Patent

[1] Thomas Kuech, Kevin Schulte, Luke Mawst, T. W. Kim and Brian Zutter, 

     “Virture substrate by combining thick, highly relaxed HVPE metamorphic buffer layers with chemical and mechanical 

       polishing”, US Patent No. 20,140,339,505, November 2014. 

[2] T. W. Kim, Sang-woo Kang, Yongkyu Kim, and Suyong Kwon, 

     “Multi-layered resistive type multi-point temperature measuring wafer sensor and method for fabricating the same”, KS 10-

       1746558, 2017.

[3] Sang Jun Lee, Jun Oh Kim, Youngho Kim, Sang-woo Kang, T. W. Kim, 

     “The Tandem Solar Cell With The Metal Disk Array”, KS 10-1783971, 2017.

[4] T. W. Kim, Sang-woo Kang, Yongkyu Kim, and Suyong Kwon, 

     “Multi-layered resistive-thermocouple type temperature measuring wafer sensor and method for fabricating the same”, KS 10-

       1746560, 2017. 

[5] T. W. Kim, Sang-woo Kang, Yongkyu Kim, and Suyong Kwon, 

     “Multi-layered resistive type multi-point temperature measuring wafer sensor and method for fabricating the same”, KS 10-1820675,

      2017. 

[6] T. W. Kim, Sang-woo Kang, Yongkyu Kim, and Suyong Kwon, 

     “On-wafer power supply using thermoelectric effect and method for fabricating the same”, KS 10-1825461, 2018. 

[7] Sang-woo Kang, Jihun Mun, T. W. Kim, Jongho Kim, 

     “High accuracy real-time particle counter”, KS 10-1857950, 2018.  

[8] T. W. Kim, Sang-woo Kang, Yongkyu Kim, and Suyong Kwon, 

     “온도측정 웨이퍼 센서 및 그 제조방법”, PCT-D17017, 2017.  

[9] T. W. Kim, Hyo-Chang Lee, Sang-woo Kang, Jung-Hyung Kim, and Dae-Jin Seong, 

     “Method and Apparatus for inducing phase transition in a thin film of transition metal dichalcogenide”, KS 10-1974165, 

       2019.

[10] T. W. Kim, Hyo-Chang Lee, Sang-woo Kang, and Jung-Hyung Kim, 

     “Semiconductor device and Method for manufacturing thereof”, KS 10-1972739, 2019.

[11]  Sang-woo Kang, Jihun Mun, T. W. Kim, 

        “Method of a releasing target layer using a two-dimensional exfoliation layer”, KS 10-2025724, 2019.

[12]  T. W. Kim, 

        “Te 도핑된 p형 MoS2 필름이 적용된 pFET 디바이스”, KS 10-2552210, 2023.