PUBLICATIONS

Google Scholar Citations

Refereed Journal Publications

2024

• "Room-temperature telecom Si:Te PIN planar photodiodes: A study on optimizing device dimensions" 

Mohd Saif Shaikh, Junchun Yang, Shuyu Wen, Mircea-Traian Catunean, Mao Wang, Artur Erbe, Slawomir Prucnal, Lars Rebohle, Manfred Helm, Kambiz Jamshidi, Shengqiang Zhou, Yonder Berencén; Materials Science in Semiconductor Processing 179 108515 (2024).

• "Temperature-Dependent Characteristics of GeSn Waveguide  Photodetectors: Step Towards Cryogenic Silicon Photonics" 

Radhika Bansal, Yue-Tong Jheng, Kuo-Chih Lee, Shuyu Wen, Yonder Berencén, Hung-Hsiang Cheng, Guo-En Chang; IEEE Journal of Selected Topics in Quantum Electronics, doi: 10.1109/JSTQE.2024.3390157.

• "Parametric magnon transduction to spin qubits" 

Mauricio Bejarano, Francisco JT Goncalves, Toni Hache, Michael Hollenbach, Christopher Heins, Tobias Hula, Lukas Körber, Jakob Heinze, Yonder Berencén, Manfred Helm, Jürgen Fassbender, Georgy V Astakhov, Helmut Schultheiss; Science Advances 10, eadi2042 (2024).

2023

• "Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques" 

Shuyu Wen, Mohd Saif Shaikh, Oliver Steuer, Slawomir Prucnal, Jörg Grenzer, René Hübner, Marcin Turek, Krzysztof Pyszniak, Sebastian Reiter, Inga Anita Fischer, Yordan M. Georgiev, Manfred Helm, Shaoteng Wu, Jun-Wei Luo, Shengqiang Zhou, Yonder Berencén; Applied Physics Letters 123, 081109 (2023).

• "On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands" 

Mohd Saif Shaikh, Shuyu Wen, Mircea-Traian Catuneanu, Mao Wang, Artur Erbe, Slawomir Prucnal, Lars Rebohle, Shengqiang Zhou, Kambiz Jamshidi, Manfred Helm, and Yonder Berencén; Optics Express 31, 26451-26462 (2023).

• "Optical properties of selenium-hyperdoped Si layers: effects of laser and thermal treatment" 

F. F. Komarov, L. A. Vlasukova, O. V. Milchanin, I. N. Parkhomenko, Y. Berencén, A. E. Alzhanova, Ting Wang and J. Zuk; Journal of Applied Spectroscopy 90, 358–365 (2023).

• "Molecular engineering of naphthalene spacers in low-dimensional perovskites" 

Andrei Mitrofanov, Yonder Berencén, Elaheh Sadrollahi, Regine Boldt, David Bodesheim, Hendrik Weiske, Fabian Paulus, Jochen Geck, Gianaurelio Cuniberti, Agnieszka Kuc, and Brigitte Voit; Journal of Materials Chemistry C 11, 5024-5031 (2023).

• "Formation of vertical SnSe/SnSe2 p-n heterojunction by NH3 plasma-induced phase transformation" 

Yi Li , Juanmei Duan , Yonder Berencén , René Hübner , Hsu-Sheng Tsai , C. N. Kuo , Chen Shan Lue , Manfred Helm, Shengqiang Zhou, and Slawomir Prucnal; Nanoscale Advances 5, 443 (2023).

2022

• "Wafer-scale nanofabrication of telecom single-photon emitters in silicon" 

Michael Hollenbach, Nico Klingner, Nagesh S. Jagtap, Lothar Bischoff, Ciarán Fowley, Ulrich Kentsch, Gregor Hlawacek, Artur Erbe, Nikolay V. Abrosimov, Manfred Helm, Yonder Berencén, and Georgy V. Astakhov; Nature Communications 13, 7683 (2022).

• "A snapshot review on flash lamp annealing of semiconductor materials" 

Lars Rebohle, S. Prucnal, Y. Berencén, V. Begeza, and S. Zhou; MRS Advances 7,1301–1309 (2022).

