學術發表(Academic Publications)

(I)    Publications

A.   International Journal Papers

1. Yung-Chen Cheng*, Hsiang-Chen Wang, Ho-Chine Lai, Shih-Chen Shi, Chi-Chung Chen, Yu-Feng Yao, and Chih-Chung (C. C.) Yang, "Wide range variation of resonance wavelength of GaZnO plasmonic metamaterials grown by molecular beam epitaxy with slight modification of Zn effusion cell temperatures," Journal of Alloys and Compounds, Vol. 870 pp. 159434-1–159434-5, 2021. (SCI)

2. Shih-Chen Shi, Chih-Chia Wang, Yung-Chen Cheng, and Yue-Feng Lin, “Surface characterization and tribological behavior of graphene‐reinforced cellulose composites prepared by large‐area spray coating on flexible substrate,” Coatings, Vol. 10, No. 12, pp. 1176, 2020 (SCI)

3.  Kuang-I Lin, Shiue-Yuan Shiau, Shu-Bai Liu, Jia-Sian Yan, Jia-De Yan, Doreen Cheng, Han-Ching Chang, Chien-Liang Tu, Yung-Chen Cheng, and Chang-Hsiao Chen, “Fast real-space imaging of the exciton complexes in WSe2 and WS2 monolayers using multiphoton microscopy,” The Journal of Physical Chemistry C, Vol. 124, No. 14, pp. 7979–7987, 2020. (SCI)

4. Chi-Wu Liu, Chi-Chung Chen, Yung-Chen Cheng, Po-Yu Chen, Wen-Yen Chang, Yang Kuo, Yean-Woei Kiang, and C. C. Yang, “Film thickness dependence of surface plasmon resonance behavior at a grating structure of highly Ga-doped ZnO,” Physica Status Solidi (a), Vol. 217, pp. 1–9, 2020. (SCI)

5. Yung-Chen Cheng*, Hsiang-Chen Wang, Shih-Wei Feng, Tsai-Pei Li, Siu-Keung Fung, Kai-Yun Yuan and Miin-Jang Chen, “Co-dosing ozone and deionized water as oxidant precursors of ZnO thin film growth by atomic layer deposition,” Nanoscale Research Letters, Vol. 15 pp. 154-1-154-7, 2020 (SCI)

6. Yu-Feng Yao, Tsai-Pei Li, Yung-Chen Cheng, Wen-Yen Chang, Charng-Gan Tu, Chi-Chung Chen, Yao-Tseng Wang, Wai Fong Tse, Yang Kuo, Yean-Woei Kiang, and Chih-Chung (C. C.) Yang, “Surface plasmon resonance behaviors of a highly Ga-doped ZnO nano-grating” Optical Materials Express, Vol. 9, No. 4, pp. 1826-1841, 2019. (SCI)

7. Hsiang-Chen Wang, Meng-Chu Chen, Yen-Sheng Lin, Ming-Yen Lu, Kuang-I Lin and Yung-Chen Cheng*, “Optimal silicon doping layers of quantum barriers in the growth sequence forming soft confinement potential of eight periods In0.2Ga0.8N/GaN quantum wells of blue LEDs,” Nanoscale Research Letters, Vol. 12 pp. 591-1-591-8, 2017. (SCI)

8. Yung-Chen Cheng*, Kai-Yun Yuan, and Miin-Jang Chen, “Influence of homo-buffer layers and post-deposition rapid thermal annealing upon atomic layer deposition grown ZnO at 100 oC with three-pulsed precursors per growth cycle,” Journal of Crystal Growth, Vol. 75 pp. 39-43, 2017. (SCI)

9.  Hong-Ming Wu, Kuang-I Lin, Yu-Xuan Liu, Hao-Hsiung Lin, and Yung-Chen Cheng, “Partially polycrystalline GaN1−xAsx alloys grown on GaAs in the middle composition range achieving a smaller band gap,” Japanese Journal of Applied Physics, Vol. 56 pp. 081202-1-081202-6, 2017. (SCI)

10. Yu-Sheng Huang, Shih-Wei Feng, Yu-Hsin Weng, Yung-Sheng, Chen, Chie-Tong Kuo, Ming-Yen Lu, Yung-Chen Cheng, Ya-Ping, Hsieh, and Hsiang-Chen Wang, “Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods,” Optical Materials Express, Vol. 7, No. 2, pp.320-328, 2017. (SCI)

11. Yung-Chen Cheng* and Meng-Chu Chen, “The luminescence properties of eight periods In0.2Ga0.8N/GaN multiple quantum wells with silicon doping in the first two to five barriers of blue LEDs,” International Journal of Science and Engineering, Vol. 6, pp.1-8, 2016.

12. Yung-Chen Cheng, Kai-Yun Yuan, and Miin-Jang Chen, “ZnO thin films prepared by atomic layer deposition at various temperatures from 100 to 180 oC with three-pulsed precursors in every growth cycle,” Journal of Alloys and Compounds Vol. 685, pp. 391-394, 2016. (SCI)

13. Chih-Wei Hsu, Hung-Yuan Lin, Jhen-Yu Chen, and Yung-Chen Cheng, “Ultracompact polarization rotator in an asymmetric single dielectric loaded rib waveguide,” Applied Optics, Vol. 55, No. 6, pp. 1395-1400, 2016. (SCI)

14. Kuang-I Lin, Yen-Jen Chen, Bo-Yan Wang, Yung-Chen Cheng, and Chang-Hsiao Chen, “Photoreflectance study of the near-band-edge transitions of chemical vapor deposition grown mono- and few-layer MoS2 films,” Journal of Applied Physics, Vol. 119, No. 11, pp. 115703-1-115703-7, 2016. (SCI)

