Yonder Berencén

Quantum Photonics | Optoelectronics | Semiconductor Physics

I am a physicist and research group leader at the Helmholtz-Zentrum Dresden-Rossendorf (HZDR), where I lead the Quantum Photonics & Optoelectronics group within the Institute of Ion Beam Physics and Materials Research.

My research explores how ion beams and defect engineering can transform conventionally passive semiconductor materials into active platforms for photodetection, light emission, quantum technologies, and integrated photonics. A central goal of my work is to develop scalable, CMOS-compatible devices operating across the telecommunication wavelength range.

About me

I obtained my B.S. and M.S. degrees in Physics from the University of Havana and completed my Ph.D. in Physics at the University of Barcelona in 2014, receiving the highest distinction. My doctoral research focused on rare-earth ions and silicon nanostructures for integrated light-emitting devices operating at visible and telecommunication wavelengths.

Since then, my work has expanded from classical silicon optoelectronics to defect-based quantum photonics and sensing. At HZDR, I lead interdisciplinary research combining ion implantation, semiconductor processing, optical spectroscopy, spin resonance, and nanophotonic device integration.

Explore my research

Three connected routes toward scalable semiconductor photonic and quantum technologies.

• Silicon quantum photonics

Telecom color centers, single-photon emission, spin control, and nanophotonic integration.

• Integrated optoelectronics

Ion-implanted silicon detectors for visible-to-short-wave-infrared photonics.

• Quantum sensing

Spin defects in two-dimensional materials and hybrid magnetic systems.