Publications

Preprints and Submitted Manuscripts

44. Ciocoiu, A., Khalifa, M. and Salfi, J. Towards computer-assisted design of hole spin qubits in quantum dot devices , arxiv:2209.12026, under review.

Refereed Journal Publications

43. Sarkar, A., Wang, Z., Rendell, M., Hendrickx, N., Veldhorst, M., Scappucci, G., Khalifa, M., Salfi, J., Saraiva, A., Dzurak, A.S., Hamilton, A.R., Culcer, D. Electrical operation of planar Ge hold spin qubits in an in-plane magnetic field. Physical Review B, 108, 245301 (2023). DOI: 10.1103/PhysRevB.108.245301.

42. Voisin, B., Salfi, J., Johnson, B.C., McCallum, J.C., Simmons, M.Y., Rogge, S. A solid-state quantum microscope for wavefunction control of an atom-based quantum dot device in silicon. Nature Electronics, 6, 409 (2023). DOI:0.1038/s41928-023-00979-z. News and views. 

41. Khalifa, M., and Salfi, J. Nonlinearity and Parametric Amplification of Superconducting Nanowire Resonators in Magnetic Field, Physical Review Applied, 19, 032024 (2023). DOI:10.1103/PhysRevApplied.19.034204.

40. Tankasala, A., Voisin, B., Kembrey, Z., Salfi, J., Hseuh, Y.-L., Osyka, E., Rogge, S., Rahman, R. (2022). Shallow dopant pairs in silicon: An atomistic full configuration interaction study. Physical Review B, 105, 155158 (2022). DOI: 10.1103/PhysRevB.105.155158

39. Voisin, B., Ng, K.S.H., Salfi, J., Usman, M., Wong, J.C., Tankasala, A, Johnson, B.C., McCallum, J.C., Hutin, L., Bertrand, B., Vinet, M., Valanoor, N., Simmons, M.Y., Rahman, R., Hollenberg, L.C.L., Rogge, S. (2022). Valley population of donor states in highly strained silicon. Materials for Quantum Technologies, 2, 025002, DOI:10.1088/2633-4356/ac5d1d.

38. Voisin, B., Salfi, J., Rahman, R., Rogge, S. (2021). Novel characterization of dopant-based qubits. MRS Bulletin, 46, 616-622. DOI: 10.1557/s43577-021-00136-x

37. Wang, Z., Marcellina, E., Hamilton, A.R., Rogge, S., Salfi, J., Culcer, D.  (2021). Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits. Nature Partner Journals: Quantum Information, 7, 54. DOI:10.1038/s41534-021-00386-2

36. Laucht, A., Hohls, F., Ubbelohde, N., Gonzalez-Zalba, M.F., Reilly, D.J., Stobbe, S., Schröder, T., Scarlino, P., Koski, J.V., Dzurak, A., Yang, C.H., Yoneda, J., Kuemmeth, F., Bluhm H., Pla, J., Hill, C., Salfi, J., Oiwa, A., Muhonen, J.T., Verhagen, E., LaHaye, M.D., Kim, H.H., Tsen, A.W., Culcer, D., Geresdi, A., Mol, J.A., Mohan, V., Jain, P.K., Baugh, J. (2021).  Roadmap on quantum nanotechnologies.  Nanotechnology, 32, 162003. DOI:10.1088/1361-6528/abb333

35. Kobayashi, T., Salfi, J., van der Heijden, J., Chua, C., House, M. G., Culcer, D., Hutchison, W.D., Johnson, B.C., McCallum, J.C., Riemann, H., Abrosimov, N.V., Becker, P., Pohl, H.-J., Simmons, M.Y., Rogge, S. 2021. Engineering long spin coherence times of spin-orbit qubits in silicon. Nature Materials  20, 38-42. DOI:10.1038/s41563-020-0743-3

34. Voisin, B., Bocquel, J., Tankasala, A., Usman, M., Salfi, J., Rahman, R., Simmons, M.Y., Hollenberg, L.C.L., Rogge, S., (2020) Valley interference and spin exchange at the atomic scale in silicon. Nature Communications, 11, 6124. DOI:10.1038/s41467-020-19835-1

33.Ng, K, Voisin, B., Johnson, B., McCallum, J., Salfi, J. Rogge, S. Scanned single-electron probe inside a silicon electronic device. 2020. ACS Nano, 14, 8, 9449–9455. DOI:10.1021/acsnano.0c00736

32. Bayat, A., Voisin, B., Buchs, G., Salfi, J., Bose, S., Rogge, S., Certification of spin-based quantum simulators. 2020. Physical Review A, 101, 052344. DOI:10.1103/PhysRevA.101.052344

31. Philippopoulos, P., Chesi, S., Salfi, J., Rogge, S., Coish, W. A., Hole spin-echo envelope modulations.  2019. Physical Review B, 100, 125402. DOI:10.1103/PhysRevB.100.125402.

