Publications

International Journals:

1. N. Topno, V. Hemaja, D. K. Panda, D. K. Dash, R. Swain, S. Mallik, J. K. Dash, “Performance characterization of Ferroelectric GaN HEMT based biosensor,” Microsystem Technologies, 2004. DOI: doi.org/10.1007/s00542-024-05727-7

2. A. K. Sahu, N. Sahoo, R. Swain, T. Sahu, “Effect of non-square potential profile on three subband electron mobility in AlGaAs quantum well structures” Physica Scripta, vol. 99, pp. 075996, 2024. DOI: doi.org/10.1088/1402-4896/ad59d6

3. A. Chakrabarty, N. Sahoo, A. K. Panigrahy, V. B. Sreenivasulu, R. Swain, “DC and RF performance analysis of enhancement mode fin-shaped tri-gate AlGaN/GaN HEMT and MOSHEMT with ultra-thin barrier layer” Physica Scripta, vol. 99, pp. 075020, 2024. DOI: doi.org/10.1088/1402-4896/ad5235

4. S. Panda, R. S. Parida, G. C. Dora, R. Swain, A. K. Panigrahy, A. K. Reddy, M. Suresh, “Effect of Temperature, Doping and Gate Material Engineering on Tri-Gate SOI nFinFET Performance Through TCAD Simulation,” Transaction in Electrical Electronic Materials, 2024. DOI: doi.org/10.1007/s42341-024-00543-2

5. A. K. Panigrahy, V. V. Sai Amudalapalli, D. S. Rani, M. N. Bhukya, H. B. Valiveti, V. B. Sreenivasulu, R. Swain, “Spacer Dielectric Analysis of Multi-Channel Nanosheet FET for Nanoscale Applications,” IEEE Access, vol. 12, pp. 73160-73168 2024 DOI: doi.org/10.1109/ACCESS.2024.3392621.

6. A. Chakrabarty, R. Swain, N. Sahoo, K. Jena, A. K. Panigrahy, T. R. Lenka, “Barrier and channel thickness engineering to optimize fin height for enhancement mode Al0.3Ga0.7N/GaN FinHEMT," International Journal of Numerical Modeling, vol. 37, no. 2, pp. e3197, 2024. DOI: doi.org/10.1002/jnm.3197

7. A. K. Panigrahy, S. Hanumanthakari, S. B. Devamane, S. B. Choubey, M. Prasad, D. Somasundaram, N. Kumareshan, N. A. Vignesh, G. Subramaniam, M. D. Prakash, R. Swain, “Analysis of GAA Junction Less NS FET Towards Analog and RF Applications at 30 nm Regime,” IEEE Open Journal of Nanotechnology, vol. 5, pp. 1-8, 2024, DOI: doi.org/10.1109/OJNANO.2024.3365173.

8. A. K. Panigrahy, S. R. Maniyath, M. Sathiyanarayanan, M. Dholvan, T Ramaswamy, S. Hanumanthakari, N. A. Vignesh, S. Kanithan, R. Swain, “A Faster and Robust Artificial Neural Network based Image Encryption Technique with Improved SSIM”, IEEE Access, vol. 12, pp. 10818-10833, 2024.

9. M. Amani, A. K. Panigrahy, A. Choubey, S. B. Choubey, V. B. Sreenivasulu, D. V. Nair, R. Swain, “Design and comparative analysis of FD-SOI FinFET with dual-dielectric spacers for high speed switching applications,” Silicon, vol. 16, pp. 1525-1534, 2024.

10.  R. Yuvaraj, A. Karuppannan, A. K. Panigrahy, R. Swain, “Design and Analysis of Gate Stack Silicon‑on‑Insulator Nanosheet FET for Low Power Applications,” Silicon, 2022. DOI: doi.org/10.1007/s12633-022-02137-0

11. M. Durga Prakash, S. L. Nihal, S. Ahmadsaidulu, R. Swain, A. K. Panigrahy, “Design and Modelling of Highly Sensitive Glucose Biosensor for Lab-on-chip Applications” Silicon, 2022. DOI: doi.org/10.1007/s12633-021-01543-0

12. A. Chakrabarty, R. Swain, “Modelling of fin width dependent threshold voltage in fin shaped nano channel AlGaN/GaN HEMT”, Superlattices and Microstructures, vol. 141, p. 106497, 2020. DOI: doi.org/10.1016/j.spmi.2020.106497.

13. G. Amarnath, R. Swain, and T. R. Lenka, “Modeling and simulation of 2DEG density and intrinsic capacitances in AlInN/GaN MOSHEMT,” International Journal of Numerical Modeling, vol. 31, no. 1, pp. 1-8, 2018. DOI: 10.1002/jnm.2268. 

