• Accepted Papers

• Published Papers (Google scholar: http://scholar.google.com/citations)

       [KAIST: 2016.05~]       

1. Unscreened Polaron Ordering Against High Electron Density on Mechanically Cleaved Surfaces of WO3 (001) Films
   Gyubin Lee, Jeongdae Seo, Wooin Yang, Ji-Ho Mun, Minho Kang, Ho-Hyun Nahm, Yong-Hyun Kim, Tae-Hwan Kim, Chan-Ho Yang, Yeongkwan Kim, Small, e04162 (2025).
2. Detection of the prototype symmetry of ferroelastic WO3 domain walls by angle-resolved polarized Raman spectroscopy
   Jeongdae Seo, Ho-Hyun Nahm', Heung-Sik Park, Shinhee Yun, Jin Hong Lee, Yong-Jin Kim, Yong-Hyun Kim,* and Chan-Ho Yang*, Phys. Rev. B  108, 014103  (2023). 
   [co-1st author*]
3. Metal-anchoring, metal oxidation-resistance, and electron transfer behavior of oxygen vacancy-rich TiO2 in supported noble metal catalyst for room temperature HCHO conversion
   Waleed Ahmad', Hochan Jeong', Ho-Hyun Nahm, Yeunhee Lee, Eunseuk Park, Heehyeon Lee, Ghulam Ali, Yong-Hyun Kim*, Jongsoo Jurng*, Youngtak Oh*, Chemical Engineering Journal 467, 143412 (2023).
4. Critical ionic transport across an oxygen-vacancy ordering transition
   Ji Soo Lim, Ho-Hyun Nahm, Marco Campanini, Jounghee Lee, Yong-Jin Kim, Heung-Sik Park, Jeonghun Suh, Jun Jung, Yongsoo Yang, Tae Yeong Koo, Marta D. Rossell*, Yong-Hyun Kim* & Chan-Ho Yang*, Nat. Commun. 13, 5130 (2022). 
5. Spin crossover of the octahedral Co ion in Co3S4 : Emergence of hidden magnetism
   Inseo Kim, Hyungwoo Lee, Ho-Hyun Nahm, and Minseok Choi*, Phys. Rev. Research 4, 033171 (2022).
6. Nonvolatile High-Speed Switching Zn-O-N Thin-Film Transistors with a Bilayer Structure
   Hyoung-Do Kim, Muhammad Naqi, Seong Cheol Jang, Ji-Min Park, Yun Chang Park, Kyung Park, Ho-Hyun Nahm*, Sunkook Kim*, and Hyun-Suk Kim*, ACS Appl. Mater. Interfaces 14(11), 13490–13498  (2022).
   [co-corresponding author*]
7. Deterministic role of fluorine incorporation in the amorphous Zn–O–N semiconductors: First-principles and experimental studies
   Hyoung-Do Kim,  Jong Heon Kim, Seong Cheol Jang, Ho-Hyun Nahm* & Hyun-Suk Kim*, AIP Adv. 11, 105102 (2021).
   [Co-corresponding author*]
8. First-principles study of antiferromagnetic cobalt spinels
   Inseo Kim, Ho-Hyun Nahm & Minseok Choi*,  Curr. Appl. Phys. 22, 65-70 (2021).
9. Metal-induced n+/n homojunction for ultrahigh electron mobility transistors
   Ji-Min Park, Hyoung-Do Kim, Hongrae Joh, Seong Cheol Jang, Kyung Park, Yun Chang Park, Ho-Hyun Nahm*, Yong-Hyun Kim, Sanghun Jeon* & Hyun-Suk Kim*, NPG Asia Mater. 12, 81 (2020).
   [Co-corresponding author*]
10. Harnessing the topotactic transition in oxide heterostructures for fast and high-efficiency electrochromic applications
    Ji Soo Lim', Jounghee Lee', Byeoung Ju Lee, Yong-Jin Kim, Heung-Sik Park, Jeonghun Suh, Ho-Hyun Nahm, Sang-Woo Kim, Byeong-Gwan Cho, Tae Yeong Koo, Eunjip Choi, Yong-Hyun Kim*, and Chan-Ho Yang*, Science Advances 6 (41), eabb8553 (2020). 