15. Chih-Wei Hsu, Ting-Kai Chang, Jhen-Yu Chen, and Yung-Chen Cheng, “8.13 μm in length and CMOS compatible polarization beam splitter based on an asymmetrical directional coupler,” Applied Optics, Vol. 55, No. 12, pp. 3313-3318, 2016. (SCI)

16. Meng-Chu Chen, Yung-Chen Cheng*, Chun-Yuan Huang, Hsiang-Chen Wang, Kuang-I Lin, and Zu-Po Yang, " The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs," Journal of Luminescence, Vol. 177, pp. 59–64, 2016. (SCI)

17. Jyh-Shyang Wang, Shih-Chang Tong, Yu-Hsuan Tsai, Wei-jiun Tsai, Chu-Shou Yang, Yi-Hsin Chang, Yung-Chen Cheng, Chih-Hung Wu, Chi-Tsu Yuan, and Ji-Lin Shen, “Growing high-quality CdMnTe epilayers by molecular beam epitaxy on Si substrates and its mechanism,” Journal of Alloys and Compounds, Vol. 646, pp.129–134, 2015. (SCI)

18. Kuang-I Lin, Yen-Jen Chen, Yung-Chen Cheng, and Shangjr Gwo, “Investigation of valence-band splitting in InN by low-temperature photoreflectance spectroscopy,” Japanese Journal of Applied Physics, Vol. 54, pp. 031001-1-031001-6, 2015. (SCI)

19. Chih-Yen Chen, Wen-Ming Chang, Wei-Lun Chung, Chieh Hsieh, Che-Hao Liao, Shao-Ying Ting, Kuan-Yu Chen, Yean-Woei Kiang, C. C. Yang, Wei-Siang Su, and Yung-Chen Cheng, “Crack-free GaN deposition on Si substrate with temperatue-graded AlN buffer growth and the emission characteristics of overgrown InGaN/GaN quantum wells,” Journal of Crystal Growth, Vol. 396, pp. 1-6, 2014. (SCI)

20. Yung-Sheng Chen, Che-Hao Liao, Yung-Chen Cheng, Chie-Tong Kuo, and Hsiang-Chen Wang, “Nanostructure study of the coalescence growth of GaN columns with molecular beam epitaxy,” Optical Materials Express, Vol. 3, No. 9, pp. 1450–1458, 2013. (SCI)

21. Yung-Chen Cheng*, “Effects of post-deposition rapid thermal annealing on aluminum-doped ZnO thin films grown by atomic layer deposition,” Applied Surface Science, Vol. 258, pp. 604-607, 2011. (SCI)

22. Yung-Chen Cheng, Ying-Shen Kuo , Yun-Hsiu Li , Jing-Jong Shyue, and Miin-Jang Chen, “Stable p-type ZnO films grown by atomic layer deposition on GaAs substrates and treated by post-deposition rapid thermal annealing,” Thin Solid Films, Vol. 519, pp. 5558-5561, 2011. (SCI)

23. Yung-Chen Cheng, Chi-Yuan Sun, Edward Sun, and Miin-Jang Chen, “Enhanced photoluminescence from condensed electron-hole pairs in trenched Si,” Journal of Applied Physics, Vol. 108, No. 12, pp. 124305-1-124305-4, 2010. (SCI)

24. H. C. Chen, M. J. Chen, Y. C. Cheng, J. R. Yang, and M. Shiojiri, “Amplified spontaneous emission from ZnO in n-ZnO/p-GaN heterojunction light-emitting diodes with an external-feedback reflector,” IEEE Photonics Technology Letters, Vol. 22, No. 4, pp. 248-250, 2010. (SCI )

25. Y. T. Shih, M. K. Wu, M. J. Chen, Y. C. Cheng, J. R. Yang, and M. Shiojiri, “ZnO-based heterojunction light-emitting diodes on p-SiC(4H) grown by atomic layer deposition,” Applied Physics B - Lasers and Optics, Vol. 98, pp. 767-772, 2010. (SCI)

26. Hsing-Chao Chen, Miin-Jang Chen, Mong-Kai Wu, Yung-Chen Cheng, Member, IEEE, and Feng-Yu Tsai, “Low-threshold stimulated emission in ZnO thin films grown by atomic layer deposition,” IEEE Journal of Selected Topics in Quantum Electronics, Vol. 14, No. 4, pp. 1053-1057, 2008. (SCI)

27. Yen-Cheng Lu, Cheng-Yen Chen, Hsiang-Chen Wang, C. C. Yang, and Yung-Chen Cheng, “Carrier trapping effects on photoluminescence decay time in InGaN/GaN quantum wells with nano-cluster structures,” Journal of Applied Physics, Vol. 101, No. 6, pp. 063511-1-063511-7, 2007. (SCI)

28. Y. C. Cheng, S. W. Feng, C. C. Yang, C. T. Kuo, J. S. Tsang, S. Jursenas, S. Miasojedovas, and A. Zukauskas, “Effect of annealing on optical properties of InGaN /GaN multiple quantum wells,” Lithuanian Journal of Physics, Vol. 46, No. 3, pp. 311-319, 2006. (SCI)

29. Chih-Chung Teng, Hsiang-Chen Wang, Tsung-Yi Tang, Yen-Cheng Lu, Yung-Chen Cheng, C. C. Yang, Kung-Jen Ma, Wei-Ming Wang, Chi-Wei Hsu, and L. C. Chen, “Depth dependence of optical property beyond the critical thickness of an InGaN film,” Journal of Crystal Growth, Vol. 288, pp. 18-22, 2006. (SCI)

