Brief Vita

Thesis: Low dimensional effects in Topological Insulators (link)

Publications (7):

[11]. Strain-driven tunable topological states in Bi₂Se₃, H.Aramberri, M.C. Muñoz, J. Phys. Mater. 1 015009 (2018). (Open Access)

[6]. Strain effects in topological insulators: Topological order and the emergence of switchable topological interface states in Sb₂Te₃/Bi₂Te₃ heterojunctions, H.Aramberri and M.C.Muñoz, Phys. Rev. B 95, 205422 (2017). [arXiV:1603.01268]

[5]. A realistic topological p–n junction at the Bi₂Se₃ (0001) surface based on planar twin boundary defects, H.Aramberri, M.C.Muñoz, and J.I.Cerdá, Nano Research 10, 1784 (2017).

[4]. Gap and spin texture engineering of Dirac topological states at the Cr−Bi₂Se₃ interface, H.Aramberri and M.C.Muñoz, Phys. Rev. B 93, 245401 (2016). [arXiV:1602.06829]

[3]. Tunable Dirac Electron and Hole Self-Doping of Topological Insulators Induced by Stacking Defects, H.Aramberri, J.I.Cerdá, M.C.Muñoz, NanoLett. 15 (6), pp 3840–3844 (2015). (Self-archived pdf)

[2]. Ab initio study of the relationship between spontaneous polarization and p-type doping in quasi-freestanding graphene on H-passivated SiC surfaces, J.Sławińska, H.Aramberri, M.C.Muñoz, J.I.Cerdá, Carbon 93, 88-104 (2015). [arXiV:1410.4551]

[1]. Proposal for an ac spin current source, P.P.Hofer, H.Aramberri, C.Schenke, P.A.L.Delplace, Europhys. Lett. 107 (2), 27003 (2014). [arXiV:1403.6674]

Project: Thermal properties of ferroelectric oxides close to structural phase transitions

Publications (5):

[19]. Giant thermal transport tuning at a metal/ferroelectric interface, Y.P. Zang, C. Di, X.J. Yan, D.X. Ji, X.Y. Jiang, H.Y. Fu, J.J. Wang, W. Guo, H.Y. Sun, L. Han, Y.L. Zhou, Z.B. Gu, D. Kong, H. Aramberri, C. Cazorla, J. Íñiguez, R. Rurali, L.Q. Chen, J. Zhou, D. Wu, M.H. Lu, Y.F. Nie , Y.F. Chen & X.Q. Pan, Advanced Materials 34, 2105778 (2021). (Self-archived pdf).

[10]. Electric control of the heat flux through electrophononic effects, J.A.Seijas-Bellido, H.Aramberri, J.Íñiguez, R.Rurali, Phys. Rev. B 97, 184306 (2018). [arXiV:1805.08213]

[9]. Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element, L.López-Mir, C.Frontera, H.Aramberri, K.Bouzehouane, J.Cisneros-Fernández, B.Bozzo, L.Balcells, B.Martínez, Sci. Rep. 8, 861 (2018). (Open Access)

[8]. Thermal conductivity changes across a second-order structural phase transition: the case of high pressure silica, H.Aramberri, R.Rurali, J.Íñiguez, Phys. Rev. B 96, 195201 (2017). [arXiV:1707.05321]

[7]. Thermal conductivity of hexagonal Si and hexagonal Si nanowires from first-principles, M.Raya-Moreno, H.Aramberri, J.A.Seijas-Bellido, X.Cartoixa, R.Rurali, Appl. Phys. Lett. 111, 032107 (2017). (Self-archived pdf)

Project: Electronic properties of topological matter

Publications (4):

[24]. High power density energy harvesting devices based on the anomalous Nernst effect of Co/Pt magnetic multilayers, G. López-Polín, H. Aramberri, J. Marqués-Marchán, B. Weintrub, K. Bolotin, J.I. Cerdá, A. Asenjo, ACS Applied Energy Materials 5, 11835 (2022). [arXiV:2207.07526]

