I am not sure I quite understand what you are looking for. Are you wanting a model of the NTE/ECG replacement components for these transistors? If the latter is the case, then the models contained in the database (at least in my database) should be the same as any replacements or so close it shouldn't really make too much of a difference.
Edit: I see now that there are some that are not there. I do have the model to the 2219 transistor for you that I will post. This comes from Multisim 2001 Parts Database so it should work. I do not have the others though.
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A small-signal equivalent circuit for a junction transistor is presented which is applicable to alloy or grown types of p-n-p or n-p-n transistors, and which is valid from d-c up to twice the cutoff frequency. The equivalent circuit is in the form of four short-circuit admittances, each of which can be represented by a simple network of lumped elements constant with frequency. The derivation is based on physical principles and takes into account base widening and collector barrier capacitance. Equations for the equivalent circuit element values are given either in terms of physical parameters or in terms of six practical measurements. The four-admittance representation is given both for common-emitter and common-base connections, and a relation between the common- emitter and the common-base cutoff frequencies is derived and experimentally verified. Measurements of the real and imaginary parts of the four admittances as functions of frequency for several transistors show excellent agreement with the values predicted by the equivalent circuit.
The output and forward transfer impedance of an organic field-effect transistor have been measured by a lock-in amplifier technique. The small-signal ac response of a pentacene FET, under dc bias, is used to construct the equivalent circuit. The output impedance parameters are numerically simulated using Bode plot analysis and the deviations at low frequency are modeled with contact impedance of the source-drain channel. The ac current generator at the output is estimated along with the gate capacitances.
An extraction technique for determining the small-signal equivalent circuit model of an InP/GaInAs heterojunction bipolar transistor is presented. The equivalent circuit includes the extrinsic base collector capacitance and extrinsic base resistance. It is clearly indicated which elements are uniquely determined, and which elements are estimated.
Field effect transistor (FET) based terahertz rectifiers are promising candidates for sensitive, room-temperature operated high speed (THz) detectors, e.g. in communication, medical, biochemical, security, quality control applications, or beam diagnostic applications at particle accelerators. This paper investigates the equivalent circuit in the intermediate frequency band from 0.1 to 65 GHz with S-parameter measurements in order to enable implementation with high speed post detection electronics. Preliminary results are obtained by de-embedding On-Wafer measurements and compared with theoretical expectations from hall measurements and a simplified equivalent circuit. The knowledge of the channel behavior and impedance is mandatory for impedance matching to IF circuitry in advanced detector designs.
To use this transistor safely, it is recommended not to use it at maximum rating and always stay below 20% as a safe aspect. The maximum collector current of the transistor is 1A so do not drive load of more than 800mA or 0.8A. The maximum collector to emitter voltage is 32V therefore do not drive load of more than 26V. Use a suitable heatsink with the transistor and always store or operate it in temperature above -55 C and below +70 C. 589ccfa754
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