Journal
Heterostructured Mo2N–Mo2C nanoparticles coupled with N-doped carbonized wood to accelerate the hydrogen evolution reaction
Heterostructured Mo2N–Mo2C nanoparticles coupled with N-doped carbonized wood to accelerate the hydrogen evolution reaction
Jangwon Bang, In Kyu Moon, Young-Kwang Kim and Jungwoo Oh *
Jangwon Bang, In Kyu Moon, Young-Kwang Kim and Jungwoo Oh *
Catalytic Nickel-silicide as an Alternative to Noble Metals in Metal-assisted Chemical Etching
Catalytic Nickel-silicide as an Alternative to Noble Metals in Metal-assisted Chemical Etching
K Kim,‡ S Choi,‡ H Bong, H Lee, M Kim, J Oh ‡ These authors made equal contributions
K Kim,‡ S Choi,‡ H Bong, H Lee, M Kim, J Oh ‡ These authors made equal contributions
Three-dimensional multimodal porous graphene-carbonized wood for highly efficient solar steam generation
Three-dimensional multimodal porous graphene-carbonized wood for highly efficient solar steam generation
J Bang, IK Moon, J Oh
J Bang, IK Moon, J Oh
Energy band offsets of BeO dielectrics grown via atomic-layer deposition on ß-Ga2O3 substrates
Energy band offsets of BeO dielectrics grown via atomic-layer deposition on ß-Ga2O3 substrates
D Jung, Y Jang, PR Sultane, CW Bielawski, J Oh*
D Jung, Y Jang, PR Sultane, CW Bielawski, J Oh*
Polarization-Induced Two-Dimensional Electron Gas at BeO/ZnO Interface
Polarization-Induced Two-Dimensional Electron Gas at BeO/ZnO Interface
Y Jang, D Jung, PR Sultane, CW Bielawski, J Oh*
Y Jang, D Jung, PR Sultane, CW Bielawski, J Oh*
Phase-engineering terraced structure of edge-rich α-Mo2C for efficient hydrogen evolution reaction
Phase-engineering terraced structure of edge-rich α-Mo2C for efficient hydrogen evolution reaction
J Bang, IK Moon, K Choi, J Oh*
J Bang, IK Moon, K Choi, J Oh*
Low Temperature Growth of Beryllium Oxide Thin Films Prepared via Plasma Enhanced Atomic Layer Deposition
Low Temperature Growth of Beryllium Oxide Thin Films Prepared via Plasma Enhanced Atomic Layer Deposition
Y Jang, D Jung, PR Sultane, ES Larsen, CW Bielawski, J Oh*
Y Jang, D Jung, PR Sultane, ES Larsen, CW Bielawski, J Oh*
Fully wood-based green triboelectric nanogenerators
Fully wood-based green triboelectric nanogenerators
J Bang, IK Moon, YP Jeon, B Ki, J Oh*
J Bang, IK Moon, YP Jeon, B Ki, J Oh*
Mesoporous ZnCo2O4 nanowire arrays with oxygen vacancies and N-dopants for significant improvement of non-enzymatic glucose detection
Mesoporous ZnCo2O4 nanowire arrays with oxygen vacancies and N-dopants for significant improvement of non-enzymatic glucose detection
DS Kim, IK Moon, JH Yang, K Choi, J Oh*, SW Kim*
DS Kim, IK Moon, JH Yang, K Choi, J Oh*, SW Kim*
Enhanced photoelectrochemical efficiency and stability using nitrogen-doped TiO2 on a GaAs photoanode
Enhanced photoelectrochemical efficiency and stability using nitrogen-doped TiO2 on a GaAs photoanode
Keorock Choi, Jangwon Bang, In kyu Moon, Kyunghwan Kim, Jungwoo Oh*
Keorock Choi, Jangwon Bang, In kyu Moon, Kyunghwan Kim, Jungwoo Oh*
Chemical Carving Lithography with Scanning Catalytic Probes
Chemical Carving Lithography with Scanning Catalytic Probes
Bugeun Ki, Kyunghwan Kim, Keorock Choi, Jungwoo Oh*
Bugeun Ki, Kyunghwan Kim, Keorock Choi, Jungwoo Oh*
Ultralow Optical and Electrical Losses via Metal-assisted Chemical Etching of Antireflective Nanograss in Conductive Mesh Electrodes
Ultralow Optical and Electrical Losses via Metal-assisted Chemical Etching of Antireflective Nanograss in Conductive Mesh Electrodes
Kyunghwan Kim, Bugeun Ki, Haekyun Bong, Keorock Choi, Jungwoo Oh*
Kyunghwan Kim, Bugeun Ki, Haekyun Bong, Keorock Choi, Jungwoo Oh*
Three-Dimensional Porous Stretchable Supercapacitor with Wavy Structured PEDOT:PSS/Graphene Electrode
Three-Dimensional Porous Stretchable Supercapacitor with Wavy Structured PEDOT:PSS/Graphene Electrode
In Kyu Moon, Bugeun Ki, Jungwoo Oh*
In Kyu Moon, Bugeun Ki, Jungwoo Oh*
Electrochemical Local Etching of Silicon in Etchant Vapor
Electrochemical Local Etching of Silicon in Etchant Vapor
Bugeun Ki, Keorock Choi, Kyunghwan Kim, Jungwoo Oh*
Bugeun Ki, Keorock Choi, Kyunghwan Kim, Jungwoo Oh*
Band alignment of BeO gate dielectric grown by atomic-layer deposition on AlGaN/GaN HEMTs
Band alignment of BeO gate dielectric grown by atomic-layer deposition on AlGaN/GaN HEMTs
Seung Min Lee, Do Hwan Jung, Seonno Yoon, Yoonseo Jang, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski, Jungwoo Oh*
Seung Min Lee, Do Hwan Jung, Seonno Yoon, Yoonseo Jang, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski, Jungwoo Oh*
Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
Yoonseo Jang, Seung Min Lee, Do Hwan Jung, Jung Hwan Yum, Eric S.Larsen, Christopher W. Bielawski, Jungwoo Oh*
Yoonseo Jang, Seung Min Lee, Do Hwan Jung, Jung Hwan Yum, Eric S.Larsen, Christopher W. Bielawski, Jungwoo Oh*
Anodic Imprint Lithography: Direct Imprinting of Single Crystalline GaAs with Anodic Stamp
Anodic Imprint Lithography: Direct Imprinting of Single Crystalline GaAs with Anodic Stamp
Kyunghwan Kim, Bugeun Ki, Keorock Choi, Jungwoo Oh*
Kyunghwan Kim, Bugeun Ki, Keorock Choi, Jungwoo Oh*
Crystal Properties of Atomic-Layer Deposited Beryllium Oxide on Crystal and Amorphous Substrates
Crystal Properties of Atomic-Layer Deposited Beryllium Oxide on Crystal and Amorphous Substrates