30. Yung-Chen Cheng, Cheng-Ming Wu, C. C. Yang, Gang Alan Li, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, and L. C. Chen, “Effects of interfacial layers in InGaN/GaN quantum well structures on their optical and nanostructure properties,” Journal of Applied Physics, Vol. 98, No.1, pp. 014317-1-014317-7, 2005. (SCI)

31. Meng-Ku Chen, Yung-Chen Cheng, Jiun-Yang Chen, Cheng-Ming Wu, C. C. Yang, Kung-Jen Ma, Jer-Ren Yang, and Andreas Rosenauer, “Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells,” Journal of Crystal Growth, Vol. 279/1-2, pp. 55-64, 2005. (SCI)

32. A. Žukauskas, K. Kazlauskas, G. Tamulaitis, J. Mickevičius, S. Juršėnas, G. Kurilčik, S. Miasojedovas, M. Springis, I. Tale, Yung-Chen Cheng, Hsiang-Chen Wang, Chi-Feng Huang, and C. C. Yang, “Carrier localization effects in polarized InGaN multiple quantum wells,” Physica Status Solidi (c), Vol. 2, No. 7, pp. 2753–2756, 2005. (EI)

33. K. Kazlauskas, G. Tamulatis, P. Pobedinskas, A. Žukauskas, Chi-Feng Huang, Yung-Chen Cheng, Hsiang-Chen Wang, and C. C. Yang, “Photoluminescence temperature behavior and Monte Carlo simulations of exciton hopping in InGaN multiple quantum wells,” Physica Status Solidi (c), Vol. 2, No. 7, pp. 2809–2812, 2005. (EI)

34. K. Kazlauskas, G. Tamulatis, S. Juršėnas, A. Žukauskas, M. Springis, Yung-Chen Cheng, Hsiang-Chen Wang, Chi-Feng Huang, and C. C. Yang, “Monte Carlo simulation approach for a quantitative characterization of the band edge in InGaN quantum wells,” Physica Status Solidi (c), Vol. 2, No. 3, pp. 1023–1026, 2005. (EI)

35. K. Kazlauskas, G. Tamulaitis, P. Pobedinskas, A. Žukauskas, M. Springis, Chi-Feng Huang, Yung-Chen Cheng, and C. C. Yang, “Exciton hopping in InGaN multiple quantum wells”, Physical Review B, Vol. 71, No. 8, pp. 085306-1-085306-5, 2005. (SCI)

36. K. Kazlauskas, G. Tamulaitis, J. Mickevičius, E. Kuokštis, A. Žukauskas, Yung-Chen Cheng, Hsiang-Cheng Wang, Chi-Feng Huang, and C. C. Yang, “Excitation power dynamics of photoluminescence in InGaN/GaN quantum wells with enhanced carrier localization,” Journal of Applied Physics, Vol. 97, No. 1, pp.013525-013531, 2004. (SCI)

37. Hsiang-Chen Wang, Shih-Jiun Lin, Yen-Cheng Lu, Yung-Chen Cheng, C. C. Yang, and Kung-Jen Ma, “Carrier relaxation in InGaN/GaN quantum wells with nm-scale cluster structures”, Applied Physics Letters, Vol. 85, No. 8, pp. 1371-1373, 2004. (SCI)

38. Yung-Chen Cheng, Cheng-Ming Wu, Meng-Ku Chen, C. C. Yang, Zhe-Chuan Feng, Gang Alan Li, Jer-Ren Yang, Andreas Rosenauer, and Kung-Jen Ma, “Improvements of InGaN/GaN quantum well interfaces and radiative efficiency with InN interfacial layers,” Applied Physics Letters, Vol. 84, No. 26, pp. 5422-5424, 2004. (SCI)

39. Yung-Chen Cheng, En-Chiang Lin, Cheng-Ming Wu, C. C. Yang, Jer-Ren Yang, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, L. C. Chen, Chang-Chi Pan and Jen-Inn Chyi, “Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions,” Applied Physics Letters, Vol. 84, No. 14, pp. 2506-2508, 2004. (SCI)

40. Yung-Chen Cheng, S. Jursenas, Shih-Wei Feng, C. C. Yang, Cheng-Ta Kuo, and Jian-Shihn Tsang, “Impact of post-growth thermal annealing on emission of InGaN/GaN Multiple Quantum Wells,” Physica Status Solidi A, Vol. 201, No. 2, pp. 221-224, 2004. (SCI)

41. Yi-Yin Chung, Yen-Sheng Lin, Shih-Wei Feng, Yung-Chen Cheng, En-Chiang Lin, C. C. Yang, Kung-Jen Ma, Hui-Wen Chuang, Cheng-Ta Kuo and Jian-Shihn Tsang, “Quantum well width dependencies of post-growth thermal annealing effects of InGaN/GaN Quantum Wells,” Journal of Applied Physics, Vol. 93, No. 12, pp. 9693-9696, 2003. (SCI)

42. Yung-Chen Cheng, Chern-Hua Tseng, Chen Hsu, Kung-Jen Ma, Shih-Wei Feng, En-Chiang Lin, C. C. Yang and Jenn-Inn Chyi, “Mechanisms for photon emission enhancement with silicon doping in InGaN/GaN quantum well structures,” Journal of Electronic Materials, Vol. 32, No. 5, pp. 375-381, 2003. (SCI)