• "Metal-assisted chemically etched silicon nanopillars hosting telecom photon emitters" 

Michael Hollenbach, Nagesh S. Jagtap,  Ciarán Fowley, Juan Baratech, Verónica Guardia-Arce,  Ulrich Kentsch, Anna Eichler-Volf,  Nikolay V. Abrosimov,  Artur Erbe,  ChaeHo Shin, Hakseong Kim, Manfred Helm,  Woo Lee,  Georgy V. Astakhov, and  Yonder Berencén; Journal of Applied Physics 132, 033101 (2022).

• "Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface" 

I. D. Breev, Z. Shang, A. V. Poshakinskiy, H. Singh, Y. Berencén, M. Hollenbach, S. S. Nagalyuk, E. N. Mokhov, R. A. Babunts, P. G. Baranov, D. Suter, S. A. Tarasenko, G. V. Astakhov, A. N. Anisimov; NPJ Quantum Information 8, 23 (2022).

• "Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon" 

Mao Wang, Ye Yu, Slawomir Prucnal, Yonder Berencén, Mohd Saif Shaikh, Lars Rebohle, Muhammad Bilal Khan, Vitaly Zviagin, René Hübner, Alexej Pashkin, Artur Erbe, Yordan M. Georgiev, Marius Grundmann, Manfred Helm, Robert Kirchner, Shengqiang Zhou; Nanoscale 14, 2826 (2022).

2021

• "Microwave-assisted spectroscopy of vacancy-related spin centers in hexagonal SiC" 

Z. Shang, Y. Berencén, M. Hollenbach, S. Zhou, H. Kraus, T. Ohshima, G. V. Astakhov; Physical Review Applied 15, 034059  (2021).

• "Mapping the Stray Fields of a Micromagnet Using Spin Centers in SiC" 

Mauricio Bejarano, Francisco Jose Trindade Goncalves, Michael Hollenbach, Toni Hache, Tobias Hula, Yonder Berencén, Jürgen Fassbender, Manfred Helm, Georgy V. Astakhov, Helmut Schultheiss; IEEE MAGNETICS LETTERS 12, 8100605 (2021).

• "Silicon‐based intermediate‐band infrared photodetector realized by Te hyperdoping" 

Mao Wang, Eric García-Hemme, Yonder Berencén, René Hübner, Yufang Xie, Lars Rebohle, Chi Xu, Harald Schneider, Manfred Helm, Shengqiang Zhou; Advanced Optical Materials 9, 2001546 (2021).

• "Room‐temperature infrared photoresponse from ion beam‐hyperdoped silicon" 

Mao Wang, Yonder Berencén; Feature Article: Physica Status Solidi A 218, 2000260 (2021).

2020

• "Dissolution of donor-vacancy clusters in heavily doped n-type germanium" 

Slawomir Prucnal, Maciej Oskar Liedke, Xiaoshuang Xiaoshuang Wang, Maik Butterling, Matthias Posselt, Joachim Knoch, Horst Windgassen, Eric Hirschmann, Yonder Berencén, Lars Rebohle, Mao Wang, Enrico Napolitani, Jacopo Frigerio, Andrea Ballabio, Giovanni Isella, René Hübner, Andreas Wagner, Hartmut Bracht, Manfred Helm, Shengqiang Zhou; New Journal of Physics, 22, 123036 (2020).

• "Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si" Mao Wang, A. Debernardi, Wenxu Zhang, Chi Xu , Ye Yuan, Yufang Xie, Y. Berencén, S. Prucnal, M. Helm, Shengqiang Zhou; Physical Review B  102, 085204 (2020).

• "Engineering telecom single-photon emitters in silicon for scalable quantum photonics" 

Michael Hollenbach, Yonder Berencén, Ulrich Kentsch, Manfred Helm, G. V. Astakhov; Optics Express 28, 26111 (2020).

• "Local vibrational modes of Si vacancy spin qubits in SiC" 

Z. Shang, A. Hashemi, Y. Berencén, H.-P. Komsa, P. Erhart, S. Zhou, M. Helm, A. V. Krasheninnikov, G. V. Astakhov; Physical Review B 101, 144109  (2020).

• "Structural and optical properties of Si hyperdoped with Te by ion implantation and pulsed laser annealing"

 Fadei F. Komarov, Nikita S. Nechaev, Gennadii D. Ivlev, Liudmila A. Vlasukova, Irina N. Parkhomenko, Elke Wendler, Ivan A. Romanov, Yonder Berencén, Vladimir V. Pilko, Dmitrii V. Zhigulin, Alexander F. Komarov; Vacuum 178, 109434 (2020).