Seung Min Lee, Yoonseo Jang, Jung Hwan Yum, Eric S. Larsen, Woo Chul Lee, Seong Keun Kim, Christopher W. Bielawski, Jungwoo Oh*
Seung Min Lee, Yoonseo Jang, Jung Hwan Yum, Eric S. Larsen, Woo Chul Lee, Seong Keun Kim, Christopher W. Bielawski, Jungwoo Oh*
Polarization Modulation Effect of BeO on AlGaN/GaN High-Electron-Mobility Transistors
Polarization Modulation Effect of BeO on AlGaN/GaN High-Electron-Mobility Transistors
Weijie Wang, Seung Min Lee, Sara Pouladi, Jie Chen, Shahab Shervin, Seonno Yoon, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski, Bikramjit Chatterjee, Sukwon Choi, Jungwoo Oh*, Jae-Hyun Ryou*
Weijie Wang, Seung Min Lee, Sara Pouladi, Jie Chen, Shahab Shervin, Seonno Yoon, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski, Bikramjit Chatterjee, Sukwon Choi, Jungwoo Oh*, Jae-Hyun Ryou*
Subwavelength photocathodes via metal-assisted chemical etching of GaAs for solar hydrogen generation
Subwavelength photocathodes via metal-assisted chemical etching of GaAs for solar hydrogen generation
Keorock Choi, Kyunghwan Kim, In Kyu Moon, Jangwon Bang, Jungwoo Oh
Keorock Choi, Kyunghwan Kim, In Kyu Moon, Jangwon Bang, Jungwoo Oh
Crystalline beryllium oxide on Si (100) deposited using E-beam evaporator and thermal oxidation
Crystalline beryllium oxide on Si (100) deposited using E-beam evaporator and thermal oxidation
Seonno Yoon, Seung Min Lee, Jung Hwan Yum, Christopher W. Bielawski, Hi-Deok Lee, Jungwoo Oh*
Seonno Yoon, Seung Min Lee, Jung Hwan Yum, Christopher W. Bielawski, Hi-Deok Lee, Jungwoo Oh*
Domain epitaxy of crystalline BeO films on GaN and ZnO substrates
Domain epitaxy of crystalline BeO films on GaN and ZnO substrates
S. M. Lee, J. H. Yum, E. S. Larsen, S. Shervin, W. Wang, J.‐H. Ryou, W. Bielawski, W. C. Lee, S. K. Kim, J. Oh*
S. M. Lee, J. H. Yum, E. S. Larsen, S. Shervin, W. Wang, J.‐H. Ryou, W. Bielawski, W. C. Lee, S. K. Kim, J. Oh*
Crystalline BeO grown on 4H-SiC via atomic layer deposition: Band alignment and interface defects
Crystalline BeO grown on 4H-SiC via atomic layer deposition: Band alignment and interface defects
Seung Min Lee, Yoonseo Jang, Jongho Jung, Jung Hwan Yum, Eric S. Larsen, Sang Yeon Lee, Hyungtak Seo, Christopher W. Bielawski, Hi-Deok Lee, Jungwoo Oh*
Seung Min Lee, Yoonseo Jang, Jongho Jung, Jung Hwan Yum, Eric S. Larsen, Sang Yeon Lee, Hyungtak Seo, Christopher W. Bielawski, Hi-Deok Lee, Jungwoo Oh*
Resist-Free Direct Stamp Imprinting of GaAs via Metal-Assisted Chemical Etching
Resist-Free Direct Stamp Imprinting of GaAs via Metal-Assisted Chemical Etching
Kyunghwan Kim, Bugeun Ki, Keorock Choi, Seungmin Lee, Jungwoo Oh*
Kyunghwan Kim, Bugeun Ki, Keorock Choi, Seungmin Lee, Jungwoo Oh*
Atomic-layer deposition of crystalline BeO on SiC
Atomic-layer deposition of crystalline BeO on SiC
Seung Min Lee, Yoonseo Jang, Jongho Jung, Jung Hwan Yum, Eric S. Larsen, Weijie Wang, Jae-Hyun Ryou, Hyun-Seop Kim, Ho-Young Cha, Christopher W. Bielawski, Jungwoo Oh*
Seung Min Lee, Yoonseo Jang, Jongho Jung, Jung Hwan Yum, Eric S. Larsen, Weijie Wang, Jae-Hyun Ryou, Hyun-Seop Kim, Ho-Young Cha, Christopher W. Bielawski, Jungwoo Oh*
Evaluation of electroless Pt deposition and electron beam Pt evaporation on p-GaAs as a photocathode for hydrogen evolution
Evaluation of electroless Pt deposition and electron beam Pt evaporation on p-GaAs as a photocathode for hydrogen evolution
Keorock Choi, Kyunghwan Ki, In kyu Moon, Ilwhan Oh, Jungwoo Oh*
Keorock Choi, Kyunghwan Ki, In kyu Moon, Ilwhan Oh, Jungwoo Oh*
An efficient amplification strategy for N-doped NiCo2O4 with oxygen vacancies and partial Ni/Co-nitrides as a dual-function electrode for both supercapatteries and hydrogen electrocatalysis
An efficient amplification strategy for N-doped NiCo2O4 with oxygen vacancies and partial Ni/Co-nitrides as a dual-function electrode for both supercapatteries and hydrogen electrocatalysis
Keorock Choi, In Kyu Moon, Jungwoo Oh*
Keorock Choi, In Kyu Moon, Jungwoo Oh*
Remarkable Enhancement of Electrochemical Performance by the Oxygen Vacancy and Nitrogen Doping in ZnCo2O4 Nanowire Arrays
Remarkable Enhancement of Electrochemical Performance by the Oxygen Vacancy and Nitrogen Doping in ZnCo2O4 Nanowire Arrays
IK Moon, S Yoon, B Ki, K Choi, J Oh*
IK Moon, S Yoon, B Ki, K Choi, J Oh*
Chemical Imprinting of Crystalline Silicon with Catalytic Metal Stamp in Etch Bath
Chemical Imprinting of Crystalline Silicon with Catalytic Metal Stamp in Etch Bath
Bugeun Ki, Yunwon Song, Keorock Choi, Jung Hwan Yum, Jungwoo Oh*
Bugeun Ki, Yunwon Song, Keorock Choi, Jung Hwan Yum, Jungwoo Oh*
Epitaxial ZnO gate dielectric deposited by RF sputter for AlGaN/GaN high electron mobility transistors
Epitaxial ZnO gate dielectric deposited by RF sputter for AlGaN/GaN high electron mobility transistors
Seonno Yoon, Seungmin Lee, Hyun-Seop Kim, Ho-Young Cha, Hi-Deok Lee, Jungwoo Oh*
Seonno Yoon, Seungmin Lee, Hyun-Seop Kim, Ho-Young Cha, Hi-Deok Lee, Jungwoo Oh*
Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates
Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates
Seung Min Lee, Jung Hwan Yum, Eric S. Larsen, Woo Chul Lee, Seong Keun Kim, Christopher W. Bielawski, Jungwoo Oh*