43. S. Juršėnas, S. Miasojedovas, G. Kurilčik, A. Žukauskas, Shih-Wei Feng, Yung-Chen Cheng, C. C. Yang, Cheng-Ta Kuo, and Jian-Shihn Tsang, “Quantum-well thickness dependence of stimulated emission in InGaN/GaN structures”, Physica Status Solidi (c), Vol. 0, No. 7, pp. 2610-2613, 2003. (EI)

44. Yung-Chen Cheng, En-Chiang Lin, Shih-Wei Feng, Hsiang-Chen Wang, C. C. Yang, Kung-Jen Ma, Chang-Chi Pan, and Jen-Inn Chyi, “Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions”, Physica Status Solidi (c), Vol. 0, No. 7, pp. 2670-2673, 2003. (EI)

45. Yung-Chen Cheng, Shih-Wei Feng, En-Chiang Lin, C. C. Yang, Cheng-Hua Tseng, Chen Hsu and Kung-Jeng Ma, “Quantum dot formation in InGaN/GaN quantum well structures with silicon doping and its implication in the mechanisms of radiative efficiency improvement,” Physica Status Solidi (c), Vol. 0, No. 4, pp. 1093-1096, 2003. (EI)

46. Yung Chen Cheng, Cheng Hua Tseng, Chen Hsu, Kung Jen Ma, Shih Wei Feng, En Chiang Lin, Chih Chung Yang, Jen Inn Chyi, “Quantum dot formation with silicon doping in InGaN/GaN quantum well structures and its implications in radiative mechanisms,” Proceedings of SPIE, Vol. 4999, pp. 518-523, 2003. (EI)

47. Shih-Wei Feng, En-Chiang Lin, Tsung-Yi Tang, Yung-Chen Cheng, Hsiang-Chen Wang, C. C. Yang, Kung-Jen Ma, Ching-Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin and H. X. Jiang, “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,” Applied Physics Letters, Vol. 83, No. 19, pp. 3906-3908, 2003. (SCI)

48. Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin, Chung, C. C. Yang, Kung-Jeng Ma, Chih Chiang Yan, Chen Hsu, J. Y. Lin and H. X. Jiang, “Strong green luminescence in quaternary InAlGaN thin films,” Applied Physics Letters, Vol. 82, No. 9, pp. 1377-1379, 2003. (SCI)

49. Shih-Wei Feng, Yung-Chen Cheng, En-Chiang Lin, Hsiang-Chen Wang, C. C. Yang, Kung Jen Ma, Ching-Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “ Thermal annealing effects on the optical properties of high-indium InGaN epi-layers,” Physica Status Solidi (c), Vol. 0, No. 7, pp.2654-2657, 2003. (EI)

50. Yen-Sheng Lin, Chih-Chiang Yan, Cheng Hsu, Kung-Jen Ma, Yi-Yin Chung, Shih-Wei Feng, Yung-Chen Cheng, En-Chiang Lin, C. C. Yang, Cheng-Ta Kuo, and Jian-Shihn Tsang, “A microstructure study of post-growth thermally annealed InGaN/GaN quantum well structures of various well widths,” Journal of Crystal Growth, Vol. 252, pp. 107-122, 2003. (SCI)

51. Yi-Yin Chung, Shih-Wei Feng, Yung-Chen Cheng, C. C. Yang, Yen-Sheng Lin, Kung-Jeng Ma, Hui-Wen Chuang, Cheng-TaKuo, and Jian-Shihn Tsang, “Optical and material characteristics of InGaN/GaN quantum well structures with embedded quantum dots,” Proceedings of SPIE, Vol. 4913, pp. 107-110, 2002. (EI)

52. Yen-Sheng Lin, Kung-Jen Ma, Cheng Hsu, Yi-Yin Chung, Chih-Wen Liu, Shih-Wei Feng, Yung-Chen Cheng, C. C. Yang, Hui-Wen Chuang, Cheng-Ta Kuo, Jian-Shihn Tsang, Thomas E. Weirich and Joachim Mayer, “Formation of quantum dots with post-growth thermal annealing of InGaN/GaN quantum wells,” Proceedings of SPIE, Vol. 4913, pp. 103-106, 2002. (invited) (EI)

53. Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, C. C. Yang, Yen-Sheng Lin, Chen Hsu, Kung-Jeng Ma and Jen-Inn Chyi, “Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures,” Journal of Applied Physics, Vol. 92, No. 8, pp. 4441-4448, 2002. (SCI)

54. Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, C. C. Yang, Ming-Hua Mao, Yen-Sheng Lin and Kung-Jeng Ma, and Jen-Inn Chyi, ”Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures,” Applied Physics Letters, Vol. 80, No. 23, pp. 4375-4377, 2002. (SCI)

55. Shih-Wei Feng, Chin-Yi Tsai, Yung-Chen Cheng, Chi-Chih Liao, C. C. Yang, Yen-Sheng Lin, Kung-Jeng Ma, and Jen-Inn Chyi, “Phonon–replica transitions in InGaNGaN quantum well structures, ”Optical and Quantum Electronics, Vol. 34, No. 12, pp. 1213-1218, December 2002. (SCI)

56. Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, Chih-Wen Liu,Ming-Hua Mao, C. C. Yang, Yen-Sheng Lin, Kung-Jeng Ma, and Jen-Inn Chyi, “Dynamics carrier relaxation in InGaN/GaN multiple quantum well structures,” Proceedings of SPIE, Vol. 4643, pp. 169-172, 2002. (EI)

