Research overview
The rapid advancement of information technology, particularly AI, is expected to continue. Consequently, power consumption will likely explode, inevitably becoming a major social issue. As power saving has become a crucial measure, there is an increasing demand for highly efficient semiconductor power devices. Under these circumstances, silicon carbide (SiC) and gallium nitride (GaN), which possess superior physical properties, are increasingly being used to replace conventional silicon. GaN is currently used primarily as a material for high electron mobility transistors (HEMTs) aimed at low-voltage and high-frequency applications. However, if GaN-based MOSFETs are realized, they could become highly efficient power semiconductor devices and potentially reshape the market segmentation of power device applications. To achieve this, understanding and controlling the MOS interface is crucial. We are conducting research to establish control methods for GaN MOS structures through their fabrication and evaluation.
1. Interface control of MOS structures on p-type GaN and its application to MOSFETs
2. Control of near-surface defects in Mg-implanted GaN
3. Characterization of wide-gap semiconductor MOS interfaces using photo-assisted capacitance–voltage method