Seung Min Lee, Jung Hwan Yum, Eric S. Larsen, Woo Chul Lee, Seong Keun Kim, Christopher W. Bielawski, Jungwoo Oh*
Three-dimensional Flexible All-Organic Conductors for Multifunctional Wearable Applications
Three-dimensional Flexible All-Organic Conductors for Multifunctional Wearable Applications
In Kyu Moon, Seonno Yoon, Hee Uk Lee, Seuong Wook Kim*, Jungwoo Oh*
In Kyu Moon, Seonno Yoon, Hee Uk Lee, Seuong Wook Kim*, Jungwoo Oh*
3D Highly Conductive Silver Nanowire@ PEDOT: PSS Composite Sponges for Flexible Conductors and Their All‐Solid‐State Supercapacitor Applications
3D Highly Conductive Silver Nanowire@ PEDOT: PSS Composite Sponges for Flexible Conductors and Their All‐Solid‐State Supercapacitor Applications
In Kyu Moon, Seonno Yoon, Jungwoo Oh*
In Kyu Moon, Seonno Yoon, Jungwoo Oh*
Advanced Silicon-on-Insulators: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide
Advanced Silicon-on-Insulators: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide
Seung Min Lee, Jung Hwan Yum, Eric S. Larsen, Woo Chul Lee, Seong Keun Kim, Christopher W. Bielawski, Jungwoo Oh*
Seung Min Lee, Jung Hwan Yum, Eric S. Larsen, Woo Chul Lee, Seong Keun Kim, Christopher W. Bielawski, Jungwoo Oh*
Nanostructured GaAs solar cells via metal-assisted chemical etching of emitter layers
Nanostructured GaAs solar cells via metal-assisted chemical etching of emitter layers
Yunwon Song, Keorock Choi, Dong-Hwan Jun, Jungwoo Oh*
Yunwon Song, Keorock Choi, Dong-Hwan Jun, Jungwoo Oh*
Nano/Micro dual-textured antireflective subwavelength structures in anisotropically etched GaAs
Nano/Micro dual-textured antireflective subwavelength structures in anisotropically etched GaAs
Kyunghwan Kim, Yunwon Song, Jungwoo Oh
Kyunghwan Kim, Yunwon Song, Jungwoo Oh
Nonlinear Etch Rate of Au-Assisted Chemical Etching of Silicon
Nonlinear Etch Rate of Au-Assisted Chemical Etching of Silicon
Keorock Choi, Yunwon Song, Bugeun Ki, Jungwoo Oh*
Keorock Choi, Yunwon Song, Bugeun Ki, Jungwoo Oh*
Evaluation of titanium disilicide/copper Schottky gate for AlGaN/GaN high electron mobility transistors
Evaluation of titanium disilicide/copper Schottky gate for AlGaN/GaN high electron mobility transistors
Seonno Yoon, Seung Min Lee, Jeyoung Kim, Hi-Deok Lee, Ho-Young Cha, Jungwoo Oh*
Seonno Yoon, Seung Min Lee, Jeyoung Kim, Hi-Deok Lee, Ho-Young Cha, Jungwoo Oh*
Three-Dimensional Hierarchically Mesoporous ZnCo2O4 Nanowires Grown on Graphene/Sponge Foam for High Performance Flexible All‐Solid‐State Supercapacitors
Three-Dimensional Hierarchically Mesoporous ZnCo2O4 Nanowires Grown on Graphene/Sponge Foam for High Performance Flexible All‐Solid‐State Supercapacitors
In Kyu Moon, Seonno Yoon, Jungwoo Oh*
In Kyu Moon, Seonno Yoon, Jungwoo Oh*
Nano/micro double texturing antireflective subwavelength structures on inverted pyramids using metal-assisted chemical etching
Nano/micro double texturing antireflective subwavelength structures on inverted pyramids using metal-assisted chemical etching
Yunwon Song, Kyungwhan Kim, Keorock Choi, Bugeun Ki, Jungwoo Oh*
Yunwon Song, Kyungwhan Kim, Keorock Choi, Bugeun Ki, Jungwoo Oh*
Phosphorus implantation into in-situ doped Ge-on-Si for high light-emitting efficiency
Phosphorus implantation into in-situ doped Ge-on-Si for high light-emitting efficiency
Jiwoong Baek, Bugeun Ki, Daeik Kim, Chulwon Lee, Donguk Nam, Yong-Hoon Cho, Jungwoo Oh
Jiwoong Baek, Bugeun Ki, Daeik Kim, Chulwon Lee, Donguk Nam, Yong-Hoon Cho, Jungwoo Oh
Lateral photovoltaic effect in flexible free-standing reduced graphene oxide film for self-powered position-sensitive detection
Lateral photovoltaic effect in flexible free-standing reduced graphene oxide film for self-powered position-sensitive detection
In Kyu Moon, Bugeun Ki, Seonno Yoon, Jungwoo Oh*
In Kyu Moon, Bugeun Ki, Seonno Yoon, Jungwoo Oh*
Thermally induced tensile strain of epitaxial Ge layers grown by a two-step e-beam evaporation process on Si substrates
Thermally induced tensile strain of epitaxial Ge layers grown by a two-step e-beam evaporation process on Si substrates
Bugeun Ki, Kyung Ho Kim, Hyungjun Kim, Chulwon Lee, Yong-Hoon Cho, Jungwoo Oh*
Bugeun Ki, Kyung Ho Kim, Hyungjun Kim, Chulwon Lee, Yong-Hoon Cho, Jungwoo Oh*
Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic Contacts to AlGaN/GaN Heterostructures
Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic Contacts to AlGaN/GaN Heterostructures
Seonno Yoon, Yunwon Song, Seung Min Lee, Hi-Deok Lee, Jungwoo Oh*
Seonno Yoon, Yunwon Song, Seung Min Lee, Hi-Deok Lee, Jungwoo Oh*
Interfacial AlN formation of Si/Ti/Al/Cu Ohmic contact for AlGaN/GaN high-electron-mobility transistors
Interfacial AlN formation of Si/Ti/Al/Cu Ohmic contact for AlGaN/GaN high-electron-mobility transistors
Seonno Yoon, Jangwon Bang, Hi-Deok Lee, Jungwoo Oh*
Seonno Yoon, Jangwon Bang, Hi-Deok Lee, Jungwoo Oh*
Fabrication of three-dimensional GaAs antireflective structures by metal-assisted chemical etching
Fabrication of three-dimensional GaAs antireflective structures by metal-assisted chemical etching
Yunwon Song, Jungwoo Oh*
Yunwon Song, Jungwoo Oh*
The impact of gate to drain spacing on hot-carrier degradation in sub-100nm Ni-Pt salicidation FinFETs
The impact of gate to drain spacing on hot-carrier degradation in sub-100nm Ni-Pt salicidation FinFETs
