Research Domain

RESEARCH INTEREST: Broad research area is VLSI, Microelectronics, nanoelectronics and spintronics covering a wide spectrum of nanoelectronic devices, memory, digital, analog, RF, and mixed-signal circuit design. Research interests include VLSI Design/CAD for nanoscale silicon and non-silicon technologies [which center around the emerging nanoelectronics and spintronics devices like HEMT (high electron mobility transistor),  TFET (funneling FET), SiC U-MOSFET, SiC V-MOSFET, VDMOSFET, FinFET, CNFET (Carbon Nanotube Field Effect Transistor), STT (spin-transfer torque)-based MTJ (magnetic tunnel junction) and memristor], SET (Single Electron Transistor), Multivalued Logic, SRAM (Static Random Access Memory), Radiation-Hardened Memory, RRAM (resistive random access memory), PCRAM (Phase Change Random Access Memory), STT-MTJ based MRAM (magnetic random access memory), power- and variability-aware design, RF device and circuit modeling, design of ultralow-power nanoscale circuits for portable/wearable/energy-harvesting applications.