11. Magnetoelastic excitations in multiferroic hexagonal YMnO3 studied by inelastic x-ray scattering
    Kisoo Park', Joosung Oh, Ki Hoon Lee, Jonathan C. Leiner, Hasung Sim, Ho-Hyun Nahm, Taehun Kim, Jaehong Jeong, Daisuke Ishikawa, Alfred Q. R. Baron, and Je-Geun Park*, Phys. Rev. B  102, 085110 (2020). 
12. Diversity of hole-trap centers due to small polarons and bipolarons in Ca-doped BiFeO3: Origin of electrochromism
    Jounghee Lee', Ho-Hyun Nahm*, and Yong-Hyun Kim*, Phys. Rev. B  101, 014110 (2020). 
    [co-corresponding author*]
13. Amorphous Mixture of Two Indium-free BaSnO3 and ZnSnO3 for Thin-Film Transistor with Balanced Performance and Stability  
    Ho-Hyun Nahm'*, Hyoung-Do Kim', Ji-Min Park, Hyun-Suk Kim*, and Yong-Hyun Kim*, ACS Appl. Mater. Interfaces 12 (3), 3719-3726 (2020).
    [co-1st & co-corresponding author*]
14. Anomalous Defect Dependence of Thermal Conductivity in Epitaxial WO3 Thin Films
    Shuai Ning', Samuel C Huberman, Zhiwei Ding, Ho-Hyun Nahm, Yong-Hyun Kim, Hyun‐Suk Kim, Gang Chen, and Caroline A Ross*, Adv. Mater. , 1903738 (2019). 
15. Microscopic States and the Verwey Transition of Magnetite Nanocrystals Investigated by Nuclear Magnetic Resonance
    Sumin Lim', Baeksoon Choi, Sang Young Lee, Soonchil Lee*, Ho-Hyun Nahm, Yong-Hyun Kim, Taehun Kim, Je-Geun Park , Jisoo Lee, Jaeyoung Hong, Soon Gu Kwon, and Taeghwan Hyeon, Nano Lett. 18, 1745−1750 (2018).
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    [SNU & IBS: 2013:05-2016.04]
16. Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface
    Yeong Jae Shin', Lingfei Wang, Yoonkoo Kim, Ho-Hyun Nahm, Daesu Lee, Jeong Rae Kim, Sang Mo Yang, Jong-Gul Yoon, Jin-Seok Chung, Miyoung Kim, Seo Hyoung Chang*, and Tae Won Noh*, ACS Appl. Mater. Interfaces 9, 27305−27312 (2017).
17. The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties
    Jozeph Park', Hyun-Jun Jeong', Hyun-Mo Lee, Ho-Hyun Nahm*, and Jin-Seong Park*, Sci. Rep. 7, 2111 (2017).
    [co-corresponding author*]
18. Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3 Capacitor and its Critical Thickness
    Yeong Jae Shin', Yoonkoo Kim, Sung-Jin Kang, Ho-Hyun Nahm, Pattukkannu Murugavel, Jeong Rae Kim, Myung Rae Cho, Lingfei Wang, Sang Mo Yang, Jong-Gul Yoon, Jin-Seok Chung, Miyoung Kim, Hua Zhou, Seo Hyoung Chang*, and Tae Won Noh*, Adv. Mater. 29, 1602795 (2017).
19. Property database for single-element doping in ZnO obtained by automated first-principles calculations
    Kanghoon Yim', Joohee Lee, Dongheon Lee, Miso Lee, Eunae Cho, Hyo Sug Lee, Ho-Hyun Nahm, and Seungwu Han*, Sci. Rep. 7, 40907 (2017).
20. Spontaneous decays of magneto-elastic excitations in noncollinear antiferromagnet (Y,Lu)MnO3
    Joosung Oh', Manh Duc Le, Ho-Hyun Nahm, Hasung Sim, Jaehong Jeong, T. G. Perring, Hyungje Woo, Kenji Nakajima, Seiko Ohira-Kawamura, Zahra Yamani, Y. Yoshida, H. Eisaki, S.-W. Cheong, A. L. Chernyshev, Je-Geun Park*, Nat. Commun. 7, 13146 (2016).
