kim, H. Lee, J. Jang, J. Park, H. Kim, P. Lang, I. M. Kang and J. H. Bae*
“High-performance of solution processed SnO2 Thin Film Transistors by Promoting of Photo-exposure Time Dependent Carrier Transport during the Pre-annealing State"
Semiconductor Science and Technology (IF=2.654) 2020, 35(6), 065019.
53. J. H. Jung, M. S. Cho, W. D. Jang, S. H. Lee, J. Jang, J. H. Bae, Y. J. Jung, and I. M. Kang*
“Fabrication of AlGaN/GaN MISHEMT with dual metal gate electrode and its application"
Applied Physics A (IF=1.784) 2020, 126, 274.
52. W. Y. Lee, S. Ha, H. Lee, J. H. Bae, I. M. Kang, K. Kim, and J. Jang*
“Effect of Mg Doping on the Electrical Performance of a Sol-gel Processed SnO2 Thin Film Transistors"
Electronics (IF=2.11) 2020, 9, 523.
51. J. H. Jung, M. S. Cho, W. D. Jang, S. H. Lee, J. Jang, J. H. Bae, and I. M. Kang*
“Recessed Gate GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Using a Dual Gate Insulator Employing TiO2/SiN"
Journal of Nanoscience and Nanotechnology (IF=1.093) 2020, 20, 4678.
50. P. Vincent, J. Jang, I. M. Kang, P. Lang, H. Kim, and J. H. Bae*
“Theoretical Analysis of Prospect of Organic Photovoltaics as a Multifunctional Solar Cell and Laser Power Converter for Wireless Power Transfer"
Journal of Nanoscience and Nanotechnology (IF=1.093) 2020, 20, 4878.
49. C. Lee, W. Y. Lee, H. Lee, S. Ha, J. H. Bae, I. M. Kang, H. Kang, K. Kim, and J. Jang*
“Sol-gel Processed Yttrium Doped SnO2 Thin Film Transistors"
Electronics (IF=2.11) 2020, 9, 254.
48. J. Park, D. Y. Kim, J. I. Park, J. Jang, I. M. Kang, H. Kim, P. Lang, and J. H. Bae*
“Numerical Analysis on Effective Mass and Trap Density Dependence of Electrical Characteristics of a-IGZO Thin Film Transistors"
Electronics (IF=1.764) 2020, 9, 119.
47. W. D. Jang, Y. J. Yoon, M. S. Cho, J. H. Jung, S. H. Lee, J. Jang, J. H. Bae and I. M. Kang*
“Polycrystalline Silicon Metal Oxide Semiconductor Field Effect Transistor based Stacked Multi-layer One Transistor Dynamic Random Access Memory with Double Gate Structure for the Embedded Systems"
Japanese Journal of Applied Physics (IF=1.407) 2020, 59, SGGB01.
46. D. Kim, P. Vincent, J. Jang, I. M. Kang, H. Kim, P. Lang, M. Choi and J. H. Bae*
“Contact Line Curvature-induced Molecular Misorientation of a Surface Energy Patterned Organic Semiconductor in Meniscus-guided coating"
Applied Surface Science (IF=5.155), 2020, 504, 144362. JCR=2.5%, Materials Science, Coating & Films Category Rank 1.
45. J. Y. Kim, P. Vincent, J. Jang, M. S. Jang, M. Choi, J. H. Bae*, C. Lee*, and H. Kim*
“Versatile Use of ZnO Interlayer in Hybrid Solar Cell for Self-powered Near Infra-red Photo-Detecting Application"
Journal of Alloys and Compounds (IF=4.175), 2020, 813, 152202., JCR=7.3%, Metallurgy & Metallurgical.
44. K. Kim*, and J. Jang*
“Improving Ni/GaN Schottky Diode Performance with Interfacial Passivation Layer through UV/Ozone Treatment"
Current Applied Physics (IF=2.010), 2020, 20, 293.
43.W. D. Jang, Y. J. Yoon, M. S. Cho, J. H. Jeong, S. H. Lee, J. Jang, J. H. Bae, and I. M. Kang*
“Design and Optimization of Germanium-based Gate Metal Core Vertical Nanowire Tunnel FET"
Micromachines (IF=2.426), 2019, 10, 749.