2019

• "Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy" 

S. Prucnal, Y. Berencén, M. Wang,Y. Georgiev, A. Erbe, M. Khan, R. Böttger, R. Hübner, T. Schönherr, J. Kalbacova, L. Vines, S. Facsko, M. Engler, D. R. T. Zahn, J. Knoch, M. Helm, W. Skorupa and S. Zhou; Journal of Applied Physics, 125, 245703 (2019).

• "Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing" 

S. Prucnal, Y. Berencén, M. Wang, L. Rebohle, R. Kudrawiec, M. Polak, V. Zviagin, R. Schmidt-Grund, M. Grundmann, J. Grenzer, M. Turek, A. Droździel, K. Pyszniak, M. Helm, W. Skorupa and S. Zhou; Journal of Applied Physics, 125, 203105 (2019).

• "Breaking the doping limit in silicon by deep impurities" 

Mao Wang, A. Debernardi, Y. Berencén, R. Heller, Chi Xu, Ye Yuan, Yufang Xie, R. Böttger, L. Rebohle, W. Skorupa, M. Helm, S. Prucnal, Shengqiang Zhou; Physical Review Applied, 11, 054039 (2019).

• "Thermal stability of Te-hyperdoped Si: Atomic-scale correlation of the structural, electrical and optical properties" 

Mao Wang, R. Hübner, Chi Xu, Yufang Xie, Y. Berencén, R. Heller , L. Rebohle , W. Skorupa, M. Helm, S. Prucnal, Shengqiang Zhou; Physical Review Materials, 3, 044606 (2019).

• "Structural and optical properties of pulsed-laser deposited crystalline ß-Ga2O3 thin films on silicon" 

Y. Berencén, Y. Xie, M. Wang, S. Prucnal, L. Rebohle, Shengqiang Zhou; Semiconductor Science and Technology, 34, 035001 (2019).

2018

• "Strain and band-gap engineering in Ge-Sn alloys via P doping" 

Slawomir Prucnal, Yonder Berencén,  Mao Wang, Jörg Grenzer, Matthias Voelskow, Rene Hübner, Yuji Yamamoto, Alexander Scheit, Florian Bärwolf, Vitaly Zviagin, Rüdiger Schmidt-Grund, Marius Grundmann, Jerzy Żuk, Marcin Turek, Andrzej Droździel, Krzysztof Pyszniak, Robert Kudrawiec, Maciej P. Polak, Lars Rebohle, Wolfgang Skorupa, Manfred Helm, Shengqiang Zhou; Physical Review Applied, 10, 064055 (2018).

• "Formation of n- and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping" 

Y. Berencén, S. Prucnal, W. Möller, R. Hübner, L. Rebohle, T. Schönherr, M. Bilal Khan, M. Wang, M. Glaser, Y. M. Georgiev, A. Erbe, A. Lugstein, M. Helm, S. Zhou; Nanotechnology, 29, 474001 (2018).

• "Irradiation effects on the structural and optical properties of single crystal ß-Ga2O3" 

Chaoming Liu, Yonder Berencén, Jianqun Yang, Yidan Wei, Mao Wang, Ye Yuan, C Xu, Yufang Xie, Xingji Li, Shengqiang Zhou; Semiconductor Science and Technology, 33, 095022 (2018).

• "Extended infrared photoresponse in Te-hyperdoped Si at room temperature" 

Mao Wang, Y. Berencén, E. Garcia-Hemme, S. Prucnal, R. Hübner, Ye Yuan, Chi Xu, L. Rebohle, R. Böttger, R. Heller, H. Schneider, W. Skorupa, M. Helm, Shengqiang Zhou; Physical Review Applied, 10, 024054 (2018).

• "Ex-situ n+ doping of GeSn alloys via non-equilibrium processing" 

Slawomir Prucnal, Yonder Berencén, Mao Wang, Lars Rebohle, Roman Boettger, Inga Anita Fischer, Lion Augel, M. Oehme, Joerg Schulze, Matthias Voelskow, Manfred Helm, Wolfgang Skorupa, Shengqiang Zhou; Semiconductor Science and Technology, 33, 065008 (2018).