21. Light-Induced Peroxide Formation in ZnO: Origin of Persistent Photoconductivity
    Youngho Kang', Ho-Hyun Nahm, and Seungwu Han*, Sci. Rep. 6, 35148 (2016).
22. Source of instability at the amorphous interface between InGaZnO4 and SiO2: A theoretical investigation
    Hochul Song', Youngho Kang, Ho-Hyun Nahm*, and Seungwu Han*, Phys. Stat. Sol. (b) 252, 1872–1876 (2015).
    [co-corresponding author*]
23. Hydrogen Bistability as the Origin of Photo-Bias-Thermal Instabilities in Amorphous Oxide Semiconductors
    Youngho Kang', Byung Du Ahn', Ji Hun Song, Yeon Gon Mo, Ho-Hyun Nahm*, Seungwu Han, and Jae Kyeong Jeong*, Adv. Electron. Mater. 1, 1400006 (2015).
    [co-corresponding author*]
24. Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations
    Kanghoon Yim', Youn Yong, Joohee Lee, Kyuhyun Lee, Ho-Hyun Nahm, Jiho Yoo, Chanhee Lee , Cheol Seong Hwang, and Seungwu Han*, NPG Asia Mater. 7, e190 (2015).
25. GW calculations on post-transition-metal oxide
    Youngho Kang', Gijae Kang, Ho-Hyun Nahm, Seong-Ho Cho, Young Soo Park, and Seungwu Han*, Phys. Rev. B 89, 165130 (2014).
26. Intrinsic nature of visible-light absorption in amorphous semiconducting oxides
    Youngho Kang', Hochul Song, Ho-Hyun Nahm, Sang Ho Jeon, Youngmi Cho, and Seungwu Han*, APL Mat. 2, 032108 (2014).
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    [KRISS: 2011:05-2013.04] [NIMS & ISSP: 2010:12-2011.03]
27. Undercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4
    Ho-Hyun Nahm' and Yong-Sung Kim*, NPG Asia Mater. 6, e143 (2014).
28. Hydrogen-induced anomalous Hall effect in Co-doped ZnO 
    Yong Chan Cho', Seunghun Lee, Ji Hun Park, Won Kyoung Kim, Ho-Hyun Nahm, Chul Hong Park, and Se-Young Jeong*, New J. Phys. 16, 073030 (2014).
29. Bistability of Hydrogen in ZnO: Origin of Doping Limit and Persistent Photoconductivity
    Ho-Hyun Nahm', C. H. Park*, and Yong-Sung Kim*, Sci. Rep. 4, 4124 (2014).
30. Positive exchange bias in thin film multilayers produced with nano-oxide layer
    Byong Sun Chun', Ho-Hyun Nahm, Mohamed Abid, Han-Chun Wu, Yong-Sung Kim, In Chang Chu*, and Chanyong Hwang*, Appl. Phys. Lett. 103, 252406 (2013).
31. Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors
    Ji-Young Noh', Hanchul Kim, Ho-Hyun Nahm, Yong-Sung Kim*, Dae Hwan Kim, Byung-Doo Ahn, Jun-Hyung Lim, Gun Hee Kim, Je-Hun Lee, and Junho Song, J. Appl. Phys. 113, 183706 (2013).
32. Role of lone-pair electrons in Sb-doped amorphous InGaZnO4: Suppression of the hole-induced lattice instability
    Ho-Hyun Nahm' and Yong-Sung Kim*, Appl. Phys. Lett. 102, 152101 (2013). [Patent-related paper]
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33. Electronic structures of oxygen-deficient Ta2O5
    Yong Yang', Ho-Hyun Nahm, Osamu Sugino*, and Takahisa Ohno*, AIP Adv. 3, 042101 (2013).

34. Inversion domain boundaries on tin (Sn)-doped ZnO nanobelts: Aberration-corrected scanning transmission electron microscopy study
    Yun Chang Park', Young Heon Kim*, Ho-Hyun Nahm, Ji-Young Noh, Yong-Sung Kim, Joondong Kim, Won Seok Lee, Jun-Mo Yang, and Jeonghee Park, Appl. Phys. Lett. 102, 033103 (2013).
35. Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state
    Ho-Hyun Nahm', Yong-Sung Kim*, and Dae Hwan Kim, Phys. Stat. Sol. (b) 249, 1277 (2012).
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    [PNU: 2009:03-2010.11]
36. Conductive and ferromagnetic contributions of H in ZnCoO using H2 hot isostatic pressure
    Yong Chan Cho', Seunghun Lee, Ho Hyun Nahm, Su Jae Kim, Chul Hong Park, Su Yeon Lee, Sung-Kyu Kim, Chae Ryong Cho, Hideomi Koinuma, and Se-Young Jeong*, Appl. Phys. Lett. 100, 112403 (2012).
37. First-Principles LDA+U Study of Hydrogen Impurities in Anatase TiO2
    H. H. Nahm' and C. H. Park*, J. Korean Phys. Soc. 56, S485-S489 (2010).
38. Reversible ferromagnetic spin ordering governed by hydrogen in Co-doped ZnO semiconductor
    Y. C. Cho, S.-J. Kim, S. Lee, S. J. Kim, C. R. Cho, H. H. Nahm, C. H. Park, I. K. Jeong, S. Park, T. E. Hong, S. Kuroda and S.-Y. Jeong*, Appl. Phys. Lett. 95, 172514 (2009).
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    [Ph.D. course in process]
39. First-principles study of microscopic properties of the Nb antisite in LiNbO3: Comparison to phenomenological polaron theory
    H. H. Nahm'* and C. H. Park*, Phys. Rev. B 78, 184108 (2008).
    [1st & co-corresponding author*] [This work is selected as editors' suggestion.]
40. Magnetism depending on carrier in (Zn,Co)O
    H.-J Lee', H. H. Nam, Y.-C. Cho, S.-K. Kim, C. H. Park, C. R. Cho and S.-Y. Jeong*, Europhys. Lett. 78, 17001 (2007).
41. Critical Lateral Size for Ferroelectricity in Ultrathin PbTiO3 Wall
    H. H. Nahm' and C. H. Park*, J. Korean Phys. Soc. 49, S469-S472 (2006).
42. Microscopic Properties of interstitial hydrogen impurity in TiO2
    D. J. Park', H. H. Nahm, and  C. H. Park*, J. Korean Phys. Soc. 49, S473-S476 (2006).
43. Microscopic study of defects in perovskite oxide
    H. H. Nahm' and C. H. Park*, J. Korean Phys. Soc. 47, S329-S332 (2005).
44. First-principles study of hydrogen impurity in HgO
    M. Choi', H. H. Nahm, and C. H. Park*, J. Korean Phys. Soc. 47, S304-S308 (2005).
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    [M.S. course in process]
45. Microscopic structure of hydrogen impurity in LiNbO3
    H. H. Nahm' and C. H. Park*, Appl. Phys. Lett. 78, 3812-3814 (2001).
    
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• Conference Papers

1. P‐194: Late‐News Poster: Highly Stable Thin‐Film Transistors Based on Amorphous Perovskite Semiconductors
   Hyoung-Do Kim, Ji-Min Park, Ho-Hyun Nahm, Hyun-Suk Kim , SID Symposium Digest of Technical Papers 50 (1), 1337-1340 (2019).
2. 9.4 L: Late-News Paper: Microscopic Mechanism of the Negative Bias and Illumination Stress Instability of Amorphous Oxide TFTs
   Yong-Sung Kim', Ho-Hyun Nahm, and Dae Hwan Kim, SID Symposium Digest of Technical Papers 43, 95-97 (2012).
3. 3.4 L: Late-News Paper: Physical Model and Simulation Platform for High-Level Instability-Aware Design of Amorphous Oxide Semiconductor ThinFilm Transistors
   Dae Hwan Kim', Woojoon Kim, Yongsik Kim, Inseok Hur, Minkyung Bae, Dongsik Kong, Hyun Kwang Jeong, Dong Myong Kim, Byung Ahn, Gun Hee Kim, Je-Hun Lee, Ho-Hyun Nahm, and Yong-Sung Kim, SID Symposium Digest of Technical Papers 43, 11-14 (2012).