Da-Eun Bang


Semiconductor Device & Process Development Lab. (Academic Advisor: Jun-Young Park)


Building E-10, Room #204, Chungbuk National University

E-Mail : bangdaeun@chungbuk.ac.kr


Education


Skills


Publications (SCIE)

[1] D.-E. Bang, M.-K. Lee, E.-C. Yun, T.-H. Kil, H.-J. Park, J.-W. Yeon, M.-W. Kim, S.-J. Jeon, A-Y. Kim, and J.-Y. Park, "Junction Depth Optimization in Trench Gate Nanosheet FETs for Reduced Off-State Current", Silicon [ Website ]


Publications (KCI)

[1] A-Y. Kim, D.-E. Bang, H.-J. Park, T.-H. Kil, J.-W. Yeon, M.-K. Lee, E.-C. Yun, M.-W. Kim, S.-J. Jeon, M.-S. Kim, and J.-Y. Park, "Study on Hetero Gate Dielectrics to Reduce Ambipolar Current in Nanosheet Tunneling FETs", J. Korean Inst. Electr. Electron. Mater. Eng., vol. 38, no. 3, pp. 296–301, May 2025. [ Website ] 


Conferences

[10] A-Y. Kim, J.-W. Yeon, H.-J. Park, T.-H. Kil, M.-K. Lee, E.-C. Yun, M.-W. Kim, S.-J. Jeon, D. Sohn, D.-E. Bang, S.-M. Kang, and J.-Y. Park, "Hetero-Gate Dielectric Structures for Reducing Ambipolar Current in Nanosheet Tunneling FETs", The 32nd Korean Conference on Semiconductors, Feb. 2025. [ PDF ]

[9] M.-K. Lee, H.-J. Park, E.-C. Yun, J.-W. Yeon, T.-H. Kil, M.-W. Kim, S.-J. Jeon, D.-E. Bang, D. Sohn, A-Y. Kim, S.-M. Kang, and J.-Y. Park, "Partial Trench Gate Nanosheet FETs for Enhanced ION/ IOFF Ratio", The 32nd Korean Conference on Semiconductors, Feb. 2025. [ PDF ] 

[8] J.-W. Yeon, H.-J. Park, T.-H. Kil, M.-K. Lee, E.-C. Yun, M.-W. Kim, S.-J. Jeon, D. Sohn, A-Y. Kim, S.-M. Kang, D.-E. Bang, and J.-Y. Park, "Low-Temperature Deuterium Annealing for Improved Immunity against Hot-Carrier Injection in HKMG MOSFETs", The 32nd Korean Conference on Semiconductors, Feb. 2025. [ PDF ] 

[7] T.-H. Kil, J.-W. Yeon, H.-J. Park, D.-E. Bang, M.-K. Lee, E.-C. Yun, M.-W. Kim, S.-J. Jeon, D. Sohn, A-Y. Kim, S.-M. Kang, and J.-Y. Park, "Material Engineering of Inner Spacer in Nanosheet FETs to Reduce Off-State Current", The 32nd Korean Conference on Semiconductors, Feb. 2025. [ PDF ] 

[6] D.-E. Bang, J.-W. Yeon, H.-J. Park, T.-H. Kil, M.-K. Lee, E.-C. Yun, M.-W. Kim, S.-J. Jeon, D. Sohn, A-Y. Kim, S.-M. Kang, and J.-Y. Park, "Junction Depth Engineered Trench Gate Nanosheet FETs for Suppressing Leakage Current in Parasitic Substrate Channels", The 32nd Korean Conference on Semiconductors, Feb. 2025. [ PDF ]

[5] Y.-J. Choi, S.-M. Kang, H.-J. Park, T.-H. Kil, J.-W. Yeon, H.-S. Jee, E.-C. Yun, M.-K. Lee, D. Sohn, D.-E. Bang, A.-Y. Kim, and J.-Y. Park, "Impact of Hydrogen Passivation after Deuterium Annealing in the Fabrication of Silicon MOSFETs", KIEEME Annual Summer Conference 2024, Jun. 2024. [ PDF ] "Award" [ PDF ] 

[4] H.-S. Jee, D. Sohn, J.-W. Yeon, H.-J. Park, T.-H. Kil, E.-C. Yun, M.-K. Lee, S.-M. Kang, A.-Y. Kim, Y.-J. Choi, D.-E. Bang, and  J.-Y. Park, "Development of Physically Unclonable Function (PUF) using Multiple Process Variables", KIEEME Annual Summer Conference 2024, Jun. 2024. [ PDF ]  "Award" [ PDF ] 

[3] E.-C. Yun, J.-W. Yeon, H.-J. Park, T.-H. Kil, M.-K. Lee, H.-S. Jee, D. Sohn, S.-M. Kang, A.-Y. Kim, Y.-J. Choi, D.-E. Bang, and  J.-Y. Park, "Spacer-Less Trench Gate Nanosheet FET for Improved On-State Current and Simplified Fabrication Process", KIEEME Annual Summer Conference 2024, Jun. 2024. [ PDF ] 

[2] T.-H. Kil, H.-J. Park, J.-W. Yeon, E.-C. Yun, M.-K. Lee, D. Sohn, H.-S. Jee, S.-M. Kang, A.-Y. Kim, Y.-J. Choi, D.-E. Bang, and  J.-Y. Park, "Low-Temperature Deuterium Annealing for Enhanced Ionizing Radiation and Electrical Stress Immunity in MOSFETs", KIEEME Annual Summer Conference 2024, Jun. 2024. [ PDF ] 

[1] D.-E. Bang, A-Y. Kim, Y.-W. Yeon, H.-J. Park, T.-H. Kil, M.-K. Lee, E.-C. Yun, D. Sohn, H.-S. Jee, S.-M. Kang, Y.-J. Choi, and J.-Y. Park, "Optimization of Doping Profile for Improved Performance of Nanosheet FET", KIEEME Annual Summer Conference 2024, Jun. 2024. [ PDF ] "Award" [ PDF ] 


Teaching Assistant (TA)