• "Structural and electrical properties of Se-hyperdoped Si via ion implantation and flash lamp annealing" 

F. Liu, S. Prucnal, Ye Yuan, R. Heller, Y. Berencén, R. Böttger, L. Rebohle, W. Skorupa, M. Helm, S. Zhou; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 424, 52 (2018).

• "CMOS‐compatible controlled hyperdoping of silicon nanowires" 

Yonder Berencén, Slawomir Prucnal, Wolfhard Möller, René Hübner, Lars Rebohle, Roman Böttger, Markus Glaser, Tommy Schönherr, Ye Yuan, Mao Wang, Yordan M. Georgiev, Artur Erbe, Alois Lugstein, Manfred Helm, Shengqiang Zhou, Wolfgang Skorupa; Advanced Materials Interfaces, 5, 1800101 (2018).

• "On the insulator-to-metal transition in titanium-implanted silicon"

Fang Liu, Mao Wang, Yonder Berencén, Slawomir Prucnal, Martin Engler, René Hübner, Ye Yuan, René Heller, Roman Böttger, Lars Rebohle, Wolfgang Skorupa, Manfred Helm, Shengqiang Zhou; Scientific Reports, 8, 4164 (2018).

2017

• "In-situ ohmic contact formation for n-type Ge via non-equilibrium processing" 

Slawomir Prucnal, Jacopo Frigerio, Enrico Napolitani, Andrea Ballabio, Yonder Berencén, Lars Rebohle, Mao Wang, Roman Boettger, Matthias Voelskow, Giovanni Isella, René Hübner, Manfred Helm, Shengqiang Zhou, Wolfgang Skorupa; Semiconductor Science and Technology, 32, 115006 (2017).

• "Realizing the insulator-to-metal transition in Se-hyperdoped Si via non-equilibrium material processing" 

F. Liu, S. Prucnal, Y. Berencén, Z. Zhang, Y. Yuan, Y. Liu, R. Heller, R. Boettger, L. Rebohle, W. Skorupa, M. Helm, S. Zhou; Journal of Physics D: Applied Physics, 50, 415102 (2017).

• "Engineering of optical and electrical properties of ZnO by non-equilibrium thermal processing: The role of zinc interstitials and zinc vacancies" 

S. Prucnal, Jiada Wu, Y. Berencén, M. O. Liedke, A. Wagner, F. Liu, M. Wang, L. Rebohle, S. Zhou, Hua Cai, W. Skorupa; Journal of Applied Physics 122, 035303 (2017).

• "Room-temperature short-wavelength infrared Si photodetector" 

Yonder Berencén, Slawomir Prucnal, Fang Liu, Ilona Skorupa, René Hübner, Lars Rebohle, Shengqiang Zhou, Harald Schneider, Manfred Helm, Wolfgang Skorupa; Scientific Reports 7, 43688 (2017).

• "Hot electron engineering for boosting electroluminescence efficiencies of silicon-rich nitride light emitting devices" 

Y. Berencén, B. Mundet, J. A. Rodríguez, J. Montserrat, C. Domínguez, B. Garrido; Journal of Luminescence 183, 26 (2017).

2016

• "Enhancement of carrier mobility in thin Ge layer by Sn co-doping" 

S. Prucnal, F. Liu, Y. Berencén, L. Vines, L. Bischoff, J. Grenzer, S. Andric, S. Tiagulsky, K. Pyszniak, M. Turek, A. Drozdziel, M. Helm, S. Zhou, W. Skorupa; Semiconductor Science and Technology 31, 105012 (2016).

• "Ultra-doped n-type germanium thin films for sensing in the mid-infrared" 

S. Prucnal, F. Liu, M. Voelskow, L. Vines, L. Rebohle, D. Lang, Y. Berencén, S. Andric, R. Boettger, M. Helm, S. Zhou, W. Skorupa; Scientific Reports 6, 27643 (2016).

• "Luminescence mechanism for Er3+ ions in a silicon-rich nitride host under electrical pumping" 

Y. Berencén, S. Illera, L. Rebohle, J. M. Ramírez, R. Wutzler, A. Cirera, D. Hiller, J. A. Rodríguez, W. Skorupa, B. Garrido; Journal of Physics D: Applied Physics 49, 085106 (2016).