42. W. Y. Lee, S. H. Ha, H. Lee, J. H. Bae, B. Jang, H. J. Kwon, Y. Yun, S. Lee and J. Jang*
“High Detectivity Flexible Near Infrared Photodetector Based on Chalcogenide Ag2Se Nanoparticles"
Advanced Optical Materials (IF=7.125), 2019, 7, 1900812. JCR=6.8% , Optics.
41. J. Jeong, J. H. Kwon, K. Lim, S. Biswas, A. Tibaldi, S. Lee, H. J. Oh, J. H. Kim, J. Ko, D. W. Lee, H. Cho, P. Lang, J. Jang, S. Lee, J. H. Bae*, and H. Kim*
“Comparative Study of Triboelectric Nanogenerators with Differently Woven Cottom Textiles for Wearable Electronics"
Polymers (IF=3.164) 2019, 11, 1443.
40. S. Ha, H. Lee, W. Y. Lee, B. Jang W. Kwon, K. Kim and J. Jang*
“Effect of Annealing Environment on the Performance of Sol-gel Processed ZrO2 RRAM"
Electronics (IF=1.764) 2019, 8, 947.
39. H. Lee, S. H. Ha, J. H. Bae, I. M. Kang, K. Kim, W. Y. Lee* and J. Jang*
“Effect of Annealing Ambient on SnO2 Thin Film Transistors via An Ethanol-based Sol-gel Route"
Electronics (IF=1.764) 2019, 8, 955.
38. J. Park, H. Jeong, D. Kim, J. Jang, I. M. Kang, H. Kim*, and J. H. Bae*
“Importance of Blade Coating Temperature for Diketopyrrolopyrrole-based Thin Film Transistors"
Crystals (IF=2.086) 2019, 9, 346.
37. J. Jang (Domestic Paper)
“Synthesis and Optoelectric Characteristics of Ag2Se Nanoparticles for NIR Sensor Application"
Journal of Sensor Science and Technology 2019, 28, 266-269.
36. P. Vincent, J. W. Shim, J. Jang, I. M. Kang, P. Lang, J. H. Bae*, and H. Kim*
“Crucial Role of Quaternary Mixture of Active Layer in Organic Indoor Solar Cell"
Energies (IF=2.676) 2019, 12, 1838.
35. W. Y. Lee, S. H. Ha, H. Lee, J. H. Bae, B. Jang, H. J. Kwon and J. Jang*
“Densification Control as a Method of Improving Air Stability of Thin Film Transistors Based on Sol-Gel Processed SnO2"
IEEE Electron Devices Letters (IF=3.433) 2019, 40, 905-908.
34. H. Kwon, S. Baik, J. E. Jang, J. Jang, S. Kim, C. P. Grigoropoulos, and H. Kwon*
“Ultra-short Pulsed Laser Annealing Effects on MoS2 Transistors with Asymmetry and Symmetry Contacts"
Electronics (IF=2.110) 2019, 8, 222.
33. T. Kim, B. Jang, S. Lee, W. Lee and J. Jang*
“Improvement in Negative Bias Stress Stability of Sol-gel Processed Mg doped In2O3 Thin Film Transistors"
IEEE Electron Devices Letters (IF=3.433) 2018, 39, 1872-1875.
32. B. Jang, T. Kim, S. Lee, W. Lee and J. Jang*
“Schottky Nature of Au/SnO2 Ultrathin Film Diode Prepared by Sol-gel Method"
IEEE Electron Devices Letters (IF=3.433) 2018, 39, 1732-1735.
31. B. Jang, T. Kim, S. Lee, W. Lee, H. Kang, C. S. Cho, and J. Jang*
“High Performance Ultrathin SnO2 Thin Film Transistor by Sol-gel Method"
IEEE Electron Devices Letters (IF=3.433) 2018, 39, 1179-1182.
30. S. Lee, B. Jang, T. Kim, W. Lee and J. Jang* (Domestic Paper)
“UV/O3 Process Time Effect on Electrical Characteristics of Sol-gel Processed CuO Thin Film Transistor"
Journal of Institute of Korean Electrical and Electronics Engineers 2018, 22, 1-5.
29. S. Lee, T. Kim, B. Jang, W. Lee, K. Song, H. Kim, G. Do, S. Hwang, S. Chung, and J. Jang*
“Impact of Device Area and Film Thickness on Performance of Sol-gel Processed ZrO2 RRAM"
IEEE Electron Devices Letters (IF=3.433) 2018, 39, 668-671.
