Corresponding author is marked with a *
Undergraduate students from my group are marked with a ‡
Graduate students from my group are marked with a Δ
Postdoctoral researchers from my group are marked with a †
Under review:
30. “Direct Heterogeneous Integration of Molybdenum Disulfide via Single-Source Spin-on Molecular Chemistry” H. Im†, J. HerreraΔ, M.A. Buckingham†, A.S. Gupta‡, D. Lu, K. Ma, S. Nemsak, N. Higashitarumizu, I.K.M.R. Rahman, D. TsengΔ, B.J. Kim†, J. LiangΔ, J. Wan, B. Ward-O’Brien, J. Swindell, E.A. Spickermann‡, X. Ma, Z. Wu, K. Wang, A.C.T. van Duin, N. Nayir, H. Zheng, A. Javey, M.P. Sherburne, D.J. Lewis, J. R. Long, and Z.Y. Al Balushi*
29. “Operando Probing of Nanocracking in CuO-derived Cu during CO2 Electroreduction” J. Wan, E. Liu, W. Choi, J. LiangΔ, B. Zhang, K-H. Kim, X. Sun, M. Zhang, H. Xue, Y. Chen, Q. Zhang, C. Wen, J. Yang, K.C. Bustillo, P. Ercius, D. Leshchev, J. Su, Z.Y. Al Balushi, A.Z. Weber, M. Asta, A.T. Bell, W.S. Drisdell and H. Zheng.
28. “Frustrated Lewis Pair: Cerium Hydrides Promote CO2 Methanation over Ni-CeO2/Al2O3 Catalyst” J. Yang, Y. Chen, M. Bagepalli, J. LiangΔ, J. Wan, X. Zhao, X. Sun, D. Hawthorne, Z. Zhuo, G. Lau, J. Guo, H. Zheng, M. Salmeron, Z.Y. Al Balushi, R. Prasher, J. Su and S. Kaur
Published Sine 2019:
27. “Anchoring order in tellurium nanowire thin films”, Z. MaoΔ and Z.Y. Al Balushi*, Nature Synthesis 5 (2026): 644-646.
DOI: 10.1038/s44160-026-01066-9
26. “Spatially Enhanced Electrostatic Doping in Graphene Realized via Heterointerfacial Precipitated Metals”, J. LiangΔ, K. Ma, E. Walker, C. Johnson, X. Zhao, T. Terlier, J.C. Thomas, J. Wan, N. Dale, E. Rotenberg, A. Bostwick, C. Jozwiak, J.-W. Jang, M. Salmeron, P.D. Ashby, J. Kim, H. Zheng, A. Weber-Bargioni, T. Beechem, M.P. Sherburne, Z.Y. Al Balushi*, Small 21, no. 23 (2025): 2412750. [Article Received Journal Cover]
25. “Phase Controlled Metalorganic Chemical Vapor Deposition Growth of Wafer-Scale Molybdenum Ditelluride”, B.J. Kim†, D. TsengΔ, D. Dang, J. LiangΔ, V. Soukhoveev, A. Osinsky, K. Wang, H.W.H. Lee, Z.Y. Al Balushi*, ACS Nanoscience Au 5, no. 1 (2025): 1-8.
DOI: 10.1021/acsnanoscienceau.4c00050
24. “Colorimetric Multigas Sensor Arrays and an Artificial Olfactory Platform for Volatile Organic”, H. Im†, J. Choi, H. Lee, Z.Y. Al Balushi, D-H. Park, and S. Kim, ACS sensors 8, no. 9 (2023): 3370-3379.
DOI: 10.1021/acssensors.3c00350
23. “Elucidating the Mechanism of Large Phosphate Molecule Intercalation Through Graphene Heterointerfaces” J. LiangΔ, K. Ma, X. Zhao, G. Lu, J. V. Riffle, C. Andrei, C. Dong, T. Furkan, S. Rajabpour, R. Ramanujam Prabhakar, J.A. Robinson, M. R. Vasquez Jr., Q. Thang Trinh, J.W. Ager, M. Salmeron, S. Aloni, J.D. Caldwell, S.M. Hollen, H.A. Bechtel, N. Bassim, M.P. Sherburne, Z. Y. Al Balushi*, ACS Applied Materials & Interfaces 15, no. 40 (2023): 47649-47660.