Seung Min Lee, Hi-Deok Lee, Injo Ok, Jungwoo Oh*
Seung Min Lee, Hi-Deok Lee, Injo Ok, Jungwoo Oh*
Highly elastic and conductive N-doped monolithic graphene aerogels for multifunctional applications
Highly elastic and conductive N-doped monolithic graphene aerogels for multifunctional applications
In Kyu Moon, Seonno Yoon, Kyeong-Yong Chun, Jungwoo Oh*
In Kyu Moon, Seonno Yoon, Kyeong-Yong Chun, Jungwoo Oh*
Microstructural Characterization of Au-free Si/Ti/Al/Cu Ohmic Contacts in an AlGaN/GaN Heterostructure
Microstructural Characterization of Au-free Si/Ti/Al/Cu Ohmic Contacts in an AlGaN/GaN Heterostructure
Seonno Yoon, Jangwon Bang, Yunwon Song, Jungwoo Oh*
Seonno Yoon, Jangwon Bang, Yunwon Song, Jungwoo Oh*
Catalyst Feature Independent Metal-Assisted Chemical Etching of Silicon
Catalyst Feature Independent Metal-Assisted Chemical Etching of Silicon
Keorock Choi, Yunwon Song, Ilwhan Oh, Jungwoo Oh*
Keorock Choi, Yunwon Song, Ilwhan Oh, Jungwoo Oh*
Au‐free Si MOS compatible Ni/Ge/Al ohmic contacts to n+‐InGaAs
Au‐free Si MOS compatible Ni/Ge/Al ohmic contacts to n+‐InGaAs
Jungwoo Oh*, Seonno Yoon, Bugeun Ki, Yunwon Song, Hi‐Deok Lee
Jungwoo Oh*, Seonno Yoon, Bugeun Ki, Yunwon Song, Hi‐Deok Lee
Controlled Tensile Strain of Ge Films Hetero-Epitaxially Grown on Si Substrates Using E-Beam Evaporator
Controlled Tensile Strain of Ge Films Hetero-Epitaxially Grown on Si Substrates Using E-Beam Evaporator
Bugeun Ki, Kyung Ho Kim, Jungwoo Oh*
Bugeun Ki, Kyung Ho Kim, Jungwoo Oh*
Thermally Driven Metal-Assisted Chemical Etching of GaAs with In-Position and Out-of-Position Catalyst
Thermally Driven Metal-Assisted Chemical Etching of GaAs with In-Position and Out-of-Position Catalyst
Yunwon Song, Jungwoo Oh*
Yunwon Song, Jungwoo Oh*
In-Plane and Out-of-Plane Mass Transport in Metal-Assisted Chemical Etching of GaAs
In-Plane and Out-of-Plane Mass Transport in Metal-Assisted Chemical Etching of GaAs
Yunwon Song, Bugeun Ki, Keorock Choi, Ilwhan Oh, Jungwoo Oh*
Yunwon Song, Bugeun Ki, Keorock Choi, Ilwhan Oh, Jungwoo Oh*
Ge Metal Oxide Semiconductor Field Effect Transistors with Optimized Si Cap and High-k Metal Gate Stacks
Ge Metal Oxide Semiconductor Field Effect Transistors with Optimized Si Cap and High-k Metal Gate Stacks
Jungwoo Oh*
Jungwoo Oh*
Low Interface Defect Density of ALD BeO with Self-cleaning Reaction for InGaAs MOSFETs
Low Interface Defect Density of ALD BeO with Self-cleaning Reaction for InGaAs MOSFETs
H. S. Shin, J. H. Yum, D. W. Johnson, H. R. Harris, Todd. W. Hudnall, J. Oh, P. Kirsch, R. Jammy, W. Y. Loh, W. Wang, G. Bersuker, C. W. Bielawski, S. K. Banerjee, J. C. Lee, and H. D. Lee
H. S. Shin, J. H. Yum, D. W. Johnson, H. R. Harris, Todd. W. Hudnall, J. Oh, P. Kirsch, R. Jammy, W. Y. Loh, W. Wang, G. Bersuker, C. W. Bielawski, S. K. Banerjee, J. C. Lee, and H. D. Lee
A Study of Capping Layers for Sulfur Monolayer Doping on III-V Junctions
A Study of Capping Layers for Sulfur Monolayer Doping on III-V Junctions
J. H. Yum, H. S. Shin, J. Barnett, R. Hill, J. Oh, H. D. Lee, Todd. W. Hudnall, C. W. Bielawski, S. K. Banerjee, G. Bersuker, W. Y. Loh, and Wei-E Wang
J. H. Yum, H. S. Shin, J. Barnett, R. Hill, J. Oh, H. D. Lee, Todd. W. Hudnall, C. W. Bielawski, S. K. Banerjee, G. Bersuker, W. Y. Loh, and Wei-E Wang
Interfacial and electrical properties of HfO2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants
Interfacial and electrical properties of HfO2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants
Young-Chul Byun, Chandreswar Mahata, Chee-Hong An, Jungwoo Oh, Rino Choi and Hyoungsub Kim
Young-Chul Byun, Chandreswar Mahata, Chee-Hong An, Jungwoo Oh, Rino Choi and Hyoungsub Kim
Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs
Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs
Min Sang Park, Yonghyun Kim, Kyong Taek Lee, Chang Yong Kang, Byoung-Gi Min, Jungwoo Oh, Prashant Majhi, Hsing-Huang Tseng, Jack C. Lee, Sanjay K. Banerjee, Jeong-Soo Lee, Raj Jammy, Yoon-Ha Jeong
Min Sang Park, Yonghyun Kim, Kyong Taek Lee, Chang Yong Kang, Byoung-Gi Min, Jungwoo Oh, Prashant Majhi, Hsing-Huang Tseng, Jack C. Lee, Sanjay K. Banerjee, Jeong-Soo Lee, Raj Jammy, Yoon-Ha Jeong
(Invited) Integration Challenges of III-V Materials in Advanced CMOS Logic
(Invited) Integration Challenges of III-V Materials in Advanced CMOS Logic
Richard J. Hill, Jeff Huang,Wei Yip Loh, Taewoo Kim, M. H. Wong, D. Veksler, T. H. Cunningham, R. Droopad, Jungwoo Oh, Chris Hobbs, Paul D. Kirsch and Raj Jammy,
Richard J. Hill, Jeff Huang,Wei Yip Loh, Taewoo Kim, M. H. Wong, D. Veksler, T. H. Cunningham, R. Droopad, Jungwoo Oh, Chris Hobbs, Paul D. Kirsch and Raj Jammy,
Quantification of interfacial state density (D-it) at the high-k/III-V interface based on Hall effect measurements
Quantification of interfacial state density (D-it) at the high-k/III-V interface based on Hall effect measurements
Veksler, D., Nagaiah, P., Chidambaram, T., Cammarere, R., Tokranov, V., Yakimov, M., Chen, Y. - T., Huang, J., Goel, N., Oh, J., Bersuker, G., Hobbs, C., Kirsch, P. D., Oktyabrsky, S.
Veksler, D., Nagaiah, P., Chidambaram, T., Cammarere, R., Tokranov, V., Yakimov, M., Chen, Y. - T., Huang, J., Goel, N., Oh, J., Bersuker, G., Hobbs, C., Kirsch, P. D., Oktyabrsky, S.
