Research

Si doping in β-Ga2O3 epitaxial films

Controllable Si doping in β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy (PAMBE) has been achieved by utilizing valved effusion cells on (010) and (001) crystal orientations. The film quality was further improved by MOCATAXY.

β-Ga2O3 epitaxial growth on (110)

Epitaxial growth of β-Ga2O3 films on (110) substrate was performed by plasma-assisted molecular beam epitaxy (PAMBE). High crystal quality and smooth surface morphology were confirmed. The growth mechanism of β-Ga2O3 films was also discussed in this study.

InGaN thin-film transistors

First demonstration of InGaN-based thin-film transistors (TFT) for the application of transparent and flexible devices. InGaN-based TFT has enormous potential for high-speed electronics since InN and GaN has very high electron mobilities.

Related patent: JP 6212124, W02015/029435

Related project: JPMJAC1405 Related paper: T. Itoh et al., Sci. Rep. 6, 29500 (2016).

Low-temperature mobility over 10,000

Extremely high low-temperature electron mobility: ~10,000 was achieved by β-Ga2O3 films grown by metal-oxide chemical vapor deposition (MOCVD). This value is comparable to major wide-bandgap semiconductors such as GaN and SiC.