[16]. Noncollinear Magnetic Modulation of Weyl Nodes in Ferrimagnetic Mn₃Ga, C-Y.Huang, H.Aramberri, H.Lin, N.Kioussis, Physical Review B 102, 094403 (2020). [arXiV:2005.08914]

[15]. Novel Family of Topological Semimetals with Butterfly-like Nodal Lines, X.Zhou, C-H. Hsu, H.Aramberri, M.Iraola, C-Y.Huang, J-L.Mañes, M.G. Vergniory, H.Lin, N.Kioussis, Physical Review B 104, 125135 (2021). [arXiV:2005.04360]

[12]. Termination Dependent Topological Surface States in Nodal Loop Semimetal HfP₂, C.Sims, M.M.Hosen, H.Aramberri, C-Y.Huang, G.Dhakal, K.Dimitri, F.Kabir, S.Regmi, X.Zhou, T-R.Chang, H.Lin, D.Kaczorowski, N.Kioussis, M.Neupane, Phys. Rev. Materials 4, 054201 (2020). [arXiV:1906.09642]

Projects:

(1) EXPloring Antiferroelectric oxides as a new technological brick for future Nanoelectronic Devices (EXPAND) (2019-2020).

(2) Theoretical investigation and design of ultra-REactive Functional Oxides (REFOX) (2020-2022).

Publications (9):

[23]. Enhancement of voltage amplification in PbTiO₃/SrTiO₃ superlattices driven by strain-induced phase transition, M. Graf, H. Aramberri, P. Zubko, J. Íñiguez, Nature Materials (2022) https://doi.org/10.1038/s41563-022-01332-z. [arXiV: 2201.07104].

[22]. Ferroelectric/paraelectric superlattices for energy storage, H. Aramberri, N. S. Fedorova, J. Íñiguez, Science Advances 8, eabn4880 (2022). [arXiV:2112.00745].

[21]. On the possibility that PbZrO₃ not be antiferroelectric, H. Aramberri, C. Cazorla, M. Stengel, J. Íñiguez, npj Computational Materials 7, 196 (2021). [arXiV:2107.09685].

[20]. Piezoelectricity in hafnia, S. Dutta, P. Buragohain, S. Glinsek, C. Richter, H. Aramberri, H. Lu, U. Schroeder, E. Defay, A. Gruverman, J. Íñiguez, Nature Communications 12, 7301 (2021).

[18]. Wake-up free ferroelectric rhombohedral phase in epitaxially strained rhombohedral ZrO2 thin films, J.P.B.Silva, R.F.Negrea, M.C.Istrate, S.Dutta, H.Aramberri, J.Íñiguez, F.G.Figueiras, C.Ghica, K.C.Sekhar, A.L.Kholkin, ACS Applied Materials & Interfaces 13, 51383 (2021). [arXiV:2011.02728]

[17]. Antiferroelectricity in a family of pyroxene-like oxides with rich polymorphism, H.Aramberri and J.Íñiguez, Communications Materials 1, 52 (2020). (Open Access). [arXiV:2002.11120] (See also related Behind the Paper contribution in the Device & Materials Engineering community from Nature Research)

[14]. Effect of dopant ordering on the stability of ferroelectric hafnia, S.Dutta, H.Aramberri, T.Schenk, J.Íñiguez, Phys. Status Solidi RRL, 2000047 (2020). [arXiV:2002.02656]

[13]. Archetypal soft-mode driven antipolar transition in francisite Cu₃Bi(SeO₃)₂O₂Cl, C.Milesi-Brault, C.Toulouse, E.Constable, H.Aramberri, V.Simonet, S.de Brion, H.Berger, L.Paolasini, A.Bosak, J.Íñiguez, M.Guennou, Phys. Rev. Lett. 124, 097603 (2020). [arXiV:1907.12069]