22. “Visualizing Facets Asymmetry Induced Directional Movement of Cadmium Chloride Nanomotor” J. Wan, Q. Zhang, J. LiangΔ, K.C. Bustillo, Z.Y. Al Balushi, M. Asta and H. Zheng, Nano Letters 23, no. 22 (2023): 10132-10139.
DOI: 10.1021/acs.nanolett.3c02291
21. “All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity” W. Redjem, Y. Zhiyenbayev, W. Qarony, V. Ivanov, C. Papapanos, W. Liu, K. Jhuria, Z.Y. Al Balushi, S. Dhuey, A. Schwartzberg, L. Z. Tan, T. Schenkel, and B. Kanté, Nature Communications 14, no. 1 (2023): 3321.
DOI: 10.1038/s41467-023-38559-6
20. "Rydberg Excitons and Trions in Monolayer MoTe2" S. Biswas, A. Champagne, J. Haber, S. Pokawanvit, J. Wong, H. Akbari, S. Krylyuk, K. Watanabe, T. Taniguchi, A. Davydov, Z.Y. Al Balushi, D. Qiu, F. da Jornada, J. Neaton, H. Atwater, ACS nano 17, no. 8 (2023): 7685-7694.
19. “Light Induced Surface Tension Gradients for Hierarchical Assembly of Particles from Liquid Metals” J. LiangΔ, Z.Y. Al Balushi*, ACS Applied Materials & Interfaces 15, no. 7 (2023): 10182-10192. [Article Received Journal Cover]
18. “Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook” T. Vincent, J. LiangΔ, S. Singh, E. G. Castanon, X. Zhang†, A. McCreary, D. Jariwala, O. Kazakova, Z.Y. Al Balushi*, Applied Physics Reviews 8, no. 4 (2021).
DOI: 10.1063/5.0051394
17. “Impact of Binder Functional Groups on Controlling Chemical Reactions to Improve Stability of Rechargeable Zinc-Ion Batteries” N. Jaikrajang, W. Kao-Ian, T. Muramatsu, R. Chanajaree, Y. Tetsu, Z.Y. Al Balushi, S. Kheawhom, R. Cheacharoen, ACS Applied Energy Materials 4, no. 7 (2021): 7138-7147.
16. “An Outlook into the Flat Land of Beyond Graphene 2D Materials: Synthesis, Properties and Device Applications” A. McCreary, O. Kazakova, D. Jariwala and Z.Y. Al Balushi*, 2D Materials 8, no. 1 (2020): 013001.
DOI: 110.1088/2053-1583/abc13d
15. “Cathodoluminescence spatially resolves optical transitions in thick group-III and N-polar InGaN films” A. Bansal, J. M. Redwing, and Z.Y. Al Balushi*, Journal of Applied Physics 128, no. 17 (2020).
DOI: 10.1063/5.0025361
14. “Band Edge Tailoring in Few-Layer Two-Dimensional Molybdenum Sulfide/Selenide Alloys” Y-R. Lin, W-H. Cheng, M. Richter, J. DuChene, E. Peterson, C. Went, Z.Y. Al Balushi, D. Jariwala, J. B Neaton, L-C. Chen and H.A. Atwater, The Journal of Physical Chemistry C 124, no. 42 (2020): 22893-22902
13. “Epitaxial Growth of 2D Layered Transition Metal Dichalcogenides” T. Choudhury, X. Zhang, Z.Y. Al Balushi, M. Chubarov, and J. M. Redwing, Annual Review of Materials Research 50, no. 1 (2020): 155-177.
DOI: 10.1146/annurev-matsci-090519-113456
12. “Van der Waals epitaxy and composition control of layered SnSxSe2−x alloy thin films” J. Fox, X. Zhang, Z.Y. Al Balushi, M. Chubarov, A. Kozhakhmetov, J. Redwing, Journal of Materials Research 35, no. 11 (2020): 1386-1396.
DOI: 10.1017/S0885715620000615
Books/Chapters published since 2019:
11. Book Title: Comprehensive Semiconductor Science and Technology, Second Edition, Publishing Group (Second Edition): Elsevier
Chapter Title: Integration of Dissimilar Materials
pages 304-328
Authors: Z.Y. Al Balushi* and T. Kuech
DOI: 10.1016/B978-0-323-96027-4.00032-2
Published prior to 2019:
10. “Effect of substrate on the growth and properties of thin 3R NbS2 films grown by chemical vapor deposition” A. Kozhakhmetov, T. Choudhury, Z.Y. Al Balushi, M. Chubarov, J. Redwing, Journal of Crystal Growth 486 (2018): 137-141.
