Google Scholar Profile

Journals

1. Md. Mayrazul Hoque, Md. Abdullah Zubair, Redwan N. Sajjad, "Formation of wide-bandgap, highly transparent and compact Cd1-xZnxS films with dynamically controlled pH in chemical bath deposition", Journal of Materials Chemistry C, vol. 11, pp. 6360-6375, 2023. 

2. Mohammad Muntasir Hassan, Khalid H. Refat, Md. Zunaid Baten and Redwan N. Sajjad, "Energy saving potential of photovoltaic windows: Impact of shading, geography and climate", Solar Energy, vol. 240, pp. 342, 2022.  

3. Eymana Maria, Ajanta Saha, M. Ryyan Khan, Md. Abdullah Zubair, Md. Zunaid Baten and Redwan N. Sajjad, "Carrier transport and performance estimate of semi-transparent photovoltaics: CuIn_1-xGa_xSe_2 as a case study", Journal of Applied Physics, vol. 130, pp. 173106, 2021.  

4. Khalid H. Refat and Redwan N. Sajjad, “Prospect of achieving net-zero energy building with semi-transparent photovoltaics: A device to system level perspective”, Applied Energy, vol. 279, pp. 115790, 2020.

5. Redwan N. Sajjad "Material selection for semi-transparent photovoltaics based on an electro-opto-thermal figure of merit", under review (2022). 

6. Xiaodong Zhou, Alexander Kerelsky, Mirza M. Elahi, Dennis Wang, K. M. Masum Habib, Redwan N. Sajjad, Pratik Agnihotri, Ji Ung Lee, Avik W. Ghosh, Frances M. Ross and Abhay N. Pasupathy, “Atomic scale characterization of graphene p-n junction for its electron-optical applications”,  ACS Nano, vol. 13, no. 2, pp. 2558 (2019).  

7. Redwan N. Sajjad, Ujwal Radhakrishna and Dimitri Antoniadis, “A tunnel FET compact model including non-idealities with Verilog implementation”, Solid State Electronics, vol. 150, pp. 16  (2018). 

8. Christian Schulte-Braucks, Rahul Pandey, Redwan N. Sajjad, Dimitri Antoniadis, Suman Datta, et. al., "Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors", IEEE Transactions on Electron Devices, vol. 64, no. 10, pp. 4354 (2017). 

9. Redwan N. Sajjad, Winston Chern, Judy Hoyt and Dimitri Antoniadis, “Trap assisted tunneling and its impact on subthreshold swing in tunnel field effect transistors”, IEEE Transactions on Electron Devices, vol. 63, no. 11, pp. 4380 (2016).

10. Amirhasan Nourbakhsh, Ahmad Zubair, Redwan N. Sajjad, Amir Tavakkoli, Wei Chen, Shiang Fang, Xi Ling, Jing Kong, Mildred Dresselhaus, Efthimios Kaxiras, Karl Berggren, Dimitri Antoniadis, Tomás Palacios, “MoS2 Field-Effect transistor with sub-10 nm channel length”, Nano Letters, vol. 16, no. 12, pp. 7798-7806 (2016).    

11. K. M. Masum Habib, Redwan N. Sajjad and Avik Ghosh, “Modified Dirac Hamiltonian for efficient quantum mechanical simulations of micron sized devices”, Applied Physics Letters, vol. 108, 113105 (2016). 

12. K. M. Masum Habib, Redwan N. Sajjad and Avik Ghosh, “Chiral tunneling of topological states: towards the efficient generation of spin current using spin-momentum locking”, Physical Review Letters, vol. 114, 176801 (2015).

13. Redwan N. Sajjad, Frank Tseng, K. M. Masum Habib, Avik Ghosh, “Quantum transport at the Dirac point: Mapping out the minimum conductivity from pristine to disordered graphene”, Physical Review B, vol. 92, 205408 (2015). 

14. Redwan N. Sajjad and Avik Ghosh, “Manipulation of chiral tunneling by gate geometry: switching in graphene with transmission gaps”, ACS Nano, vol. 7, no. 11, 9808 (2013).