28. S. Lee, W. Lee, B. Jang, T. Kim, J. H. Bae, K. Cho, S. Kim and J. Jang*
“Sol-gel Processed p-type CuO Phototransistor for a Near-Infrared Sensor"
IEEE Electron Devices Letters (IF=3.433) 2018, 39, 47-50. , Front Cover "Editor's Picks Articles"
27. J. Smith, S. Chung, J. Jang, C. Biaou and V. Subramanian
“Solution Processed Complementary Resistive Switching Arrays for Associative Memory"
IEEE Transactions on Electron Devices (IF=2.605) 2017, 64, 4310-4316.
26. T. Kim, B. Jang, J. Bae, H. Park, C. S. Cho, H. Kwon and J. Jang*
“Improvement in the Performance of Sol-gel Processed In2O3 Thin-film Transistor Depending on Sn Dopant Concentration”,
IEEE Electron Devices Letters (IF=3.433) 2017, 38, 1027-1030.
25. J. H. Kwon, D. K. Kim, J. Jang, J. Park, S. W. Kang and J. H. Bae
“Self-alignment of 6,13-bis(triisopropylsilylethynyl)pentacene Molecules Through Magnetic Flux-affected Nanoparticle Motion in Solution-processed Transistors”,
Organic Electronicis (IF=3.679) 2017, 47, 44-50.
24. Y. Yun, A. Choi, S. G. Hahm, J. W. Chung, Y. U. Lee, J. Y. Jung, J. Y. Kim, J. I. Park, S. Lee and J. Jang*
“Enhanced Performance of Thiophene-rich Heteroacene, Dibenzothiopheno [6,5-b:6',5'-f]thieno[3,2-b] Thiophene Thin Film Transistor with MoOx Hole Injection Layers”,
IEEE Electron Device Letters (IF=3.433) 2017, 38, 649-652.
23. J. Jang* and Vivek Subramanian
“Effect of Electrode Material on Resistive Switching Memory Behavior of Solution-processed Resistive Switches: Realization of Robust Multi-level Cells”,
Thin Solid Films (IF=1.761) 2017, 625, 87.
22. J. Jang (Domestic Paper)
“Aging Effects on Electrical Characteristics of Sol-gel Processed CuO Thin Film Transistor”,
Journal of the Korean Institute of Electrical and Electronic Material Engineers 2016, 29, 527.
21. H. Kwon, S. Chung, J. Jang* and C. P. Grigoropoulos (* Corresponding Author)
“Laser Direct Writing and Inkjet Printing for a sub 2 um Channel Length MoS2 Transistor with High Resolution Electrodes”,
Nanotechnology (IF=3.57) 2016, 27, 405301.
20. J. Jang
“Effect of Electrode Material on Characteristics of Non-volatile Resistive Memory Consisting of Ag2S Nanoparticles”,
AIP Advances (IF=1.44) 2016, 6, 075006.
19. H. Kwon, J. Jang* and C. P. Grigoropoulos (* Corresponding Author)
“Laser Direct Writing Process for Making Electrodes and High-k Sol–Gel ZrO2 for Boosting Performances of MoS2 Transistors”,
ACS Applied Materials & Interfaces (IF=7.145) 2016, 8, 9314. JCR=9.9%, Materials Science, Multidisciplinary.
18. J. Jang, S. Chung, H. Kang and V. Subramanian
“P-type CuO and Cu2O Transistors Derived from a Sol–gel Copper (II) Acetate Monohydrate Precursor”,
Thin Solid Films (IF=1.759) 2016, 600, 157.
17. O. Lee, Long You, J. Jang, V. Subramanian, and S. Salahuddin
“Flexible Spin-orbit Torque Devices ”,
Applied Physics Letters (IF=3.302) 2015, 107, 252401.
16. J. Jang, H. Kang, H. C. N. Chakravarthula, and V. Subramanian
“Fully Inkjet-Printed Transparent Oxide Thin Film Transistors Using a Fugitive Wettability Switch”,
Advanced Electronic Materials (IF=4.193) 2015, 1, 7.
15. W. J. Scheideler, J. Jang, M. A. Ul Karim, R. Kitsomboonloha, A. Zeumault, and V. Subramanian
“Gravure-Printed Sol–Gels on Flexible Glass: A Scalable Route to Additively Patterned Transparent Conductors”,
ACS Applied Materials & Interfaces Letters (IF=7.145) 2015, 7, 12679. JCR=9.7%, Materials Science, Multidisciplinary.