14. B. Shougaijam, R. Swain, C. Ngangbam, T. R. Lenka, “Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique,” Journal of Semiconductors, vol. 38, no. 5, pp. 053001, 2017. DOI: doi.org/10.1088/1674-4926/38/5/053001.

15. K. Jena, R. Swain, and T. R. Lenka, “Physics-Based Mathematical Model of 2DEG Sheet Charge Density and DC Characteristics of AlInN/AlN/GaN MOSHEMT”, International Journal of Numerical Modeling, vol. 30, no. 1, pp. 1-11, 2017. DOI: doi.org/10.1002/jnm.2117.

16. R. Swain, K. Jena and T. R. Lenka, “Modeling of Capacitance and Threshold Voltage for ultra- thin normally-off AlGaN/GaN MOSHEMT,” Pramana-Journal of Physics, vol. 88, pp. 1-7, 2017. DOI: 10.1007/s12043-016-1310-y.

17. R. Swain, K. Jena and T. R. Lenka, “Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT”, Material Science in Semiconductor Processing, vol. 53, pp. 66-71, 2016. DOI: doi.org/10.1016/ j.mssp.2016.06.008.

18. R. Swain, K. Jena and T. R. Lenka, “Modeling of Forward Gate Leakage Current in MOSHEMT using Trap Assisted Tunneling and Poole-Frenkel Emission”, IEEE Transactions on Electron Devices, vol. 63, no. 6, pp. 2346-2352. 2016. DOI: doi.org/10.1109/TED.2016.2555851.

19. K. Jena, R. Swain, and T. R. Lenka, “Effect of thin gate dielectrics on DC, RF and Linearity characteristics of Lattice-Matched AlInN/AlN/GaN MOSHEMT”, IET Circuits, Devices & Systems, Mar, 2016. DOI: doi.org/10.1049/iet-cds.2015.0332.

20. B. Shougaijam, R. Swain, C. Ngangbam, T. R. Lenka, “Enhanced Photodetection by Glancing Angle Deposited Vertically Aligned TiO2 Nanowires,” IEEE Transaction on Nanotechnology, vol. 15, no. 3, pp. 389-394, 2016. DOI: doi.org/0.1109/NANO.2016. 2536162.

21. R. Swain, K. Jena and T. R. Lenka, “Model Development for I-V and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT”, Semiconductors, vol. 50, no. 3, pp. 384-389. 2016.

22. K. Jena, R. Swain, and T. R. Lenka, “Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT”, Journal of Electronic Materials, Jan, 2016. DOI: doi.org/10.1007/s11664-015-4296-1.

23. K. Jena, R. Swain, and T. R. Lenka, “Impact of a Drain Field Plate on the Breakdown Characteristics of AlInN/GaN MOSHEMT”, Journal of Korean Physical Society, vol. 67, no. 9, pp. 1592-1596, 2015. DOI: doi.org/10.3938/jkps.67.1592.

24. K. Jena, R. Swain, T.R. Lenka, “Impact of oxide thickness on gate capacitance-Modeling and Comparative Analysis of GaN based MOSHEMTs”, Pramana-Journal of Physics, 2015. DOI: doi.org/10.1007/s12043-015-0948-1.

25. R. Swain, J. panda, K. Jena and T. R. Lenka, “Modeling and Simulation of Oxide Dependent 2DEG Sheet Charge Density in AlGaN/GaN MOSHEMT”, Journal of Computational Electronics, vol. 14, no. 03, pp. 754-761, 2015. DOI: doi.org/10.1007/s10825-015-0711-3.

26. R. Swain, K. Jena and T. R. Lenka, “Interface DOS Dependent Analytical Model Development for DC Characteristics of Normally-off AlN/GaN MOSHEMT”, Superlattices and Microstructures, vol. 84, pp. 54-65, 2015. DOI: doi.org/10.1016/j.spmi.2015.04.025.

27. K. Jena, R. Swain, and T. R. Lenka, “Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices”, International Journal of Numerical Modeling, vol. 29, no. 1, pp. 83-92, 2015. DOI: doi.org/10.1002/jnm.2048.

28. K. Jena, R. Swain, T.R. Lenka, “Impact of barrier thickness on gate capacitance—Modeling and Comparative analysis of GaN based MOSHEMTs”, Journal of Semiconductors, vol. 36, no. 3, pp.034003, 2015. DOI: doi.org/10.1088/1674-4926/36/3/034003.

International Conference:

1. M. Amani, B. V. Reddy, R. Swain, D. V. Nair, A. K. Panigrahy, “Design and Analysis of 10-nm FD-SOI FinFET by Dual-dielectric Spacers for High Speed Switching,” 8th International Conference on Micro-Electronics, Electromagnetics and Telecommunications (ICMEET-2023), National Institute of Technology Mizoram, 2023.