Thermally Robust Ni Germanide Technology Using Cosputtering of Ni and Pt for High-Performance Nanoscale Ge MOSFETs
Thermally Robust Ni Germanide Technology Using Cosputtering of Ni and Pt for High-Performance Nanoscale Ge MOSFETs
Min-Ho Kang, Hong-Sik Shin, Jung-Ho Yoo, Ga-Won Lee, Jung-Woo Oh, Majhi, P., Jammy, R., Hi-Deok Lee, IEEE Transaction on Nanotechnology 11 4, 769-776 (2012) DOI
Min-Ho Kang, Hong-Sik Shin, Jung-Ho Yoo, Ga-Won Lee, Jung-Woo Oh, Majhi, P., Jammy, R., Hi-Deok Lee, IEEE Transaction on Nanotechnology 11 4, 769-776 (2012) DOI
Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal--Oxide--Semiconductor Field Effect Transistors
Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal--Oxide--Semiconductor Field Effect Transistors
Shin, Hong-Sik, Oh, Se-Kyung, Kang, Min-Ho, Kwon, Hyuk-Min, Oh, Jungwoo, Majhi, Prashant, Jammy, Raj, Lee, Ga-Won, Lee, Hi-Deok
Shin, Hong-Sik, Oh, Se-Kyung, Kang, Min-Ho, Kwon, Hyuk-Min, Oh, Jungwoo, Majhi, Prashant, Jammy, Raj, Lee, Ga-Won, Lee, Hi-Deok
Interfacial and electrical properties of HfO2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants
Interfacial and electrical properties of HfO2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants
Young-Chul Byun, Chandreswar Mahata, Chee-Hong An, Jungwoo Oh, Rino Choi and Hyoungsub Kim
Young-Chul Byun, Chandreswar Mahata, Chee-Hong An, Jungwoo Oh, Rino Choi and Hyoungsub Kim
High Mobility CMOS Transistors on Si/SiGe Heterostructure Channels
High Mobility CMOS Transistors on Si/SiGe Heterostructure Channels
Jungwoo Oh, Kanghoon Jeon, Se-Hoon Lee, Jeff Huang, PY Hung, Injo Ok, B.G. Min, Barry Sassman, Prashant Majhi, Paul Kirsch, Raj Jammy
Jungwoo Oh, Kanghoon Jeon, Se-Hoon Lee, Jeff Huang, PY Hung, Injo Ok, B.G. Min, Barry Sassman, Prashant Majhi, Paul Kirsch, Raj Jammy
Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability
Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability
J. H. Yum, G. Bersuker, J. Oh, and S. K. Banerjee
J. H. Yum, G. Bersuker, J. Oh, and S. K. Banerjee
Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor
Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor
Won-Ho Choi, Jungwoo Oh, Ook-Sang Yoo, In-Shik Han, Min-Ki Na, Hyuk-Min Kwon, Byung-Suk Park, P. Majhi, H.-H. Tseng, R. Jammy, Hi-Deok Lee
Won-Ho Choi, Jungwoo Oh, Ook-Sang Yoo, In-Shik Han, Min-Ki Na, Hyuk-Min Kwon, Byung-Suk Park, P. Majhi, H.-H. Tseng, R. Jammy, Hi-Deok Lee
Highly scaled (Lg ~ 56 nm) gate-last Si tunnel field-effect transistors
Highly scaled (Lg ~ 56 nm) gate-last Si tunnel field-effect transistors
Wei-Yip Loh, Kanghoon Jeon, Chang Yong Kang, Jungwoo Oh, Tsu-Jae King Liu, Hsing-Huang Tseng, Wade Xiong, Prashant Majhi, Raj Jammy, Chenming Hu
Wei-Yip Loh, Kanghoon Jeon, Chang Yong Kang, Jungwoo Oh, Tsu-Jae King Liu, Hsing-Huang Tseng, Wade Xiong, Prashant Majhi, Raj Jammy, Chenming Hu
Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors
Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors
J. Oh, J. Huang, I. Ok, S.-H. Lee, B. Sassman, K. Jeon, W.-Y. Loh, D.-H. Ko, P. D. Kirsch, P. Majhi, and R. Jammy
J. Oh, J. Huang, I. Ok, S.-H. Lee, B. Sassman, K. Jeon, W.-Y. Loh, D.-H. Ko, P. D. Kirsch, P. Majhi, and R. Jammy
Process driven oxygen redistribution and control in Si0.7Ge0.3/HfO2/TaN gate stack film systems
Process driven oxygen redistribution and control in Si0.7Ge0.3/HfO2/TaN gate stack film systems
Patrick S. Lysaght, Joseph C. Woicik, Jeff Huang, Jungwoo Oh, Byoung-Gi Min, and Paul D. Kirsch
Patrick S. Lysaght, Joseph C. Woicik, Jeff Huang, Jungwoo Oh, Byoung-Gi Min, and Paul D. Kirsch
Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate
Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate
Se-Hoon Lee, Prashant Majhi, Domingo A. Ferrer, Pui-Yee Hung, Jeff Huang, Jungwoo Oh, Wei-Yip Loh, Barry Sassman, Byoung-Gi Min, Hsing-Huang Tseng, Rusty Harris, Gennadi Bersuker, Paul D. Kirsch, Raj Jammy, and Sanjay K. Banerjee
Se-Hoon Lee, Prashant Majhi, Domingo A. Ferrer, Pui-Yee Hung, Jeff Huang, Jungwoo Oh, Wei-Yip Loh, Barry Sassman, Byoung-Gi Min, Hsing-Huang Tseng, Rusty Harris, Gennadi Bersuker, Paul D. Kirsch, Raj Jammy, and Sanjay K. Banerjee
Thermal Endurance and Microstructural Evolution of PtGe for High-Performance Nano-Scale Ge-on-Si MOSFETs
Thermal Endurance and Microstructural Evolution of PtGe for High-Performance Nano-Scale Ge-on-Si MOSFETs
Min-Ho Kang, Hong-Sik Shin, Se-Kyung Oh, Jung-Ho Yoo, Ga-Won Lee, Jung-Woo Oh, Prashant Majhi, Raj Jammy, and Hi-Deok Lee
Min-Ho Kang, Hong-Sik Shin, Se-Kyung Oh, Jung-Ho Yoo, Ga-Won Lee, Jung-Woo Oh, Prashant Majhi, Raj Jammy, and Hi-Deok Lee
High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
J. Oh, J. Huang, I. Ok, S.-H. Lee, P. Kirsch, R. Jammy
J. Oh, J. Huang, I. Ok, S.-H. Lee, P. Kirsch, R. Jammy
The IEICE (Institute of Electronics, Information and Communication Engineers) Transactions on Electronics E94-C 5, 712-716 (2011) DOI
The IEICE (Institute of Electronics, Information and Communication Engineers) Transactions on Electronics E94-C 5, 712-716 (2011) DOI
ON-State Performance Enhancement and Channel Direction Dependent Performance of Biaxial Compressive Strained Si0.5Ge0.5 Quantum Well pMOSFET along <110> and <100> Channel Directions
ON-State Performance Enhancement and Channel Direction Dependent Performance of Biaxial Compressive Strained Si0.5Ge0.5 Quantum Well pMOSFET along <110> and <100> Channel Directions
Se-Hoon Lee, Aneesh Nainani, Jungwoo Oh, Kanghoon Jeon, Paul D. Kirsch, Prashant Majhi, Leonard F. Register, Sanjay K. Banerjee and Raj Jammy
Se-Hoon Lee, Aneesh Nainani, Jungwoo Oh, Kanghoon Jeon, Paul D. Kirsch, Prashant Majhi, Leonard F. Register, Sanjay K. Banerjee and Raj Jammy
High-Mobility TaN/Al(2)O(3)/Ge(111) n-MOSFETs With RTO-Grown Passivation Layer
High-Mobility TaN/Al(2)O(3)/Ge(111) n-MOSFETs With RTO-Grown Passivation Layer
M. Jamil, J.Oh, S. Kaur, P. Majhi, E. Tutuc and S. K. Banerjee
M. Jamil, J.Oh, S. Kaur, P. Majhi, E. Tutuc and S. K. Banerjee
Trade-off Between Hot Carrier and Negative Bias Temperature Degradations in High Performance Si1-xGex pMOSFETs with High-k/Metal Gate Stack
Trade-off Between Hot Carrier and Negative Bias Temperature Degradations in High Performance Si1-xGex pMOSFETs with High-k/Metal Gate Stack
Won-Ho Choi, Chang-Young Kang, Jung-Woo Oh, Byoung Hun Lee, Prashant Majhi, Hyuk-Min Kwon, Raj Jammy , and Hi-Deok Lee
Won-Ho Choi, Chang-Young Kang, Jung-Woo Oh, Byoung Hun Lee, Prashant Majhi, Hyuk-Min Kwon, Raj Jammy , and Hi-Deok Lee