15. Redwan N. Sajjad, Carlos Polanco and Avik Ghosh, “Atomistic deconstruction of current flow in graphene based hetero-junctions”, Journal of Computational Electronics (invited), vol. 12, no. 2, 232 (2013).  

16. Redwan N. Sajjad, S. Sutar, J. Lee and Avik Ghosh, “Manifestation of Chiral tunneling at a tilted graphene p-n junction”, Physical Review B, vol. 86, 155412 (2012).

17. Redwan N. Sajjad and Avik Ghosh, “High Efficiency Switching Using Graphene based Electron ‘Optics’”, Applied Physics Letters, vol. 99, no. 12, 123101(2011).

18. Khairul Alam and Redwan N. Sajjad, “Electronic Properties and Orientation-Dependent Performance of InAs Nanowire Transistors”, IEEE Transactions on Electron Devices, vol. 57, no. 11, 2880 (2010).

19. Redwan N. Sajjad and Khairul Alam, “Electronic properties of a strained <100> silicon nanowire”, Journal of Applied Physics, vol. 105, no. 4, 044307 (2009). 

20. Redwan N. Sajjad, et. al.,  “Parametrization of silicon nanowire effective mass model from sp3d5s* orbital basis calculations”, Semiconductor Science and Technology, vol. 24, no. 4, 045023 (2009).

Conferences

1. 1. Md. Mayrajul Hoque, Md. Abdullah Zubair, Redwan N. Sajjad, “Enhancing average visible transmittance of CdS buffer layer for CuInGaSe based semi-transparent photovoltaics: metal ion substitution approach”, 12th IEEE International Conference on Electrical and Computer Engineering (ICECE), Dhaka, December, 2022. 

2. Md. Mahmudul Hasan Shihab, Mohammad Didarul Islam, Redwan N. Sajjad and Mohammad Ryyan Khan, “A cross-country techno-economic assessment of soiling affected solar farms in Bangladesh”, 12th IEEE International Conference on Electrical and Computer Engineering (ICECE), Dhaka, December, 2022.

3. Md. Didarul Islam, Md. Aminul Islam, Redwan. N. Sajjad, M. Ryyan Khan, “A Techno-Economic Analysis of Bifacial Panels Under Soiling in South-Asian Urban Area”, IEEE Region 10 Symposium (Tensymp), Mumbai, 2022.

4. Mayrajul Hoque, Md. Zunaid Baten, Md. Abdullah Zubair, Redwan N. Sajjad, "Optimizing chemical bath deposition for cadmium sulfide for CIGS based semi-transparent photovoltaics", International Conference on Telecommunication and Photonics (ICTP), Dhaka,  2021. 

5. Jabir Bin Jahangir, Md. Al-Mahmud, Md. Shahadat Sarker Shakir, Md. Mahamudul Hasan Mithhu, Tahmina Ahmed Rima, Redwan N. Sajjad, M. Ryyan Khan, “Prediction of Yield, Soiling Loss, and Cleaning Cycle: A Case Study in South Asian Highly Construction-Active Urban Zone, IEEE 47th PVSC, 2020.

6. Amirhasan Nourbakhsh, Ahmad Zubair, Redwan N. Sajjad, Amir Tavakkoli, Xi Ling, Jing Kong, Mildred Dresselhaus, Efthimios Kaxiras, Karl Berggren, Dimitri Antoniadis, Tomás Palacios, “Scaling and carrier transport properties of monolayer MoS2 transistors”, American Physical Society (APS) March meeting, New Orleans, 2017.

7. R. Pandey, C. Schulte-Braucks, R. N. Sajjad, M. Barth, R. Ghosh, B. Grisafe, P. Sharma, N. von den Driesch, A. Vohra, B. Rayner, R. Loo, S. Mantl, D. Buca, C-C. Yeh, C-H. Wu, W. Tsai, D. Antoniadis and S. Datta, "Performance Benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 Hetero-junction Tunnel FETs for Low Voltage Logic ", International Electron Devices Meeting (IEDM), San Francisco, 2016. 

8. Redwan N. Sajjad and Dimitri Antoniadis, "A compact model for Tunnel FET for all operation regimes including trap assisted tunneling", 74th Device Research Conference, Delaware, 2016.