30. van der Heijden, J., Kobayashi, T., House, M. G., Salfi, J., Barraud, S., Lavieville, R., Simmons, M.Y., Rogge, S. Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor. 2018. Science Advances, 4, eeat9199. DOI:10.1126/sciadv.aat9199.

29. Salfi, J., Voisin, B., Tankasala, A., Bocquel, J., Usman, M., Simmons, M. Y., Hollenberg, L. C. L., Rogge, S. Valley filtering and spatial maps of coupling between silicon donors and quantum dots. 2018. Physical Review X, 8, 031049. DOI:10.1103/PhysRevX.8.031049.

28. Abadillo-Uriel, J.C., Salfi, J., Hu, X., Rogge, S., Calderòn M. J., Culcer, D. Entanglement control and magic angles for acceptor qubits in Si. 2018. Applied Physics Letters, 113, 012103. DOI:10.1063/1.5036521.

27. Tankasala, A., Salfi, J., Bocquel, J., Voisin, B., Usman, M., Klimeck, G., Simmons, M. Y., Hollenberg, L. C. L., Rogge, S., Rahman, R. Two-electron states of group V donor in silicon from atomistic full configuration interaction. 2017. Physical Review B, 97, 195301, 2018. DOI:10.1103/PhysRevB.97.195301.

26. Usman, M., Voisin, B., Salfi, J., Rogge, S., Hollenberg, L. C. L. Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon. 2017. Nanoscale, 9, 17013-17019. DOI:10.1039/C7NR05081J.

25. Usman, M., Bocquel, J., Salfi, J., Voisin, B., Tankasala, A., Rahman, R., Simmons, M. Y., Rogge, S., Hollenberg, L.C.L Spatial metrology of dopants in silicon with exact lattice site precision. 2016. Nature Nanotechnology, 11, 763-769. DOI:10.1038/nnano.2016.83.

24. Salfi, J., Mol, J. A., Culcer, D., Rogge, S. Charge-insensitive single-atom spin-orbit qubit in silicon. 2016. Physical Review Letters, 116, 246801. 10.1103/PhysRevLett.116.246801.

2015 to 2011 (Postdoc, UNSW, Centre for Quantum Computation and Communication Technology)

23. Salfi, J., Tong, M., Rogge, S., Culcer, D. Quantum computing with acceptor spins in silicon. Nanotechnology, 27(24), 244001. DOI:10.1088/0957-4484/27/24/244001. 

22. Salfi, J., Mol, J. A., Rahman, R., Klimeck, G., Simmons, M. Y., Hollenberg, L. C. L. and Rogge, S. Quantum simulation of the Hubbard model with dopant atoms in silicon. 2016. Nature Communications, 7, 11342. DOI: 10.1038/ncomms11342.

21. Saraiva, A. L., Salfi, J., Bocquel, J., Voisin, B., Rogge, S., Capaz, R. B., Calderòn M. J., Koiller, B. Donor wavefunctions in Si gauged by STM images. 2016. Physical Review B. 93, 045303. DOI:10.1103/PhysRevB.93.045303.

20. Mol, J. A., Salfi, J., Rahman, R., Miwa, J. A., Klimeck G., Simmons, M. Y. and Rogge, S. 2015. Interface-induced heavy-hole/light-hole splitting of acceptors in silicon. Applied Physics Letters. 106, 203110. DOI:10.1063/1.4921640. 

19. Agundez, R. R., Salfi, J., Rogge, S., Blaauboer, M. Local Kondo temperatures in atomic chains. 2015. Phys. Rev. B. Rapid Comms, 91, 041117(R). DOI:10.1103/PhysRevB.91.041117.

18. Voisin, B.,  Salfi, J., Bocquel, J., Rogge, S.  Spatially resolved resonant tunneling on single atoms in silicon. 2015. Journal of Physics: Condensed Matter, 27, 154203. Single dopants special issue. DOI:10.1088/0953-8984/27/15/154203.

17. Usman, M.,  Rahman, R., Salfi, J., Bocquel, J., Voisin, B., Rogge, S., Klimeck, G., Hollenberg, L. C. L.  Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory. 2015. Journal of Physics: Condensed Matter, 27, 154207. Single dopants special issue DOI:10.1088/0953-8984/27/15/154207.

16. Salfi, J., Mol, J. A., Rahman, R., Klimeck, G., Simmons, M. Y., Hollenberg, L. C. L., Rogge, S. Spatially resolving valley quantum interference of a donor in silicon.  2014. Nature Materials., 14(6), 605-609. DOI:10.1038/nmat3941.