The Effect of a Si Capping Layer on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs
The Effect of a Si Capping Layer on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs
Min Sang Park, Kyong Taek Lee, Chang Yong Kang, Gil-Bok Choi, Hyun Chul Sagong, Chang Woo Sohn, Byoung-Gi Min, Jungwoo Oh, Prashant Majhi, Hsing-Huang Tseng, Jack C. Lee, Jeong-Soo Lee, Raj Jammy, and Yoon-Ha Jeong
Min Sang Park, Kyong Taek Lee, Chang Yong Kang, Gil-Bok Choi, Hyun Chul Sagong, Chang Woo Sohn, Byoung-Gi Min, Jungwoo Oh, Prashant Majhi, Hsing-Huang Tseng, Jack C. Lee, Jeong-Soo Lee, Raj Jammy, and Yoon-Ha Jeong
Thermal desorption of Ge native oxides and loss of Ge from the surface
Thermal desorption of Ge native oxides and loss of Ge from the surface
Jungwoo Oh and Joe Campbell
Jungwoo Oh and Joe Campbell
Si tunnel transistors with a novel silicided source and 46mV/dec swing
Si tunnel transistors with a novel silicided source and 46mV/dec swing
Kanghoon Jeon, Wei-Yip Loh, Pratik Patel, Chang Yong Kang, Jungwoo Oh, Anupama Bowonder, Chanro Park, CS Park, Casey Smith, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, Tsu-Jae King Liu, Chenming Hu
Kanghoon Jeon, Wei-Yip Loh, Pratik Patel, Chang Yong Kang, Jungwoo Oh, Anupama Bowonder, Chanro Park, CS Park, Casey Smith, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, Tsu-Jae King Liu, Chenming Hu
Prospect of tunneling green transistor for 0.1 V CMOS
Prospect of tunneling green transistor for 0.1 V CMOS
Chenming Hu, Pratik Patel, Anupama Bowonder, Kanghoon Jeon, Sung Hwan Kim, Wei Yip Loh, Chang Yong Kang, Jungwoo Oh, Prashant Majhi, Ali Javey, Tsu-Jae King Liu, Raj Jammy
Chenming Hu, Pratik Patel, Anupama Bowonder, Kanghoon Jeon, Sung Hwan Kim, Wei Yip Loh, Chang Yong Kang, Jungwoo Oh, Prashant Majhi, Ali Javey, Tsu-Jae King Liu, Raj Jammy
Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide
Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide
Ying-Ying Zhang, Soon-Yen Jung, Jungwoo Oh, Hong-Sik Shin, Se-Kyung Oh, Jin-Suk Wang, Prashant Majhi, Raj Jammy, and Hi-Deok Lee
Ying-Ying Zhang, Soon-Yen Jung, Jungwoo Oh, Hong-Sik Shin, Se-Kyung Oh, Jin-Suk Wang, Prashant Majhi, Raj Jammy, and Hi-Deok Lee
Novel Capacitorless Single-Transistor Charge-Trap DRAM (1T CT DRAM) Utilizing Electrons
Novel Capacitorless Single-Transistor Charge-Trap DRAM (1T CT DRAM) Utilizing Electrons
M. Günhan Ertosun, Kwan-Yong Lim, Chanro Park, Jungwoo Oh, Paul Kirsch, and Krishna C. Saraswat
M. Günhan Ertosun, Kwan-Yong Lim, Chanro Park, Jungwoo Oh, Paul Kirsch, and Krishna C. Saraswat
Improved thermal stability of Al2O3 /HfO2/Al2O3 high-k gate dielectric stack on GaAs
Improved thermal stability of Al2O3 /HfO2/Al2O3 high-k gate dielectric stack on GaAs
Dong Chan Suh, Young Dae Cho, Sun Wook Kim, Dae-Hong Ko, Yongshik Lee, Mann-Ho Cho, and Jungwoo Oh
Dong Chan Suh, Young Dae Cho, Sun Wook Kim, Dae-Hong Ko, Yongshik Lee, Mann-Ho Cho, and Jungwoo Oh
Improvement of Thermal Stability of Ni Germanide Using a Ni–Pt(1%) Alloy on Ge-on-Si Substrate for Nanoscale Ge MOSFETs
Improvement of Thermal Stability of Ni Germanide Using a Ni–Pt(1%) Alloy on Ge-on-Si Substrate for Nanoscale Ge MOSFETs
Ying-Ying Zhang, Jungwoo Oh, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Ga-Won Lee, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, and Hi-Deok Lee
Ying-Ying Zhang, Jungwoo Oh, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Ga-Won Lee, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, and Hi-Deok Lee
Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation
Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation
Wei-Yip Loh, Etienne, H., Coss, B., Ok, I., Turnbaugh, D., Spiegel, Y., Torregrosa, F., Banti, J., Roux, L., Pui-Yee Hung, Jungwoo Oh, Sassman, B., Radar, K., Majhi, P., Hsing-Huang Tseng, Jammy
Wei-Yip Loh, Etienne, H., Coss, B., Ok, I., Turnbaugh, D., Spiegel, Y., Torregrosa, F., Banti, J., Roux, L., Pui-Yee Hung, Jungwoo Oh, Sassman, B., Radar, K., Majhi, P., Hsing-Huang Tseng, Jammy
Influence of an Oxide Interlayer Dielectric (ILD) Capping Layer on the Thermal Stability of Ni Germanide for Nanoscale Ge MOSFETs
Influence of an Oxide Interlayer Dielectric (ILD) Capping Layer on the Thermal Stability of Ni Germanide for Nanoscale Ge MOSFETs
Ying-Ying Zhang, In-Shik Han, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Hong-Sik Shin, Ga-Won Lee, Jin-Suk Wang, Hi-Deok Lee, Jungwoo Oh, Prashant Majhi and Raj Jammy
Ying-Ying Zhang, In-Shik Han, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Hong-Sik Shin, Ga-Won Lee, Jin-Suk Wang, Hi-Deok Lee, Jungwoo Oh, Prashant Majhi and Raj Jammy
Suppression of Nickel-germanide (NiGe) Agglomeration and NiPenetration by Hydrogen (H) Ion Shower Doping in NiGe on a ThinEpitaxial Ge-on-Si substrate
Suppression of Nickel-germanide (NiGe) Agglomeration and NiPenetration by Hydrogen (H) Ion Shower Doping in NiGe on a ThinEpitaxial Ge-on-Si substrate
Min-Ho Kang, Ying-Ying Zhang, Kee-Young Park, Shi-Guang Li, Soon-Yen Jung, Ga-Won Lee, Jin-Suk Wang, Hi-Deok Lee, Jung-Woo Oh, Prashant Majhi, Raj Jammy and Kun-Joo Park
Min-Ho Kang, Ying-Ying Zhang, Kee-Young Park, Shi-Guang Li, Soon-Yen Jung, Ga-Won Lee, Jin-Suk Wang, Hi-Deok Lee, Jung-Woo Oh, Prashant Majhi, Raj Jammy and Kun-Joo Park
High Mobility SiGe p-Channel Metal-Oxide-Semiconductor Field Effect Transistors Epitaxially Grown on Si (100) Substrates with HfSiO2 High-k Dielectric and Metal Gate
High Mobility SiGe p-Channel Metal-Oxide-Semiconductor Field Effect Transistors Epitaxially Grown on Si (100) Substrates with HfSiO2 High-k Dielectric and Metal Gate
J. Oh, P. Majhi, C. Y. Kang, R. Jammy R. Joe, T. Sugawara, Y. Akasaka, T. Kaitsuka, T. Arikado, and M. Tomoyasu, Japanese Journal of
J. Oh, P. Majhi, C. Y. Kang, R. Jammy R. Joe, T. Sugawara, Y. Akasaka, T. Kaitsuka, T. Arikado, and M. Tomoyasu, Japanese Journal of
Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs
Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs
Ook Sang Yoo, Jungwoo Oh, Kyung Seok Min, Chang Yong Kang, B.H. Lee, Kyong Taek Lee, Min Ki Na, Hyuk-Min Kwon, P. Majhi, H-H Tseng, Raj Jammy, J.S. Wang, Hi-Deok Lee
Ook Sang Yoo, Jungwoo Oh, Kyung Seok Min, Chang Yong Kang, B.H. Lee, Kyong Taek Lee, Min Ki Na, Hyuk-Min Kwon, P. Majhi, H-H Tseng, Raj Jammy, J.S. Wang, Hi-Deok Lee
Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe
Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe
Huang, J., Kirsch, P. D., Oh, J., Lee, S. H., Majhi, P., Harris, H. R., Gilmer, D. C., Bersuker, G., Heh, D., Park, C. S., Park, C., Tseng, H.-H., Jammy, R.