2015

• "Far-field characterization of the thermal dynamics in lasing microspheres" 

J. M. Ramírez, D. Navarro-Urrios, N. E. Capuj, Y. Berencén, B. Garrido, A. Tredicucci; Scientific Reports 5, 14452 (2015).

• "Vertical coupling of laser glass microspheres to buried silicon nitride ellipses and waveguides" 

D. Navarro-Urrios, J. M. Ramírez, N. E. Capuj, Y. Berencén, B. Garrido, A. Tredicucci; Journal of Applied Physics 118, 093103 (2015).

• "Structural parameters effect on the electrical and electroluminescence properties of silicon nanocrystals/SiO2 superlattices" 

J. López-Vidrier, Y. Berencén, S. Hernández, B. Mundet, S. Gutsch, J. Laube, D. Hiller, P. Löper, M. Schnabel, S. Janz, M. Zacharias, B. Garrido; Nanotechnology 26, 185704 (2015).

• "Amorphous sub-nanometre Tb-doped SiOxNy/SiO2 superlattices for optoelectronics" 

J. M. Ramírez, J. Wojcik, Y. Berencén, A. Ruiz-Caridad, S. Estradé, F. Peiró, P. Mascher, B. Garrido; Nanotechnology 26, 085203 (2015).

2014

• "The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments" 

L. Rebohle, Y. Berencén, R. Wutzler, M. Braun, D. Hiller, J. M. Ramírez, B. Garrido, M. Helm, W. Skorupa; Journal of Applied Physics 116, 123104 (2014). 

• "Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 µm" 

J. M. Ramírez, S. Cueff, Y. Berencén, C. Labbé, B. Garrido; Journal of Applied Physics 116, 083103 (2014).

2013

• "Electroluminescence efficiencies of erbium in silicon-based hosts" 

S. Cueff, J. M. Ramírez, J. A. Kurvits, Y. Berencén, R. Zia, B. Garrido, R. Rizk, C. Labbé; Applied Physics Letters 103, 191109 (2013).

• "Charge transport and electroluminescence of silicon nanocrystals/SiO2 superlattices" 

J. López-Vidrier, Y. Berencén, S. Hernández, O. Blázquez, S. Gutsch, J. Laube, D. Hiller, P. Löper, M. Schnabel, S. Janz, M. Zacharias, B. Garrido; Journal of Applied Physics 114, 163701 (2013).

• "Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices" 

Y. Berencén, R. Wutzler, L. Rebohle, D. Hiller, J. M. Ramírez, J. A. Rodríguez, W. Skorupa, B. Garrido;  Applied Physics Letters 103, 111102 (2013).

• "Carrier transport and electroluminescence efficiency of erbium-doped silicon nanocrystal superlattices" 

J. M. Ramírez, Y. Berencén, L. López-Conesa, J. M. Rebled, F. Peiró, B. Garrido; Applied Physics Letters 103, 081102 (2013).

• "Structural and compositional properties of Er-doped silicon nanoclusters/oxides for multilayered photonic devices studied by STEM-EELS" 

A. Eljarrat, L. López-Conesa, J. M. Rebled, Y. Berencén, J. M. Ramírez, B. Garrido, C. Magén, S. Estradé, F. Peiró; Nanoscale 5, 9963 (2013).

• "Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip"

 J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, B. Garrido; Nanotechnology 24, 115202 (2013).

• "Toward a 1.54 µm electrically driven erbium-doped silicon slot waveguide and optical amplifier" 

A. Tengattini, D. Gandolfi, N. Prtljaga, A. Anopchenko, J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, D. Navarro-Urrios, P. Rivallin, K. Surana, B. Garrido, J. M. Fedeli, L. Pavesi; Journal of Lightwave Technology 31, 391 (2013).

2012

• "Electrical pump & probe and injected carrier losses quantification in Er-doped Si slot waveguides” 

J. M. Ramírez, Y. Berencén, F. Ferrarese Lupi, D. Navarro-Urrios, A. Anopchenko, A. Tengattini, N. Prtljaga, L. Pavesi, P. Rivallin, J. M. Fedeli, B. Garrido; Optics Express 20, 28808 (2012).