14. H.-J. Kwon, S. Kim, J. Jang*,and Costas P. Grigoropoulos(* Corresponding Author)
“Evaluation of Pulsed Laser Annealing for Flexible Multilayer MoS2 Transistors”,
Applied Physics Letters (IF=3.679) 2015, 106, 113111.
13. H.Kang, R.Kitsomboonloha, K. Ulmer, L. Stecker, G. Grau, J. Jang, Vivek Subramanian
“Megahertz-class Printed High Mobility Organic Thin-film Transistors and Inverters on Plastic Using Attoliter-scale High-speed Gravure-printed Sub-5μm Gate Electrodes”,
Organic Electronics (IF=3.679) 2014, 15, 3639.
12. H. J. Kwon, J. Jang*, S. Kim V. Subramanian, and C. P. Grigoropoulos (* Corresponding Author)
“Electrical Characteristics of Multilayer MoS2 Transistors at Real Operating Temperatures with Different Ambient Conditions”,
Applied Physics Letters (IF=3.55) 2014, 105, 152105.
11. H. J. Kwon, H. Kang, J. Jang, S. Kim and C. P. Grigoropoulos
“Analysis of Flicker Noise in Two-dimensional Multilayer MoS2 Transistors”,
Applied Physics Letters (IF=3.55) 2014, 104, 083110.
10. J. Jang, K. Cho, J. Yun, and S. Kim
“Nanocrystal-based Complementary Inverters Constructed on Flexible Plastic Substrates”,
Journal of Nanoscience and Nanotechnology (IF=1.56) 2013, 13, 3597.
9. J. Jang, R. Kitsomboonloha, Sarah L. Swisher, Eung Seok Park, Hongki Kang, and Vivek Subramanian
“Transparent High-performance Thin Film Transistors from Solution-processed SnO2/ZrO2 Gel-like Precursors”,
Advanced Materials (IF=18.9) 2013, 25, 1042. JCR=2.3%, Materials Science, Multidisciplinary.
8. J. Jang, F. Pan, K. Braam, and Vivek Subramanian
“Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag2Se Nanoparticles for Flexible Nonvolatile Memory Applications”,
Advanced Materials (IF=18.9) 2012, 24, 3573. JCR=2.3%, Materials Science, Multidisciplinary.
7. H. Kang, R. Kitsomboonloha, J. Jang, and V. Subramanian
“High-performance Printed Transistors Realized Using Femtoliter Gravure-printed Sub-10μm Metallic Nanoparticle Patterns and Highly Uniform Polymer Dielectric and Semiconductor Layers”,
Advanced Materials (IF=18.9) 2012, 24, 3065. JCR=2.3%, Materials Science, Multidisciplinary.
6. J. Jang, K. Cho, K. Byun W. S. Hong and S. Kim
“Optoelectronic Characteristics of HgSe Nanoparticle Films Spin-Coated on Flexible Plastic Substrates”,
Japanese Journal of Applied Physics (IF=1.06) 2010, 49, 030210.
5. J. Jang, K. Cho, J. Yun, and S. Kim
“N-channel Thin Film Transistors Constructed on Plastic by Solution Processes of HgSe nanocrystals”
Microelectronic Engineering (IF=1.56) 2009, 86, 2030.
4. D. Yeom, J. Kang, M. Lee, J. Jang, J. Yun, D.-Y. Jeong, C. Yoon, J. Koo and S. Kim
“ZnO Nanowire-based Nano-floating Gate Memory with Pt Nanocrystals Embedded in Al2O3 Gate Oxide”
Nanotechnology (IF=3.98) 2008, 19, 395204.
3. D. W. Kim, J. Jang, H. Kim, K. Cho, and S. Kim
“Electrical Characteristics of HgTe Nanocrystal-based Thin Film Transistors Fabricated on Flexible Plastic Substrates”,
Thin Solid Films (IF=1.89) 2008, 516, 7715.
2. J. Jang, K. Cho, and S. Kim
“Transparent and Flexible Thin Film Transistors with Channel Layers Composed of Sintered HgTe Nanocrystals”,
Nanotechnology (IF=3.98) 2008, 19, 015204.
1. J. Jang, K. Cho, and S. Kim
“Synthesis and Electrical Characteristics of Ag2S Nanocrystals”,