Huang, J., Kirsch, P. D., Oh, J., Lee, S. H., Majhi, P., Harris, H. R., Gilmer, D. C., Bersuker, G., Heh, D., Park, C. S., Park, C., Tseng, H.-H., Jammy, R.
Thermal Immune Ni Germanide for High Performance Ge MOSFETs on Ge-on-Si Substrate Utilizing Ni0.95Pd0.05 Alloy
Thermal Immune Ni Germanide for High Performance Ge MOSFETs on Ge-on-Si Substrate Utilizing Ni0.95Pd0.05 Alloy
Ying-Ying Zhang, Jungwoo Oh, In-Sik Han, Zhun Zhong, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Hong-Sik Shin, Won-Ho Choi, Hyuk-Min Kwon, Wei-Yip Loh, Prashant Majhi, Raj Jammy, and Hi-Deok Lee
Ying-Ying Zhang, Jungwoo Oh, In-Sik Han, Zhun Zhong, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Hong-Sik Shin, Won-Ho Choi, Hyuk-Min Kwon, Wei-Yip Loh, Prashant Majhi, Raj Jammy, and Hi-Deok Lee
New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs
New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs
J.-W. Yang, H. R. Harris, G. Bersuker, C. Y. Kang, J. Oh, B. H. Lee, H.-H. Tseng, and R. Jammy
J.-W. Yang, H. R. Harris, G. Bersuker, C. Y. Kang, J. Oh, B. H. Lee, H.-H. Tseng, and R. Jammy
Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs
Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs
Ying-Ying Zhang, Jungwoo Oh, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Hong-Sik Shin, Ga-Won Lee, Jin-Suk Wang, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, Tae-Sung Bae, and Hi-Deok Lee
Ying-Ying Zhang, Jungwoo Oh, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Hong-Sik Shin, Ga-Won Lee, Jin-Suk Wang, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, Tae-Sung Bae, and Hi-Deok Lee
Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation
Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation
Ying-Ying Zhang, Chel-Jong Choi, Jungwoo Oh, In-Shik Han, Shi-Guang Li, Kee-Young Park, Hong-Sik Shin, Ga-Won Lee, Jin-Suk Wang, Prashant Majhi, Raj Jammy, and Hi-Deok Lee
Ying-Ying Zhang, Chel-Jong Choi, Jungwoo Oh, In-Shik Han, Shi-Guang Li, Kee-Young Park, Hong-Sik Shin, Ga-Won Lee, Jin-Suk Wang, Prashant Majhi, Raj Jammy, and Hi-Deok Lee
Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate
Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate
Ook Sang Yooa, Jungwoo Oh, Chang Yong Kang, Byoung Hun Lee, In Shik Han, Won-Ho Choi, Hyuk-Min Kwon, Min-Ki Na, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, Jin Suk Wang and Hi-Deok Lee
Ook Sang Yooa, Jungwoo Oh, Chang Yong Kang, Byoung Hun Lee, In Shik Han, Won-Ho Choi, Hyuk-Min Kwon, Min-Ki Na, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, Jin Suk Wang and Hi-Deok Lee
Effective surface passivation methodologies for high performance Ge pMOSFETs
Effective surface passivation methodologies for high performance Ge pMOSFETs
H. J. Na and J. C. Lee, D. Heh, P. Sivasubramani, P. D. Kirsch, J. W. Oh, P. Majhi, and B. H. Lee, S. Rivillon and Y. J. Chabal, R. Choi
H. J. Na and J. C. Lee, D. Heh, P. Sivasubramani, P. D. Kirsch, J. W. Oh, P. Majhi, and B. H. Lee, S. Rivillon and Y. J. Chabal, R. Choi
Demonstration of Lg ~55 nm PMOSFETs with Si/Si0.25Ge0.75/Si Channels with high Ion/Ioff (> 5×104) and controlled Short Channel Effect (SCE)
Demonstration of Lg ~55 nm PMOSFETs with Si/Si0.25Ge0.75/Si Channels with high Ion/Ioff (> 5×104) and controlled Short Channel Effect (SCE)
S.-H. Lee, P. Majhi, J. Oh, B. Sassman, C. Young, A. Bowonder, W.-Y. Loh, K. Choi, B.-J. Cho, H.-D. Lee, P. Kirsch, H. R. Harris, W. Tsai, S. Datta, H.-H. Tseng, S. K. Banerjee and R. Jammy
S.-H. Lee, P. Majhi, J. Oh, B. Sassman, C. Young, A. Bowonder, W.-Y. Loh, K. Choi, B.-J. Cho, H.-D. Lee, P. Kirsch, H. R. Harris, W. Tsai, S. Datta, H.-H. Tseng, S. K. Banerjee and R. Jammy
Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices
Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices
J. Oh, P. Majhi, R. Jammy, R. Joe, T. Sugawara, Y. Akasaka, T. Kaitsuka, T. Arikado, M. Tomoyasu
J. Oh, P. Majhi, R. Jammy, R. Joe, T. Sugawara, Y. Akasaka, T. Kaitsuka, T. Arikado, M. Tomoyasu
Effects of film stress modulation using TiN metal gate on stress engineering and its impact on device characteristics in metal gate/high-kappa dielectric SOI FinFETs
Effects of film stress modulation using TiN metal gate on stress engineering and its impact on device characteristics in metal gate/high-kappa dielectric SOI FinFETs
C. Y. Kang, J.-W. Yang, J. Oh, R. Choi, Y. Suh, H.C Floresca, J. Kim, M. Kim, B. Lee, H.-H. Tseng, R. Jammy
C. Y. Kang, J.-W. Yang, J. Oh, R. Choi, Y. Suh, H.C Floresca, J. Kim, M. Kim, B. Lee, H.-H. Tseng, R. Jammy
Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation
Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation
Jungwoo Oh, P. Majhi, H.-H. Tseng, and R. Jammy, D. Kelly, S. Banerjee, J. Campbell
Jungwoo Oh, P. Majhi, H.-H. Tseng, and R. Jammy, D. Kelly, S. Banerjee, J. Campbell
Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si MOS Capacitors and Field Effect Transistors
Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si MOS Capacitors and Field Effect Transistors
Jungwoo Oh, P. Majhi, H. Lee, S. Banerjee, R. Harris, H.-H. Tseng, and R. Jammy
Jungwoo Oh, P. Majhi, H. Lee, S. Banerjee, R. Harris, H.-H. Tseng, and R. Jammy
Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer
Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer
H.-S. Kim I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, J. Oh, Prashant Majhi
H.-S. Kim I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, J. Oh, Prashant Majhi
Flatband voltage instability characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer
