2023

• T. Mion et al., “High Isolation, Double-Clamped, Magnetoelectric Microelectromechanical Resonator Magnetometer,” Sensors, vol. 23, no. 20, Art. no. 20, Jan. 2023.
• Y. Huo, S. Sofronici, M. J. D’Agati and R. H. Olsson, "Low Power Circuit Interfaces for Strain Modulated Multiferroic Biomagnetic Sensors," in IEEE Open Journal of the Solid-State Circuits Society, vol. 3, pp. 214-222, 2023.
• Z. Tang, G. Esteves, and R. H. Olsson III, “Sub-quarter micrometer periodically poled Al0.68Sc0.32N for ultra-wideband photonics and acoustic devices,” Journal of Applied Physics, vol. 134, no. 11, p. 114101, Sep. 2023.
• Y. He et al., “Metal-ferroelectric AlScN-semiconductor memory devices on SiC wafers,” Applied Physics Letters, vol. 123, no. 12, p. 122901, Sep. 2023.
• A.-M. Zaccarin, G. M. Iyer, R. H. Olsson and K. T. Turner, "Fabrication and Characterization of Soil Moisture Sensors on a Biodegradable, Cellulose-Based Substrate," in IEEE Sensors Journal,2023.
• L. Hackett et al., “Aluminum scandium nitride films for piezoelectric transduction into silicon at gigahertz frequencies,” Applied Physics Letters, vol. 123, no. 7, p. 073502, Aug. 2023.
• A.-M. Zaccarin, G. M. Iyer, A. Kochhar, R. Vetury, K. T. Turner and R. H. Olsson, "High Performance Lamb Wave Resonator Operating in the 900 MHz ISM Band for Wireless Sensing Applications," 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023, San Diego, CA, USA, 2023, pp. 1168-1171
• Izhar et al., "A K-Band Bulk Acoustic Wave Resonator Using Periodically Poled Al0.72Sc0.28N," in IEEE Electron Device Letters, vol. 44, no. 7, pp. 1196-1199, July 2023.
• J. X. Zheng et al., “Ferroelectric behavior of sputter deposited Al0.72Sc0.28N approaching 5 nm thickness,” Applied Physics Letters, vol. 122, no. 22, p. 222901, Jun. 2023.
• Y. Huo, S. Sofronici, et al., "Low Noise, Strain Modulated, Multiferroic Magnetic Field Sensor Systems," in IEEE Sensors Journal, vol. 23, no. 13, pp. 14025-14040, 1 July1, 2023.
• K.-H. Kim et al., “Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors,” Nature Nanotechnology, vol. 18, no. 9, 2023.

2022 

• R. Beaucejour, M. D’Agati, K. Kalyan, and R. H. Olsson III, "Compensation of the Stress Gradient in Physical Vapor Deposited Al1− xScxN Films for Microelectromechanical Systems with Low Out-of-Plane Bending," Micromachines, vol. 13, no. 8, p. 1169, 2022.

• R. Beaucejour, V. Roebisch, A. Kochhar, C. G. Moe, M. D. Hodge, and R. H. Olsson, "Controlling Residual Stress and Suppression of Anomalous Grains in Aluminum Scandium Nitride Films Grown Directly on Silicon," Journal of Microelectromechanical Systems, 2022.

• M. D’Agati et al., "High-Q Factor Multiferroic Resonant MEMS Low Frequency Magnetic Field Sensors," in 2022 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS), 2022: IEEE, pp. 1-3.

• X. Du, Z. Tang, C. Leblanc, D. Jariwala, and R. H. Olsson, "High-Performance SAW Resonators at 3 GHz Using AlScN on a 4H-SiC Substrate," in 2022 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS), 2022: IEEE, pp. 1-2.

• K.-H. Kim et al., "Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs," arXiv preprint arXiv:2201.02153, 2022.

• X. Liu et al., "Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes," arXiv preprint arXiv:2202.05259, 2022.

• P. Musavigharavi, R. Beaucejour, R. H. Olsson, and E. A. Stach, "Strain-Engineering of Aluminum Scandium Nitride Films Grown Directly on Silicon by Utilizing a Gradient Seed Layer: Application of 4D-STEM Technique," Microscopy and Microanalysis, vol. 28, no. S1, pp. 444-445, 2022.