• "Bulk silica-based luminescent materials by sol-gel processing of non-conventional precursors"

 J. A. Rodríguez, C. Fernández-Sánchez, C. Domínguez, S. Hernández, Y. Berencén; Applied Physics Letters 101, 171908 (2012).

• "Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions"

 S. Cueff, C. Labbé, O. Jambois, Y. Berencén, A. J. Kenyon, B. Garrido, R. Rizk; Optics Express 20, 22490 (2012).

• "Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors" 

Y. Berencén, J. M. Ramírez, O. Jambois, C. Domínguez, J. A. Rodríguez, B. Garrido; Journal of Applied Physics 112, 033114 (2012).

• "Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation" 

J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido; Nanotechnology 23, 125203 (2012).

• "Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes" 

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi; Journal of Applied Physics 111, 063102 (2012).

• "Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er"

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido; Journal of Physics D: Applied Physics 45, 045103 (2012).

• "Polarization strategies to improve the emission of Si-based light sources emitting at 1.55 μm" 

J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, N. Daldosso, L. Pavesi, J.-P. Colonna, J. M. Fedeli, B. Garrido; Materials Science and Engineering B 177, 734 (2012).

2011

• "Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures" 

Y. Berencén, O. Jambois, J. M. Ramírez, J. M. Rebled, S. Estradé, F. Peiró, C. Domínguez, J. A. Rodríguez, B. Garrido;  Optics Letters 36, 2617 (2011).

• "Metal-nitride-oxide-semiconductor light-emitting devices for general lighting" 

Y. Berencén, J. Carreras, O. Jambois, J. M. Ramírez, J. A. Rodríguez, C. Domínguez, C. E. Hunt, B. Garrido;  Optics Express 19, A234 (2011).

• "Copropagating pump and probe experiments on Si-nc in SiO2 rib waveguides doped with Er: The optical role of non-emitting ions" 

D. Navarro-Urrios, F. Ferrarese Lupi, N. Prtljaga, A. Pitanti, O. Jambois,  J. M. Ramírez, Y. Berencén, N. Daldosso, B. Garrido, L. Pavesi; Applied Physics Letters 99, 231114 (2011).

• "Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions" 

O. Jambois, Y. Berencén, K. Hijazi, M. Wojdak, A. J. Kenyon, F.  Gourbilleau, R. Rizk, B. Garrido; Journal of Applied Physics 106, 063526 (2009).

CONFERENCE PROCEEDINGS: 

• "Luminescence yield in Al and Tb3+ delta-doped oxide thin films fabricated by electron beam evaporation" 

O. Blázquez ; J. M. Ramírez ; J. López-Vidrier ; Y. Berencén ; S. Hernández ; P. Sanchis ; B. Garrido; SPIE Photonics, Integrated Photonics: Materials, Devices, and Applications III, 9520 (7) 95200-95207 (2015).

• "On the photoluminescence of as-deposited Tb-doped silicon oxides and oxynitrides fabricated by ECR-PECVD" J. M. Ramírez, J. Wojcik, Y. Berencén, P. Mascher, and B. Garrido; SPIE Photonics Europe, 9133 (9) 9913309-9913318 (2014).

• "Transport and electroluminescence properties of size-controlled silicon nanocrystals embedded in SiO2 matrix following the superlattice approach" 

J. López-Vidrier, Y. Berencén, L. López-Conesa, O. Blázquez, J. M. Ramírez, S. Estradé, F. Peiró, S. Hernández, and B. Garrido; ECS transactions, 61 (5) 133-139 (2014).

• "Rare earth doped metal-oxide-semiconductor structures: A promising material system or a dead end of optoelectronic evolution?" 

L. Rebohle, Y. Berencén, M. Braun, B. Garrido, D. Hiller, B. Liu, J. M. Ramírez, J. M. Sun, R. Wutzler, M. Helm, and W. Skorupa; ECS transactions, 61 (5) 175-185 (2014).

• "Charge trapping and physical parameters of Er-doped light-emitting field-effect transistors" 

J. M. Ramírez, Y. Berencén, and B. Garrido; Physica Status Solidi (a) 211 (2) 467 (2014).

• "Electroluminescence from Si-based light emitting devices" 

B. Mundet, Y. Berencén, J. M. Ramírez, J. Montserrat, C. Domínguez, and B. Garrido; Óptica pura y aplicada 46 (4) 315 (2013).