Flatband voltage instability characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer
H.-S. Kim I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, J. Oh, Prashant Majhi
H.-S. Kim I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, J. Oh, Prashant Majhi
Demonstration of High Performance PMOSFETs Using Si/SixGe1-x/Si Quantum Wells with High-k/Metal Gate Stacks
Demonstration of High Performance PMOSFETs Using Si/SixGe1-x/Si Quantum Wells with High-k/Metal Gate Stacks
P. Majhi, P. Kalra, R. Harris, K. J. Choi, D. Heh, J. Oh, D. Kelly, R. Choi, B.J. Cho, S. Banerjee, W. Tsai1, H. Tseng, R. Jammy
P. Majhi, P. Kalra, R. Harris, K. J. Choi, D. Heh, J. Oh, D. Kelly, R. Choi, B.J. Cho, S. Banerjee, W. Tsai1, H. Tseng, R. Jammy
Phase Separation of Ni Germanide Formed on a Ge-on-Si Structure for Ge MOSFETs
Phase Separation of Ni Germanide Formed on a Ge-on-Si Structure for Ge MOSFETs
Ying-Ying Zhang, Jungwoo Oh, Tae-Sung Bae, Zhun Zhong, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Ga-Won Lee, Jin-Suk Wang,Prashant Majhi, Byoung-Hun Lee, Hsing-Huang Tseng, Yoon-Ha Jeong and Hi-Deok Lee
Ying-Ying Zhang, Jungwoo Oh, Tae-Sung Bae, Zhun Zhong, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Ga-Won Lee, Jin-Suk Wang,Prashant Majhi, Byoung-Hun Lee, Hsing-Huang Tseng, Yoon-Ha Jeong and Hi-Deok Lee
Improved electrical characteristics of Ge-on-Si field effect transistors with controlled Ge epitaxial layer thickness on Si substrates
Improved electrical characteristics of Ge-on-Si field effect transistors with controlled Ge epitaxial layer thickness on Si substrates
Jungwoo Oh, Prashant Majhi, Hideok Lee, Ooksang Yoo, Sanjay Banerjee, Chang Yong Kang, Ji-Woon Yang, Rusty Harris, Hsing-Huang Tseng, and Raj Jammy
Jungwoo Oh, Prashant Majhi, Hideok Lee, Ooksang Yoo, Sanjay Banerjee, Chang Yong Kang, Ji-Woon Yang, Rusty Harris, Hsing-Huang Tseng, and Raj Jammy
Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs
Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs
D. Q. Kelly, S. Lee, P. Kalra, R. Harris, J. Oh, P. Kirsch, S. K. Banerjee, P. Majhi, H. Tseng, R. Jammy
D. Q. Kelly, S. Lee, P. Kalra, R. Harris, J. Oh, P. Kirsch, S. K. Banerjee, P. Majhi, H. Tseng, R. Jammy
Thermal stability of nanoscale Ge MOS capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers
Thermal stability of nanoscale Ge MOS capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers
Jungwoo Oh, P. Majhi, C. Y. Kang, J.-W. Yang, H.-H. Tseng, and R. Jammy
Jungwoo Oh, P. Majhi, C. Y. Kang, J.-W. Yang, H.-H. Tseng, and R. Jammy
Improved Ge surface passivation with ultrathin SiOx enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack
Improved Ge surface passivation with ultrathin SiOx enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack
S. Joshi, C. Krug, D. Heh, H. J. Na, H. R. Harris, J. Oh, P. D. Kirsch, P. Majhi, B. H. Lee, H.-H. Tseng, R. Jammy, J. C. Lee, S. K. Banerjee
S. Joshi, C. Krug, D. Heh, H. J. Na, H. R. Harris, J. Oh, P. D. Kirsch, P. Majhi, B. H. Lee, H.-H. Tseng, R. Jammy, J. C. Lee, S. K. Banerjee
Effectiveness of SiGe buffer layers in reducing dark currents of Ge-on-Si photodetectors
Effectiveness of SiGe buffer layers in reducing dark currents of Ge-on-Si photodetectors
Zhihong Huang, Jungwoo Oh, Sanjay Banerjee, and Joe Campbell
Zhihong Huang, Jungwoo Oh, Sanjay Banerjee, and Joe Campbell
Gate Stack Technology for Nano Scale Devices: Current and Future Challenges
Gate Stack Technology for Nano Scale Devices: Current and Future Challenges
Byoung Hun Lee, Jungwoo Oh, Hsing Huang Tseng, Rajarao Jammy, and Howard Huff
Byoung Hun Lee, Jungwoo Oh, Hsing Huang Tseng, Rajarao Jammy, and Howard Huff
Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers
Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers
Z. Huang Jungwoo Oh, and J. C. Campbell
Z. Huang Jungwoo Oh, and J. C. Campbell
Thermal desorption of Ge native oxides and the loss of Ge from the surface
Thermal desorption of Ge native oxides and the loss of Ge from the surface
Jungwoo Oh and J. C. Campbell
Jungwoo Oh and J. C. Campbell
Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers
Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers
Jungwoo Oh, S. K. Banerjee, and J. C. Campbell
Jungwoo Oh, S. K. Banerjee, and J. C. Campbell
Interdigitated Ge p-i-n Photodetectors fabricated on Si substrate using graded SiGe buffer layers
Interdigitated Ge p-i-n Photodetectors fabricated on Si substrate using graded SiGe buffer layers
Jungwoo Oh, J. C. Campbell, S. Thomas, S. Bharatan, R. Thoma, C. Jasper, R. E. Jones, and T. E. Zirkle
Jungwoo Oh, J. C. Campbell, S. Thomas, S. Bharatan, R. Thoma, C. Jasper, R. E. Jones, and T. E. Zirkle
High-speed interdigitated Ge PIN photodetectors
High-speed interdigitated Ge PIN photodetectors
Jungwoo Oh, S. Csutak, and J. C. Campbell
Jungwoo Oh, S. Csutak, and J. C. Campbell
AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor using Pd/Ge Ohmic Contact
AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor using Pd/Ge Ohmic Contact
J-L. Lee, Y. T. Kim, Jung-Woo Oh, B.-T. Lee
J-L. Lee, Y. T. Kim, Jung-Woo Oh, B.-T. Lee
Selective Wet Etching of GaAs on Al0.24Ga0.76As for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT
Selective Wet Etching of GaAs on Al0.24Ga0.76As for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT
J-L. Lee, E.-A. Moon, Jung-Woo Oh
J-L. Lee, E.-A. Moon, Jung-Woo Oh
Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor
Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor
Jung-Woo Oh and J-L. Lee
Jung-Woo Oh and J-L. Lee