• Z. Tang, G. Esteves, J. Zheng, and R. H. Olsson, "Vertical and Lateral Etch Survey of Ferroelectric AlN/Al1− xScxN in Aqueous KOH Solutions," Micromachines, vol. 13, no. 7, p. 1066, 2022.

• V. Yoshioka, J. Lu, Z. Tang, J. Jin, R. Olsson III, and B. Zhen, "EnhancedΧ (2) in CMOS-compatible Al 1-x Sc x N thin films," Bulletin of the American Physical Society, 2022.

2021

•  J. X. Zheng et al., "Electrical breakdown strength enhancement in aluminum scandium nitride through a compositionally modulated periodic multilayer structure," Journal of Applied Physics, vol. 130, no. 14, p. 144101, 2021.

• V. Yoshioka, J. Lu, Z. Tang, J. Jin, R. H. OlssonIII, and B. Zhen, "Strongly enhanced second-order optical nonlinearity in CMOS-compatible Al1−xScxN thin films," APL Materials, vol. 9, no. 10, p. 101104, 2021.

•  P. Musavigharavi et al., "Strain Engineering in Aluminum Scandium Nitride Thin Film using Four-dimensional Scanning Transmission Electron Microscopy (4D-STEM) Technique," Microscopy and Microanalysis, vol. 27, no. S1, pp. 2204-2205, 2021.

•  P. Musavigharavi et al., "Nanoscale Structural and Chemical Properties of Ferroelectric Aluminum Scandium Nitride Thin Films," The Journal of Physical Chemistry C, vol. 125, no. 26, pp. 14394-14400, 2021/07/08 2021.

•  X. Liu et al., "Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios," Applied Physics Letters, vol. 118, no. 20, p. 202901, 2021/05/17 2021.

• D. Wang et al., "Sub-Microsecond Polarization Switching in (Al,Sc)N Ferroelectric Capacitors Grown on Complementary Metal–Oxide–Semiconductor-Compatible Aluminum Electrodes," physica status solidi (RRL) – Rapid Research Letters, vol. 15, no. 5, p. 2000575, 2021.

• G. Esteves et al., "Al0.68Sc0.32N Lamb wave resonators with electromechanical coupling coefficients near 10.28%," Applied Physics Letters, vol. 118, no. 17, p. 171902, 2021.

•  X. Liu et al., "Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory," Nano Letters, vol. 21, no. 9, pp. 3753-3761, 2021/05/12 2021.

• Y. Song et al., "Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and Beyond," ACS Applied Materials & Interfaces, vol. 13, no. 16, pp. 19031-19041, 2021/04/28 2021.

• C. R. Kagan, D. P. Arnold, M. G. Allen, and R. H. Olsson, "IoT4Ag: MEMS-Enabled Distributed Sensing, Communications, And Information Systems for The Internet Of Things For Precision Agriculture," in 2021 IEEE 34th International Conference on Micro Electro Mechanical Systems (MEMS), 2021, pp. 350-353. 

2020

•  D. Wang et al., "Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films," IEEE Electron Device Letters, vol. 41, no. 12, pp. 1774-1777, 2020.

• C. Moe et al., "Highly Doped AlScN 3.5 GHz XBAW Resonators with 16% k2eff for 5G RF Filter Applications," in 2020 IEEE International Ultrasonics Symposium (IUS), 2020, pp. 1-4.

• D. Wang et al., "Ferroelectric C-Axis Textured Aluminum Scandium Nitride Thin Films of 100 nm Thickness," in 2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF), 2020, pp. 1-4.

• Z. Tang, M. D. Agati, and R. H. Olsson, "High Coupling Coefficient Resonance Mode in Al<inf>0.68</inf>Sc<inf>0.32</inf>N Surface Acoustic Wave Resonator with AlN Buffer Layer on a Silicon Substrate," in 2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF), 2020, pp. 1-3.

• D. Wang et al., "Ferroelectric C-Axis Textured Aluminum Scandium Nitride Thin Films of 100 nm Thickness," in 2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF), 2020, pp. 1-4.