PROGRAM

• Advanced Program (download)

• Plenary Speakers

GaN-based3-Dimensional Devices: FinFET to Nanowire-FET

Jung-Hee Lee

Kyungpook National University, Korea

Utilization of spin polarized electrons for future electronis

Joonyeon Chang

Korea Institute of Science and Technology (KIST), Korea

Materials design for versatile electron devices in the IoT era

Akira TORIUMI

University of Tokyo, Japan

• Invited Speakers

Engineering of Vertically Integrated Nanowire in MOSFET and Its Application toward Versatile Memory Cells

Byung-Hyun Lee

Semiconductor R&D Center, Samsung Electronics, Korea

Thermal Transport in High-Power GaN Electronics

Jungwan Cho

Mechanical Engineering, Kyung Hee University, Korea

A physical model for set switching of phase-change memory

Yongwoo Kwon

Meterials Science and Engineering, Hongik University, Korea

Hybrid III-Nitride/Nanocrystals White Light-Emitting Diodes

Bin Liu

Nanjing University, China

Transparent oxide TFT array-based electrically tunable terahertz filter

Weizong Xu

Nanjing University, China

III-V semiconductor/Dielectric interface engineering and characterization

Jae-Gil Lee

Seoul National University, Korea

Latest Developments on SiGe SiGe BiCMOS Technologies with “More-than-Moore” Modules for mm-wave and THz Applications

Mehmet Kaynak

IHP, Germany

Sub-lithographic Patterning by Tilted Ion Implantation

Sangwan Kim

Department of Electrical and Computer Engineering, Ajou University, Korea

Silicon-based near infrared photodetector with high responsivity

Kihyun Kim

Creative IT Engineering, Pohang University of Science and Technology, Korea

Silicon-based Tunneling Field-Effect Transistors for Ultra-low Power Applications

Jun-Sik Yoon

Creative IT Engineering, Pohang University of Science and Technology, Korea

Noble functionalities created by "Yuragi/Fluctuation" in strongly correlated electron compounds

Hitoshi TABATA

University of Tokyo, Japan

Application of graphene to electronic devices including sensors

Kenjiro HAYASHI

FUJITSU, Japan

Effective annealing for Si film and for junction formation

Takashi NOGUCHI

University of the Ryukyus, Japan

Single-crystal graphene on SiC substrate: growth and applications

Masao NAGASE

Tokushima University, Japan

Design of nanoarchitecture for independent control of carrier and phonon transports

Yoshiaki NAKAMURA

Osaka University

Ion implantation technique for controlling conduction type of GaN

Tetsuo NARITA

Toyota Central R&D LABS., INC., Japan

MEMS Metamaterial Tunable Filters for THz Optics

Hiroshi TOSHIYOSHI

University of Tokyo, Japan

MOS interface engineering for advanced SiC and GaN power devices

Takuji HOSOI

Osaka University, Japan

GaN-HEMT Device Technologies for W-band High-Power Amplifier

Shiro OZAKI

Fujitsu Lab. Ltd., Japan

Related to CNT

Yutaka OHNO

Nagoya University, Japan

Technology trend of ultra-high data rate wireless CMOS transceivers

Akira MATSUZAWA

Tokyo Institute of Tech., Japan