57. Yen-Sheng Lin, Kung-Jen Ma, Cheng Hsu, Yi-Yin Chung, Chih-Wen Liu, Shih-Wei Feng, Yung Chen Cheng, Ming-Hua Mao, C. C. Yang, Hui-Wen Chuang, Cheng-ta Kuo, Jian-Shihn Tsang, and Thomas E. Weirich, “Quasi-regular quantum-dot-like structure formation with post-growth thermal annealing in InGaN/GaN quantum wells,” Applied Physics Letters, Vol. 80, No. 14, pp. 2571-2573, 2002. (SCI)

58. Shih-Wei Feng, Yung-Chen Cheng, Chi-Chih Liao, Yi-Yin Chung, Chih-Wen Liu, C. C. Yang, Yen-Sheng Lin, Kung-Jeng Ma, and Jen Inn Chyi, “Two-component photoluminescence decay in InGaN/GaN multiple quantum well Structures,” Physica Status Solidi (b), Vol. 228, No. 1, pp. 121-124, 2001. (SCI)

59. Yung-Chen Cheng, Chi-Chih Liao, Shih-Wei Feng, C. C. Yang, Yen-Sheng Lin, Kung-Jeng Ma, and Jen-Inn Chyi, “Activation of p-type GaN with irradiation of the second-harmonics of a Q-switched Nd:YAG Laser,” Physica Status Solidi (b), Vol. 228, No. 2, pp. 357-360, 2001. (SCI)

60. Yung-Chen Cheng, Chi-Chih Liao, Shih-Wei Feng, C. C. Yang, Yen-Sheng Lin, Kung-Jeng Ma, Chang-Cheng Chuo, Chia-Ming Lee, and Jen-Inn Chyi, “Laser-induced activation of p-Type GaN with the second harmonics of a NdYAG Laser,” Japanese Journal of Applied Physics, Vol. 40, Part 1, No. 4A, pp. 2143-2145, 2001. (SCI)

61. Chih Chung Yang, Shih-Wei Feng, Yen-Sheng Lin, Yung-Chen Cheng, Chi-Chih Liao, Kung-Jeng Ma, and Jen-Inn Chyi, “Indium segregation in InGaN/GaN quantum well structures,” Proceedings of SPIE, Vol. 4280, pp. 20-26, 2001. (invited) (EI)

62. Yen-Sheng Lin, Kung-Jen Ma, C. Hsu, Shih-Wei Feng, Yung-Chen Cheng, Chi-Chih Liao, C. C. Yang, Chang-Cheng Chuo, Chia-Ming Lee, and Jen-Inn Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Applied Physics Letters, Vol. 77, No. 19, pp. 2988-2990, 2000. (SCI)

63. W. C. Hwang, Y. J. Cheng (Yung-Chen Cheng), Y. C. Wang, and J. S. Hwang “Electroreflectance and photoreflectance studies of surface Fermi level and surface densities of InP SIN+ structures,” Journal of Vacuum Science & Technology B, Vol. 18, pp.1967-1972, 2000. (SCI)

B.   International Conference Papers

1. Yu-Feng Yao, Keng-Ping Chou, Chi-Chung Chen, Charng-Gan Tu, Tsai-Pei Li, Yung-Chen Cheng, Wen-Yen Chang, Yao-Tseng Wang, Wai Fong Tse, Yean-Woei Kiang, and Chih-Chung (C. C.) Yang,”Crystal Structures and Surface Plasmon Properties of GaZnO Nanostructures, “ Compound Semiconductor Week (CSW) (2019) Nara, Japan, May 19-23, 2019.

2. Yu-Feng Yao, Tsai-Pei Li, Yung-Chen Cheng, Chi-Chung Chen, and C. C. Yang, “Dependencies of the Dielectric Constant and Surface Plasmon Behavior of GaZnO on Its Growth Condition,” The 10th International Workshop on Zinc Oxide and Related Materials（IWZnO 2018）Warsaw, Poland, September 11-September14, 2018.

3. Yung-Chen Cheng, Kai-Yun Yuan, and Miin-Jang Chen, “High Quality ZnO Epilayers Prepared at 100 oC with Three-Pulsed Precursors in Each Growth Cycle on Homo-Buffer Layers by Atomic Layer Deposition and Post-Deposition Rapid Thermal Annealing,” The 9th International Workshop on Zinc Oxide and Related Materials（IWZnO 2016）Taipei, Taiwan, October 30-Novemver 2, 2016.

4. Yung-Chen Cheng, Kai-Yun Yuan, and Miin-Jang Chen, “ZnO Epilayers Prepared by Atomic Layer Deposition at Various Temperatures from 100 to 180 oC with Three Pulsed Precursors in Each Growth Cycle,” The 9th International Workshop on Zinc Oxide and Related Materials（IWZnO 2016）Taipei, Taiwan, October 30-Novemver 2, 2016.

5. Yung-Chen Cheng “Effects of post-deposition rapid thermal annealing on ZnO:Al and ZnO:As thin films grown by atomic layer deposition,” Light Conference: International Conference on Micro/Nano Optical Engineering - Taiwan (Light Conference: ICOME-T2015), Tainan, Taiwan, August 10-14, 2015.

6. H. C. Chen, M. J. Chen, M. K. Wu, Y. C. Cheng, and F.Y. Tsai, “Stimulated Emission from ZnO Thin Films grown by Atomic Layer Deposition,” LEOS Annual 2007, 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2007, Lake Buena Vista, Florida, USA, October 21st- 25th, 2007.

7. Yung-Chen Cheng, Meng-Ku Chen, En-Chiang Lin, Cheng-Ming Wu, and C. C. Yang, Jer-Ren Yang, Kung-Jen Ma, Shih-Chen Shi and L. C. Chen, “Optical Behaviors of Quantum Dots in InGaN/GaN Quantum-well Structures of Different Silicon Doping Conditions,” Asia-Pacific Optical and Wireless Communications Conference and Exhibit, Beijing, China, November 2004.

