My Research, My development, My Crystal Calculator..
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Presently I am working as a Sr. Research Officer in International Center for Materials Science, Jawaharlal Nehru Center for Advanced Scientific Research, Bangalore.
As a amateur programmer, I try to develop codes which help electron and X-ray diffraction research community. Crystal Calculator is one of them.
Research Interests
Experiments with Transmission electron microscopy.
Ion and electron irradiation effects.
In-situ Electron Microscopy study.
Growth and characterization of thin films.
Electron and Ion beam lithography.
Quantum dots, Quantum wires and Quantum walls structures
Calculates d-spacing for any given lattice parameter.
Calculates list of d-spacing for any given lattice parameter.
Calculates list of angles between planes, zone axis.
Calculation and lattice parameter conversion for Rhombohedral and Hexagonal Lattice.
Has inbuild database of more than 100 crystals.
4. Simultaneous growth of nano and sub-micron sized ZnO islands on Si and the surface electrical properties.
Two types of ZnO islands (truncated pyramidal shaped on the Si surface and cone shaped embedded into the Si substrate) with different sizes has been observed on silicon substrate using magnetron sputtering. The nonpolar facets of (11-2x) and (10-11) are found to be more electrically active than the polar facet of (0002) from conductive atomic force microscopy.
J. Ghatak et al. J. Electrochemical Society 158, H5 (2011).
3. Dramatic mass transport into the Si from the Au thin films due to 1.5 MeV Au ion irradiation.
Dramatic mass transport from the Au nanostructures has been observed to extend into the substrate and the maximum depth of mass transport inside Si has been observed to reduce at higher fluence where segregation of Au atoms towards the surface has been observed. At the same fluence, the mass transport is more for higher fllm thickness of Au. The thickness dependent results confirm the absence of confinement effects that arise due to size of the nanostructures.
J. Ghatak et al. Nanotechnology, 19 325602 (2008).
J. Ghatak et al. Journal of Physics: Cond. Matt. 20 485008 (2008).
J. Ghatak et al. Nucl. Instr. Meth. Phys. Res. B, 266 1671 (2008).
2. Flux dependent 1.5 MeV self-ion beam induced sputtering from Gold nanostructured thin films.
The sputtering yield found to increase with the increase of beam flux and a bimodal distribution was observed for the sputtered particle sizes. The increase of sputtering yield with the increase of beam flux was attributed to the increase of temperature of the wafer.
J. Ghatak et al. Journal of Physics D: Appl. Phys. 41 165302 (2008).
J. Ghatak et al. Journal of Nanosci. and Nanotechnol. 8 4318 (2008).
1. Strain at surfaces and interfaces due to ion bombardment.
Strain measurements using selected area diffraction and high resolution TEM show a compressive strain due to MeV ion implantation. Strain is found to be the maximum at the end of range and is relatively weaker at the surface. Onset fluence for complete amorphization decreases with the increase of ion flux.
J. Ghatak et al. Nucl. Instr. Meth. Phys. Res. B, 244, (2006), 64
T. Emoto, J. Ghatak et al.. J. Appl. Phys. 106, 043516 (2009).
Talks Delivered
Annual meeting of EMSI 2012, IISc, Bangalore.
“MRS Fall Meeting”, Boston, USA, 28 Nov – 2 Dec, 2011.
“International workshop on Advanced TEM and TOM III” organized by Royal Microscopy Society at University of Sheffield, UK on 11-12 April, 2011.
“Young Physicist Colloquium” organized by Indian Physics Society at Saha Institute of Nuclear Physics, Kolkata, India on 21-22 August, 2008.
International conference on Surface Modification of Material with Ion Beam, Sept 30 – Oct 5, 2007, Tata Institute of Fundamental Research, Mumbai, India.
AUC meetings on July 8, 2006, Inter University accelerator center, New Delhi, India.
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