9. A. Nourbakhsh, A. Zubair, A. Tavakkoli, R. Sajjad, X. Ling, M. Dresselhaus, J. Kong, K. K. Berggren, D. Antoniadis and T. Palacios, “Monolayer MoS2 FETs with Sub-10 nm Channel Formed by Directed Self-Assembly”,  Symposia on VLSI Technology, Honolulu, 2016. 

10. Redwan N. Sajjad, Winston Chern, Ujwal Radhakrishna, Dimitri Antoniadis, “Modeling of non-idealities to predict performance limits of tunnel field effect transistors”,  SRC TECHCON, Austin, 2016 (won the best in session award). 

11. Redwan N. Sajjad, K. M. Masum Habib, Avik Ghosh, "A quantum mechanics inspired simulation platform for nanoscale devices", SRC TECHCON, Austin, 2014. 

12. Redwan N. Sajjad, K. M. Masum Habib, Frank Tseng, Avik Ghosh, “Tunneling through graphene and topological insulators in presence of pn junction: transport properties and device prospects”, American Physical Society (APS) March meeting, Denver, 2014.

13. Redwan N. Sajjad, Frank Tseng, Avik Ghosh, “Conductance of graphene: role of metal contact, charge puddles and differential gating”, 72st Device Research Conference, Santa Barbara, 2014.

14. Redwan N. Sajjad, Avik Ghosh, “Novel switching mechanism through angle dependent transmission in graphene pn junction, 71st Device Research Conference, Notre Dame, 2013. 

15. Redwan N. Sajjad, Chenyun Pan, Azad Naeemi, Avik Ghosh, "Novel switching mechanism with graphene pn junctions: device physics and circuit analysis", SRC TECHCON, Austin, 2013. 

16. Redwan N. Sajjad, Chenyun Pan, Azad Naeemi, Avik Ghosh, “Negative refractive index electron optics', pseudospintronics and chiral tunneling in graphene pn junction--beating the Landauer switching limit?” American Physical Society (APS) March meeting, Baltimore, 2013.

17. Redwan N. Sajjad, Avik Ghosh, “Klein, anti-Klein tunneling and pseudo-spintronics in graphene heterojunctions”, American Physical Society (APS) March meeting, Boston, 2012.

18. Redwan N. Sajjad, F. Tseng, Avik Ghosh, “Modeling and visualizing electrons in graphene”, 15th International Workshop on Computational Electronics (IWCE), Madison, 2012.

19. Redwan N. Sajjad, F. Tseng, D. Unluer, Avik Ghosh, “Graphene electronics and electron optics: quantum transport and device opportunities”, Graphene International Conference, Belgium, 2012.

20. Redwan N. Sajjad and Avik Ghosh, “Tunable transmission gap in graphene p-n junction”, International Semiconductor Device Research Symposium (ISDRS), Maryland, 2011.

21. Redwan N. Sajjad, Sishir Bhowmick and Quazi D. M. Khosru, “Cross-sectional shape effects on the bandstructures of Silicon nanowires”, IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong-Kong, December, 2008. 

22. Sishir Bhowmick, Redwan N. Sajjad and Quazi D. M. Khosru, “Effects of gate length on the performance of a top gate Silicon Nanowire on Insulator (SOI) transistor”, IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong-Kong, December, 2008. 

23. Redwan N. Sajjad, Khairul Alam and Quazi D. M. Khosru, “Effects of uniaxial strain on the bandstructures of silicon nanowires”, International Conference on Electrical and Computer Engineering (ICECE), Dhaka, 2008.

Simulation tools

1. Redwan N. Sajjad, Ujwal Radhakrishna and Dimitri Antoniadis – “MIT TFET compact model including non-idealities”, nanoHUB. doi:10.4231/D3XW47X6W.  

Patents

1. K. M. Masum Habib, Redwan N. Sajjad and Avik Ghosh, “Extremely Large Spin Hall Angle in Topological Insulator PN Junction”, US patent 9,865,713, 2018. 

2. Redwan N. Sajjad and Avik Ghosh, "Graphene devices including angular split gates", US patent 9,570,559 B2, February 2017.