Wide Bandgap
Materials & Device Lab
Prof. Chia-Yen Huang (黃嘉彥)
Autobiography
Dr. Chia-Yen Huang was born in Taipei, 1985. He obtained a bachelor's degree in Materials from the National Taiwan University (NTU) in 2007 and a doctoral degree in materials from the University of California, Santa Barbara, in 2012. During my Ph.D. career, Dr. Huang achieved the world's first semipolar (20-2-1) laser diode under the supervision of Prof. Shuji Nakamura.
After doctoral degree, Dr. Huang served in Taiwanese LED industry for the R&D of commercial high-power and high efficacy blue LEDs for three years. In 2015~2018, Dr. Huang turned to the National Chiao-Tung University (NCTU) as an assistant researcher for the new light sources in the UV region. In 2018, Dr. Huang joined the Industrial Technology Research Institute (ITRI) to continue the UVC LED epitaxy research with worldwide industrial partners. In 2020, Dr. Huang first demonstrated a 1.6 micrometer-thick n-AlGaN with a high Ga composition (Ga>35%) and low dislocation density (TDD<8E8 cm^-2) with a novel strain-engineering approach, which is regarded to be the key for future high-power and low-voltage UVC LEDs.
In 2021, Dr. Huang returned to NYCU (previously NCTU) as an assistant professor to continue the research of wide bandgap materials and devices. Current interested research topics includes:
-- Visible photonic cystal surface-emitting lasers
-- deep-UV plasmonic and nano-photonics
-- AlN/GaN-based meta-surfaces
ORCiD: 0000-0003-0844-1903
The trace of Prof. Huang's research since Ph.D. career
Address: TKB building Rm. 316B, 1001, Ta Hsueh Rd., Hsinchu, Taiwan Tel: +886-3-5712121 Ext. 56338 Fax: +886-3-5735601