8. Yung-Chen Cheng, Hsiang-Chen Wang, Yen-Cheng Lu, Meng-Ku Chen, Jiun-Yang Chen, Cheng-Ming Wu, Chih-Chung Teng, Shih-Chun Lin, and C. C. Yang, “Quantum-dot-like InGaN Nanostructures and Their Optical Characteristics,” The Second International Workshop on Nano-physics and Nano-technology, Hanoi, Vietnam, October 22-23, 2004. (invited)

9. Yung-Chen Cheng, Meng-Kuo Chen, Cheng-Ming Wu, C. C. Yang, Jer-Ren Yang, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, L. C. Chen, Chang-Chi Pan and Jen-Inn Chyi, “Differences in nanostructure and carrier localization behavior of InGaN/GaN quantum-well structures with different silicon-doping conditions,” International Workshop of Nitride Semiconductors (IWN-2004), Pittsburgh, USA, July 19-23, 2004.

10. Yung-Chen Cheng, Cheng-Ming Wu, C. C. Yang, Zhe-Chuan Feng, Gang Alan Li, Andreas Rosenauer, and Kung-Jen Ma, “Improvements of InGaN/GaN quantum well quality and radiative efficiency with InN interfacial layers,” International Workshop of Nitride Semiconductors (IWN-2004), Pittsburgh, USA, July 19-23, 2004.

11. Yung-Chen Cheng, En-Chiang Lin, Meng-Kuo Chen, Cheng-Ming Wu, C. C. Yang, and Kung-Jen Ma, “Optimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devices,” Conference on Lasers and Electro-Optics (CLEO), San Franscisco, USA, May, 2004.

12. Yung-Chen Cheng, Horng-Shyang Chen, C. C. Yang, Z. C. Feng, and Gang Alan Li, “Effects of interface thin layers in InGaN/GaN quantum well structures,” The Fifth International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004), Gyeongju, Korea, March 15-19, 2004.

13. Yung-Chen Cheng, En-Chiang Lin, C. C. Yang, Jer-Ren Yang, Andreas Rosenauer, Kung-Jen Ma, Chang-Chi Pan, and Jen-Inn Chyi, “Mechanisms of emission enhancement with silicon doping in InGaN/GaN quantum wells,” The Fifth International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004), Gyeongju, Korea, March 15-19, 2004.

14. Yung-Chen Cheng, En-Chiang Lin, C. C. Yang, Jer-Ren Yang, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, and L. C. Chen, “Quantum dot structures in silicon-doped InGaN/GaN quantum wells,” 2004 Nano Materials for Defense Applications Symposium & US/Taiwan Workshop, Maui, Hawaii, USA, February 19-26, 2004.

15. Yung-Chen Cheng, En-Chiang Lin, Shih-Wei Feng, Hsiang-Chen Wang, and C. C. Yang, Kung-Jen Ma, Shih-Chen Shi and L. C. Chen, Chang-Chi Pan and Jen-Inn Chyi, “Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping,” The Fifth Pacific Rim Conference on Lasers and Electro-Optics (CLEO/PR), Taipei, Taiwan, December 15-19, 2003.

16. Yung-Chen Cheng, Shih-Wei Feng, Tsung-Yi Tang, Yen-Cheng Lu, Chi-Feng Huang, En-Chiang Lin, Shih-Jiun Lin, Chih-Chung Deng, Cheng-Ming Wu, Meng-Kuo Chen, Jiun-Yang Chen, and C. C. Yang, “Self-organized InGaN Quantum Dots,” JAPAN-TAIWAN Joint Seminar: Toward Formation New Network Between Physics and Chemistry on the Frontiers of Material Science, Taipei, Taiwan, Dec. 5-7, 2003. (invited)

17. Yung-Chen Cheng, En-Chiang Lin, Hsiang-Chen Wang, C. C. Yang, Kung-Jen Ma, Chang-Chi Pan and Jen-Inn Chyi, “Gain characteristics of InGaN/GaN quantum well structures with various silicon doping conditions,” Material Research Society’s 2003 Fall Meeting, Boston, USA, Dec. 1-5, 2003.

18. Yung-Chen Cheng, Shih-Wei Feng, Tsung-Yi Tang, Yen-Cheng Lu, Chi-Feng Huang, En-Chiang Lin, Shih-Jiun Lin, Chih-Chung Deng, Cheng-Ming Wu, Meng-Kuo Chen, Jiun-Yang Chen, and C. C. Yang, “Optical and material properties of self-organized InGaN quantum dots,” Japan-Taiwan Optoelectronics Workshop, Tainan, Taiwan, Nov. 19-20, 2003. (invited)

19. Yung-Chen Cheng, En-Chiang Lin, Shih-Wei Feng, Hsiang-Chen Wang, C. C. Yang, Kung-Jen Ma, Shih-Chen Shi, L. C. Chen, Chang-Chi Pan and Jen-Inn Chyi, “Effects of post-growth thermal annealing of InGaN/GaN QWs with silicon doping,” The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May. 25-30, 2003.

20. Yung-Chen Cheng, Cheng-Hua Tseng, Chen Hsu, Shih-Wei Feng, Yi-Yin Chung, En-Chiang Lin, C. C. Yang, Kung-Jen Ma and Yen-Sheng Lin, “Quantum dot formation with silicon doping in InGaN/GaN quantum well Structures and its implications in radiative mechanisms,” Photonics West, San Jose, USA, Jan. 25-31 2003.