15. van der Heijden, J., Salfi, J., Mol, J.A., Verduijn, J., Tettamanzi, G. C., Hamilton, A., Collaert, N., and Rogge, S.  Probing the spin states of a single acceptor atom.  2014. Nano Letters, 14, 1492-1496. DOI:10.1021/nl4047015.

14. Miwa, J. A., Mol, J. A., Salfi, J, Rogge S. and Simmons, M. Y.  Transport through a single donor in p-type silicon. 2013. Applied Physics Letters, 103(4), 043106, DOI:10.1063/1.4816439.    

13. Mol, J. A., Salfi, J., Miwa, J. A., Simmons, M. Y. and Rogge, S. Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants. 2013. Physical Review B, 87(24), 245417. DOI:10.1103/PhysRevB.87.245417.

2011 and prior (PhD, University of Toronto)

12. Salfi, J., Stewart, C., Nair, S.V., Sun, Y., Rusli, Lin, F. K., Yu, M., Singh, N., Chen, C. Y., de Sousa, C. F. and Ruda, H. E. Antenna-enhanced and polarisation sensitive photoresponse in arrays of silicon P-i-N nanowires. 2013. New Journal of Physics, 15, 093029. DOI:10.1088/1367-2630/15/9/093029.

11. Salfi, J., Nair, S.V., Savelyev, I. G., Blumin, M, and Ruda, H. E.  Evidence for nonlinear screening and enhancement of scattering by a single Coulomb impurity for dielectrically confined electrons in InAs nanowires. 2012. Phys. Rev. B, 85(23), 235316. DOI:10.1103/PhysRevB.85.235316.

10. Kavanagh, K. L., Salfi, J., Savelyev, I., Blumin, M. and Ruda, H. E. Transport and strain relaxation in wurtzite InAs-GaAs core-shell heterowires. 2011. Applied Physics Letters, 98(15), 152103. Featured in V. J. Nano. DOI:10.1063/1.3579251.

9. Salfi, J., Paradiso, N., Roddaro, S., Heun, S., Nair, S. V., Savelyev, I. G., Blumin, M., Beltram, F. and Ruda, H. E. Probing the gate-voltage-dependent surface potential of individual InAs nanowires using random telegraph signals. 2011. ACS Nano, 5(3), 2191-2199. DOI:10.1021/nn1033967.    

8. Sun, Y. S., Rusli, Yu, M. B., Salfi, J., Souza, C., Ruda, H. E., Singh, N., Lin, F. K., Lo, P., and Kwong, D. L. Electrical characteristics and photocurrent spectral response of Si nanowires p-i-n junctions. 2011. Optics Express, 19(6), 5464--5469. DOI:10.1364/OE.19.005464.    

7. Salfi, J., Savelyev, I. G., Blumin, M., Nair, S. V. and Ruda, H. E. Direct observation of single-charge-detection capability of nanowire field-effect transistors. 2010. Nature Nanotechology, 5(10), 737-741. DOI:10.1038/nnano.2010.180.

6. Li, Z., Salfi, J., De Souza, C., Sun, P., Nair, S. V. and Ruda, H. E. Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition. 2010. Applied Physics Letters, 97(6), 063510. Featured in V. J. Nano. DOI:10.1063/1.3478555.

5. Philipose, U., Sapkota, G., Salfi, J. and Ruda, H. E. Influence of growth temperature on the stoichiometry of InSb nanowires grown by vapor phase transport. 2010. Semiconductor Science and Technology, 25(7), 075004. Editor's Choice. DOI:10.1088/0268-1242/25/7/075004.

4. Salfi, J., Roddaro, S., Ercolani, D., Sorba, L., Savelyev, I., Blumin, M., Ruda, H. E. and Beltram, F. Electronic properties of quantum dot systems realized in semiconductor nanowires. 2010. Semiconductor Science and Technology, 25(2), 024007. (Special issue on semiconductor nanowires) DOI:10.1088/0268-1242/25/2/024007.

3. Ruda, H., Salfi, J., Philipose, U., Saxena, A., Lau, K. T., Xu, T., Li, Z., de Souza, C., Aouba, S., Yang, S. X., Sun, P., Nair, S. V. and Fernandes, C. Transport and optical response of single nanowires. 2009. Journal of Materials Science - Materials in Electronics, 20, 480--486.DOI: 10.1007/s10854-008-9686-1.        

2. Salfi, J., Philipose, U., Aouba, S., Nair, S. V., and Ruda, H. E. Electron transport in degenerate Mn-doped ZnO nanowires. 2007. Applied Physics Letters, 90(3), 032104. DOI:10.1063/1.2431788.

1. Salfi, J., Philipose, U., De Souza, C. F., Aouba, S. and Ruda, H. E. Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photo-detection. 2006. Applied Physics Letters, 89(26), 261112. DOI:10.1063/1.2424653.