WBG M&D Lab is led by Prof. Chia-Yen Huang, Ph.D. (黃嘉彥博士), which started from Feb. 2021. We are dedicated in the materials characterization, optical design, and processing development of wide bandgap semiconductor devices, especially (Al,In,Ga)N materials. Current Interested topics includes:

  --  Polarization-selective meta-surface design 
  --  Novel visible LED and laser diode (LD) functional light-source
  --  Light-matter interaction and light manipulation with wide bandgap semiconductors. 

1. "Degradation of High-power UVC Light-emitting Diodes via Emission-activated Nitrogen Vacancy Generation", IEEE Trans. Electron. Devices 70, 3166 (2023) (10.1109/TED.2023.3270130 )

2. Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers, J. Appl. Phys. 131, 045702 (2022) (https://doi.org/10.1063/5.0073076 )

3. High-quality AlGaN epitaxy on lattice-engineerable AlN template for high-power UVC light-emitting diodes, Acta Materilia 226, 117625 (2022) (https://doi.org/10.1016/j.actamat.2022.117625 )

4. Challenges and Advancement of Blue III-Nitride Vertical-Cavity Surface-Emitting Lasers. Micromachines 12, 676 (2021) (https://doi.org/10.3390/mi12060676)

5. Efficiency improvement analysis of nano-patterned sapphire substrates and semi-transparent superlattice contact layer in UVC light-emitting diodes, Appl. Phys. Lett. 26, 261102 (2020) (https://doi.org/10.1063/5.0037588)

6. Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates, J. Jpn. Appl. Phys. 59, 070904 (2020) (https://iopscience.iop.org/article/10.35848/1347-4065/ab990a/meta)

7. Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing, ACS Photonics 5, 2724 (2018) (https://doi.org/10.1021/acsphotonics.8b00471)