Principal Investigator 

 Dr. Hsiao-Hsuan Hsu received the B.S. degree in Department of Material Science and Engineering and M.S./Ph.D. degrees in Department of Electronics Engineering from National Chiao Tung University (NCTU), Taiwan. From 2009 to 2014, Dr. Hsu was with the Green Energy and Environment Research Laboratory, Industrial Technology Research Institute (ITRI), where she was a researcher since 2013. Dr. Hsu then worked at Taiwan Semiconductor Manufacturing Company Ltd. (TSMC), where she was engaged in the development and manufacturing on high-k/metal-gate materials and SRAM devices reliability. Dr. Hsu is currently an associate professor at the Department of Materials and Mineral Resources Engineering, National Taipei University of Technology (NTUT). She has published 30 journal papers, 24 conference papers, and 9 patents. Dr. Hsu's research is focused on advanced CMOS devices, Memory devices and TFT devices and related device reliability. (CMOS奈米電晶體、記憶體元件、薄膜電晶體、電性可靠度)  

Education

• Ph.D., Department of Electronics Engineering, National Chiao Tung University.

• M.S., Department of Electronics Engineering, National Chiao Tung University.

• B.S., Department of Material Science and Engineering, National Chiao Tung University.

• Affiliated Senior High School of National Taiwan Normal University

Professional Experience

• Associate professor, Department of Materials and Mineral Resources Engineering, National Taipei University of Technology (NTUT), 2017-now

• Principle Engineer, Taiwan Semiconductor Manufacturing Company Ltd. (TSMC), 2014-2016

• Researcher, Industrial Technology Research Institute (ITRI), 2009-2014

• Senior Engineer, Taiwan Semiconductor Manufacturing Company Ltd. (TSMC), 2008-2009