2. M. Mishra, A. Dastidar, R. Swain and S. Sunani, “Design and Analysis of Gate-Stack 7 nm node Tri-gate FinFET for low power Application,” 2023 1st International Conference on Circuits, Power and Intelligent Systems (CCPIS), Bhubaneswar, India, 2023, pp. 1-5, doi: 10.1109/CCPIS59145.2023.10291277.

3. S. Panda, R. S. Parida, G. C. Dora, R. Swain, “Performance Evaluation of Nano-channel FinFET For Lower Power Application”, IEEE AISP, 2023.

4. M. S. Alapati, R. Swain, A. K. Panigrahy, “Hardware Implementation of Posit Numeration System using FPGA for Signal Processing Applications”, IEEE ICOEI, 2023.

5. S. Preeti, A. Padhy, R. Swain, “Incorporating 5G with Human Body Communication through RedTacton Technology”, IEEE AESPC, 2021.

6. A. Chakrabarty, R. Swain, A. K. Panda, “Fin Width dependent Threshold Voltage Modeling in AlGaN/GaN Fin shaped nano channel HEMT”, IEEE CALCON, 2020, Kolkata.

7. A. Chakrabarty, R. Swain, “Surface Potential based modeling of Sheet Charge Density and Estimation of Critical Barrier Thickness in AlGaN/GaN HEMT”, IEEE INDICON, 2019, Rajkot. 

8. R. Swain and T. R. Lenka, “Comparative study of critical barrier thickness for normally-off GaN-MOSHEMTs”, IWPSD, 07-10 Dec, 2015, Bangalore.

9. R. Swain and T. R. Lenka, “Investigation of Critical Barrier Thickness in Lattice Matched InAlN/GaN MOSHEMT towards Normally-off Operation”, IEEE TENCON, 01-04, Nov, 2015, Macau.

10. R. Swain, K. Jena, T. R. Lenka, G. N. Dash and A. K. Panda, “DC & RF Characteristics of normally-off AlN/GaN MOSHEMT by varying Oxide Thickness,” IEEE conference on Electron devices and Solid-State Circuits, Singapore, June 1-4, 2015.

11. R. Swain and T. R. Lenka, “Normally-off Al0.25Ga0.75N/GaN MOSHEMT with Stack Gate Dielectric Structure”, IEEE conference on Electron devices and Solis-State Circuits, Singapore, June 1-4, 2015.

12. R. Swain and T. R. Lenka, “Role of Oxide Interface Charge for Shift in Threshold Voltage of AlN/GaN MOSHEMT with Different Gate Dielectrics,” International Symposium on Semiconductor Materials and Devices, Chennai, Feb 2-5, 2015.

13.  J. Panda, R. Swain, G. S. Rao, and T. R. Lenka, “Realization of Improved Transconductance and capacitance Characteristics in Al0.3Ga0.7N/AlN/GaN HEMT”, IEEE International Conference: Electrical, Electronics, Signals, Communication & Optimization-EESCO, Jan 24-26, 2015.

14. R. Swain, K. Jena, A. Gaini, and T. R. Lenka, “Comparative Study of AlN/GaN HEMT and MOSHEMT Structures by Varying Oxide Thickness”, IEEE Nanotechnology Materials and Devices Conference, Aci Castello, Italy, Oct 12-15, 2014.

Book Chapter:

1. N. Topno, R. Swain, D. K. Dash, M. Suresh, (2024), “Ge-Channel Nanosheet FinFETs for Nanoscale Mixed Signal Application,” In: T. R. Lenka, H. P. T. Nguyen, (eds) Nanoelectronic Devices and Application. Bentham Books.

2. M. Amani, B. V. Reddy, R. Swain, D. V. Nair, A. K. Panigrahy, (2024), “Design and Analysis of 10-nm FD-SOI FinFET by Dual-Dielectric Spacers for High-Speed Switching,” In: V.V.S.S.S. Chakravarthy, V. Bhateja, J. Anguera, S. Urooj, A. Ghosh, (eds) Advances in Microelectronics, Embedded Systems and IoT. ICMEET 2023. Lecture Notes in Electrical Engineering, vol. 1156. Springer, Singapore. https://doi.org/10.1007/978-981-97-0767-6_18

3. R. Swain, T. R. Lenka, “Enhancement-Mode MOSHEMT,” In HEMT Technology and Applications. Springer Tracts in Electrical and Electronics Engineering. Springer, Singapore, 2023. https://doi.org/10.1007/978-981-19-2165-0_10.