DOI: 10.1016/j.jcrysgro.2018.01.031
9. “Heteroepitaxy of Highly Oriented GaN Films on Non-Single Crystal Substrates Using a Si (111) Template Layer Formed by Aluminum-Induced Crystallization”, M. Hainey Jr, Z.Y. Al Balushi, K. Wang, N. Martin, A. Bansal, M. Chubarov, J. M. Redwing, Physica Status Solidi (RRL)–Rapid Research Letters 12, no. 3 (2018): 1700392. [Article Received Journal Cover]
8. “In situ stress measurements during MOCVD growth of thick N-polar InGaN”, Z.Y. Al Balushi and J. M. Redwing, Journal of Applied Physics 122, no. 8 (2017).
DOI: 10.1063/1.4998745
7. “The effect of polarity on MOCVD growth of thick InGaN” Z.Y. Al Balushi and J. Redwing, Applied Physics Letters 110, no. 2 (2017).
DOI: 10.1063/1.4972967
6. “Two-dimensional gallium nitride realized via graphene encapsulation” Z.Y. Al Balushi, K. Wang, R. Ghosh, R. Vilá, S. Eichfeld, J. Caldwell, X. Qin, Y. Lin, P. DeSario, G. Stone, S. Subramanian, D. Paul, R. Wallace, S. Datta, J. Redwing and J. Robinson, Nature Materials 15, no. 11 (2016): 1166-1171. [Nature News and Reviews Coverage; cited >880 times].
DOI: 10.1038/nmat4742
5. “Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films” X. Zhang, Z.Y. Al Balushi, T. Choudhury, S. Eichfeld, T. Jackson, J. Robinson and J. Redwing, Journal of Electronic Materials 45, no. 12 (2016): 6273-6279.
DOI: 10.1007/s11664-016-5033-0
4. “In situ stress measurements during direct MOCVD growth of GaN on SiC” Z.Y. Al Balushi and J. Redwing, Journal of Materials Research 30, no. 19 (2015): 2900-2909.
DOI: 10.1557/jmr.2015.210
3. “The Impact of Graphene Properties on GaN and AlN Nucleation” Z.Y. Al Balushi, T. Miyagi, Y. Lin, K. Wang, L. Calderin, G. Bhimanapati, J. Redwing, J. Robinson, Surface Science 634 (2015): 81-88. [Article Received Journal Cover]
DOI: 10.1016/j.susc.2014.11.020
2. “Influence of growth stress on the surface morphology of N-polar GaN films grown on vicinal C-face SiC substrates”, D. Won, X. Weng, Z.Y. Al Balushi and J. M. Redwing, Applied Physics Letters 103, no. 24 (2013).
DOI: 10.1063/1.4845575
1. “Growth of Ge Nanowires from Au−Cu Alloy Nanoparticle Catalysts Synthesized from Aqueous Solution”, J. G. Connell, Z.Y. Al Balushi, K. Sohn, J. Huang and L. J Lauhon, The Journal of Physical Chemistry Letters 1, no. 23 (2010): 3360-3365.
DOI: 10.1021/jz101436a
Intellectual Property:
Undergraduate students from my group are marked with a ‡
Graduate students from my group are marked with a Δ
Postdoctoral researchers from my group are marked with a †
1. “METHOD FOR THE SYNTHESIS OF GALLIUM NITRIDE WITH N2 NEAR ROOM TEMPERATURE” – Inventors: S. SusantoΔ‡ and Z.Y. Al Balushi U.S. National Stage Patent Application No. 19/108,702, filed March 4, 2025. Derived from PCT/US2023/073226 (international filing date August 31, 2023) and claiming priority to U.S. Provisional 63/403,915 (filed September 6, 2022). Applicant: The Regents of the University of California. UCB Ref. BK-2022-138-2-US. MN Ref. 407869-0190.
2. DIRECT HETEROGENEOUS INTEGRATION OF OXIDE MATERIALS ON TRANSITION METAL DICHALCOGENIDES” – Inventors: H. Im† and Z.Y. Al Balushi WO 2025221641 A1, published 2025, filed 2025. World Intellectual Property Organization (PCT).
3. “LOW TEMPERATURE FORMATION OF TRANSITION METAL DISULFIDE THIN FILMS” – Inventors: H. Im†, A. Gupta‡ and Z.Y. Al Balushi WO 2024211486A2, published October 10, 2024, filed April 4, 2024. World Intellectual Property Organization (PCT).