21. Yung-Chen Cheng, Shih-Wei Feng, Yi-Yin Chung, C. C. Yang, Cherng-Hua Tseng, Chen Hsu, Yen-Sheng Lin, Kung-Jeng Ma and Jen-Inn Chyi, “Optical and material characteristics of InGaN/GaN quantum well structures with various silicon doping conditions,” International Workshop on Nitride Semiconductors (IWN-2002), Aachen, Germany, July 22–25, 2002.

22. Yung-Chen Cheng, Chi-Chih Liao, Shih-Wei Feng, C. C. Yang, Yen-Sheng Lin, Kung-Jeng Ma, and Jen-Inn Chyi, “Activation of p-type GaN with irradiation of the second-harmonics of a Q-switched Nd:YAG laser,” The Fourth International Conference on Nitride Semiconductors (ICNS-4), Denvor, July 16-20, 2001.

23. Yung-Chen Cheng, Yi-Yin Chung, Shih-Wei Feng, C. C. Yang, Cheng-Hua Tseng, Chen Hsu, Kung-Jeng Ma, and Jen-Inn Chyi, “Carrier confinement and piezoelectric field of InGaN/GaN multiple quantum wells with silicon doping,” Optics and Photonics Taiwan 2002, Taipei, Taiwan, Dec. 12-13, 2002.

24. Y. C. Cheng, C. C. Liao, S. W. Feng, C. C. Yang, Y. S. Lin, K. J. Ma, C. C. Chou, C. M. Lee, and J. I. Chyi, “Activation of p-type GaN with irradiation of 532-nm Laser,” International Photonics Conference 2000, Hsinchu, Taiwan, Dec. 12-15, 2000.

C    Domestic Journal Papers

1.    鄭永楨 (Yung-Chen Cheng), “矽摻雜與介面層對氮化銦鎵／氮化鎵量子井光電特性及奈米結構之影響 (Influences of Silicon-doping and Interfacial Layers on the Optical Characteristics and Nanostructures of InGaN/GaN Quantum Wells)” 光學工程89期(2005.3)頁碼：34-42 (博士論文獎)

D.   Domestic Conference Papers

1. Pai-Sheng Chien, Shu-Bai Liu, Po-Wen Chiu, Yung-Chen Cheng, Chang-Hsiao Chen, Kuang-I Lin, “Imaging technology to avoid photo-induced oxidation of monolayer WS2 - multiphoton microscopy,” The Physical Society of Taiwan 2020-Annual Symposium (臺灣物理學會2020年會) 2020/2/5-7國立屏東大學

2.  何秉維，賴和謙，鄭永楨，姚毓峰，陳麒仲，楊志忠“橢圓偏振光譜儀量測氧化鎵鋅電漿薄膜電特性與霍爾效應量測的比較” 108年中國材料科學學會年會(Annual Conference of Materials Research Society-Taiwan) 2019/11/15-16國立成功大學

3. Ren Shuo Liu, Han Ching Chang, Chien Liang Tu, Yishu Meng, Yung Chen Cheng, Chang Hsiao Chen, Kuang I Lin, “Exciton-Complexes in WS2 and WSe2 Monolayers at Room Temperature and the Phase Features of New-Generation 2D InSe,” The Physical Society of Taiwan 2019-Annual Symposium (臺灣物理學會2019年會) 2019/01/23-25, National Chiao Tung University 國立交通大學 (壁報論文佳作獎)

4. Chieh-Chi Yang, Shu-Bai Liu, Han-Ching Chang, Yi-Shu Meng, Yung-Chen Cheng, Chang-Hsiao Chen, Kuang-I Lin, “Spatial Distribution Revealing of Exciton-Complex and Edge States on Monolayer Transition Metal Dichalcogenides by Second-Harmonic Generation,” The Physical Society of Taiwan 2019-Annual Symposium (臺灣物理學會2019年會) 2019/01/23-25, National Chiao Tung University 國立交通大學

5. Yung-Chen Cheng, Tsai-Pei Li, Yu-Feng Yao, Chi-Chung Chen, and C. C. Yang, “Plasmonic Properties of GaxZn1-xO Thin Films Grown by Molecular Beam Epitaxy” Taiwan Vacuum Society (TVS) 2018-Annual Symposium (臺灣真空學會2018年會) 2018/11/2國立中正大學

6. Yung-Chen Cheng, Tsai-Pei Li, Kai-Yun Yuan, and Miin-Jang Chen, “Effect of Ozone Precursors and Thermal Annealing on the Atomic Layer Deposition Grown ZnO Thin Films” Taiwan Vacuum Society (TVS) 2018-Annual Symposium 2018/11/2 (臺灣真空學會2018年會) 國立中正大學

7. 賴和謙，李采蓓，鄭永楨，姚毓峰，陳麒仲，楊志忠“分子束磊晶成長氧化鎵鋅薄膜電漿特性分析” 107年中國材料科學學會年會(Annual Conference of Materials Research Society-Taiwan) 2018/11/16-17 逢甲大學

8. 賴和謙，李采蓓，鄭永楨，姚毓峰，陳麒仲，楊志忠“具電漿特性之氧化鎵鋅薄膜材料與光電特性分析"臺灣鍍膜科技協會2018年會 (Taiwan Association for Coating and Thin Film Technology, TACT 2014-Annual Symposium) 2018/10/12-13 明志科技大學

9. Jia-De Yan, Chien-Liang Tu, Chang-Hsiao Chen, Yung-Chen Cheng, Kuang-I Lin, “Rapid and Large-Area Characterization of WSe₂ Monolayers Using Multiphoton Microscopy at Exciton Resonances,” The Physical Society of Taiwan 2018-Annual Symposium (臺灣物理學會2018年會) 2018/1/24-26國立臺灣大學

