研究 Research

Recent Research Topics

Rowhammer (RH) failure in modern DRAM chips poses a significant security concern for high-performance computing. With over 30 years of experience in the field of DRAM, we have dedicated our research to understanding and addressing this issue. We utilize TCAD (Technology Computer-Aided Design) to thoroughly investigate the root cause of RH. 

The application of wide-bandgap power semiconductor devices, such as silicon carbide (SiC) MOSFETs, in electric vehicles (EVs) is gaining popularity due to the increasing demand for green technologies. However, the use of low-resistance power MOSFETs can lead to stability issues in power modules, primarily due to oscillation during high-current switching. Our research focuses on investigating the parasitic effects in power devices and developing device models to address these challenges in the development of next-generation power modules.