• "Electrically pumped Er-doped light emitting slot waveguides for on-chip optical routing at 1.54 μm" 

J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, F. Ferrarese Lupi, A. Anopchenko, N. Prtljaga, P. Rivallin, A. Tengattini, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, and B. Garrido; Proc. SPIE, Integrated Photonics: Materials, Devices, and Applications II 8767 87670I (2013).

• "Role of electron and hole transport processes in conductivity and light emission of silicon nanocrystals field-effect transistors" 

L. Cattoni, A. Tengattini, A. Anopchenko, J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, B. Garrido, J.-M. Fedeli, and L. Pavesi; Proc. SPIE 8629, Silicon Photonics VIII, 8629 862914 (2013).

• "Optimizing Er-doped Layer Stacks for Integrated Light Emitting Devices" 

J. M. Ramírez, Y. Berencén, L. López-Conesa, J. M. Rebled, A. Eljarrat, S. Estradé, F. Peiró, J.-M. Fedeli, and B. Garrido; Electro - Chemical Society Transactions 53 (4) 81 (2013).

• "Er-doped Si-based electroluminescent capacitors: Role of different host matrices on the electrical and luminescence properties" 

Y. Berencén, J. M. Ramírez, and B. Garrido; in Proceedings of the 2013 Spanish Conference on Electron Devices, 245 (2013).

• "Opto-Electrical Characterization of Erbium Doped Slot Waveguides" 

A. Tengattini, D. Gandolfi, A. Marconi, A. Anopchenko, N. Prtljaga, J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, D. Navarro-Urrios, B. Garrido, J.-M. Fedeli, P. Rivallin, K. Surana, and L. Pavesi; Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III 843118 (2012). 

• "1.54 μm Er-doped light emitting devices: Role of silicon content" 

A. Tengattini, A. Marconi, A. Anopchenko, N. Prtljaga, L. Pavesi, J.M. Ramírez, O. Jambois, Y. Berencén, D. Navarro- Urrios, B. Garrido, F. Milesi, J.-P. Colonna, and J.-M. Fedeli; The 8th IEEE International Conference on Group IV Photonics 77 (2011).

• "Effect of the annealing treatments on the transport and electroluminescence properties of SiO2 layers doped with Er and Si nanoclusters" 

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, S. Hernández, A. Anopchenko, A. Marconi, N. Prtljaga, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, and B. Garrido; Material Research Society (MRS) proceeding 1289 (2010).

• "Study of the electroluminescence at 1.5 µm of SiOx:Er layers made by reactive magnetron sputtering" 

O. Jambois, Y. Berencén, S. Y. Seo, A. J. Kenyon, M. Wojdak, K. Hijazi, L. Khomenkova, F. Gourbilleau, R. Rizk, and B. Garrido; in Proceedings of the 2009 Spanish Conference on Electron Devices, 69 (2009).

• "Prism coupling characterization of planar optical waveguides made by silver ion exchange in glass" 

O. Hidalgo, Y. Berencén, and J. Rodríguez; Physica Status Solidi (c) 2 (10), 3746-3749 (2005).

CONTRIBUTIONS TO BOOKS: 

• Authors: José A. Rodríguez; Yonder Berencén

Chapter Title: Sensores Ópticos

Book Title: MÉTODOS DE PROCESAMIENTO AVANZADO E INTELIGENCIA ARTIFICIAL EN SISTEMAS SENSORES Y BIOSENSORES

Publisher: Editorial Reverté, S.A.

Number of authors: 2

Pages, Initial: 87 Final: 108 Year: 2009 Place of publication: (SPAIN) ISBN: ISBN 978-84-291-8

Publication code: 255517

• Authors: B. Garrido, S. Hernández, Y. Berencén, J. López-Vidrier, J. M. Ramírez, O. Blázquez, B. Mundet. 

Chapter Title: Electrical transport in Si-based nanostructured superlattices

Book Title: NANOTECHNOLOGY AND PHOTOVOLTAIC DEVICES: LIGHT ENERGY HARVESTING WITH GROUP IV NANOSTRUCTURES

Publisher: Pan Stanford Publishing

Number of authors: 7

Pages, Initial: 233 Final: 269 Year: 2014 Place of publication: (United Kingdom) ISBN: ISBN 9789814463638

Publication code: 255517