10. Jia-Sian Yan, Yen-Hung Ho, Han-Ching Chang, Chang-Hsiao Chen, Yung-Chen Cheng, Kuang-I Lin, “Effect of Atomic-Edge Terminations on Second-Harmonic Generation in Monolayer MoS₂,” The Physical Society of Taiwan 2018-Annual Symposium (臺灣物理學會2018年會) 2018/1/24-26國立臺灣大學 (壁報論文佳作獎)

11. 李采蓓，鄭永楨，袁開昀，陳敏璋 “臭氧前驅物脈衝注入次數與氧環境下退火對原子層沉積氧化鋅薄膜於藍寶石基板性質影響” 臺灣真空學會2017年會 (Taiwan Vacuum Society (TVS) 2017-Annual Symposium) 2017/10/27國立成功大學

12. 林靜芬，鄭永楨，李昀修，陳敏璋 “熱擴散及快速熱退火製備高品質 p 型氧化鋅薄膜於砷化鎵基板” 臺灣真空學會2017年會(Taiwan Vacuum Society (TVS) 2017-Annual Symposium) 2017/10/27國立成功大學

13. 劉宇軒，吳宏明，鄭永楨，林浩雄，林光儀 “Partially Polycrystalline GaN1−xAsx Alloys Grown on GaAs in the Middle Composition Range” 中華民國(臺灣)物理學會2017年會(The Physical Society of Taiwan 2017-Annual Symposium) 2017/1/16-18淡江大學

14. 黃宇晟，馮世維，鄭永楨，王祥辰 “以氮化鎵奈米柱半極性面分析氮化銦鎵/氮化鎵雙層量子井的奈米結構” 臺灣真空學會2016年會 (Taiwan Vacuum Society (TVS) 2016-Annual Symposium) 國立清華大學 (口頭論文優等獎)

15. Yu-Xuan Liu, A. V. Katkov, Chien Kun Wang, Hong-Ming Wu, Bo-Ting Huang, Jim-Yong Chi, Hao-Hsiung Lin, Yung-Chen Cheng, and Kuang-I Lin, “Fully tuning the electronic band structures of (In)GaAsN(Sb) alloys with low and high nitrogen contents” 中華民國(臺灣)物理學會2016年會(The Physical Society of Taiwan 2016-Annual Symposium) 2016/1/25-27國立中山大學

16. Yen-Jen Chen, Kuang-I Lin, Shao-Sian Li, Chun-Wei Chen, Yung-Chen Cheng, “Photoreflectance study of surface Fermi level and open-circuit voltage of graphene/GaAs Schottky junctions” 中華民國(臺灣)物理學會2015年會(The Physical Society of Taiwan 2015- Annual Symposium) 2015/1/28-30國立清華大學

17. Bo-Yan Wang, Yen-Jen Chen, Kuang-I Lin, Chang-Hsiao Chen, and Yung-Chen Cheng, “Investigation of the excitonic transitions of CVD-grown single- and few-layer MoS2 using photoreflectance” 中華民國(臺灣)物理學會2015年會(The Physical Society of Taiwan 2015-Annual Symposium) 2015/1/28-30國立清華大學 (壁報論文優良獎)

18. 王博彥，鄭永楨，蔡育軒，王智祥 “加入錳原子對碲化鎘薄膜成長在矽(111)基板的影響” 臺灣鍍膜科技協會2014年會 (Taiwan Association for Coating and Thin Film Technology, TACT 2014-Annual Symposium) 2014/10/17-18國立聯合大學

19. 王博彥，鄭永楨，陳孟炬 “氮化銦鎵/氮化鎵多重量子井矽摻雜位壘最佳條件” 臺灣鍍膜科技協會2014年會 (Taiwan Association for Coating and Thin Film Technology, TACT 2014-Annual Symposium) 2014/10/17-18國立聯合大學

20. 吳宗憲，鄭永楨 “高摻雜效應在原子層沉積成長鋁摻雜氧化鋅之研究” 2012年電子工程技術研討會(Electronic Technology Symposium) 2012/6/1義守大學

21. 蘇暐翔，鄭永楨 “有效降低氮化鎵成長於矽基板上的裂紋” 2012年電子工程技術研討會(Electronic Technology Symposium) 2012/6/1義守大學

22. 粘益維，鄭永禎 “原子層沉積成長高鎂含量的氧化鎂鋅薄膜性質” 2012年電子工程技術研討會(Electronic Technology Symposium) 2012/6/1義守大學

23. 黃珮怡，鄭永楨 “以光調制光譜、光激發光譜及拉曼光譜研究摻雜砷氧化鋅薄膜的特性＂中華民國(臺灣)物理學會2010年會(The Physical Society of Taiwan-Annual Symposium) 2010/2/2-2/4國立成功大學

24. 林倉名，鄭永楨 “Optical characteristics of the surface of bulk ZnO and interface of Al2O3/ZnO by photoreflectance” 中華民國(臺灣)物理學會2009年會(The Physical Society of Taiwan-Annual Symposium) 2009/1/19-1/21國立彰化師範大學

E.   Book Chapter (專書章節)

1. Yung-Chen Cheng, Cheng-Yen Chen, and C. C. Yang, “Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-well Structures with Silicon Doping,” III-NITRIDE SEMICONDUCTOR MATERIALS, edited by Z. C. Feng, Imperia College Press (ICP), ISBN 1-86094-636-4, Pub. date: Mar 2006.