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YONDER BERENCÉN
Quantum Photonics, Optoelectronics, Semiconductor Physics
Institute of Ion Beam Physics and Materials Research
Department of Semiconductor Materials
Quantum Materials and Technology
Bautzner Landstraße 400
01328 Dresden
Germany
Phone: +49(0)351 260 3137
E-mail: y.berencen@hzdr.de
BRIEF BIOGRAPHY
Dr. Berencén obtained his B.S. and M.S. degrees in Physics from the University of Havana before completing his Ph.D. in Physics at the University of Barcelona in 2014, achieving the highest honors. Throughout his doctoral studies, he conducted experimental research focused on the advancement of integrated silicon photonic applications. His work primarily centered on the development of rare-earth ions and Si nanostructures as a material platform for light-emitting devices, specifically targeting the visible and telecommunication-wavelength range.
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