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Results: Overall, we observed an increased HCC risk among subjects carrying XRCC1 codon 399 Gln/Gln, Arg/Gln and Gln/ Gln+Arg/Gln genotypes (OR=1.20, 95%CI: 1.05-1.38, OR=1.16, 95%CI: 1.05-1.28, and OR=1.14, 95%CI: 1.04-1.24, respectively) based on 20 studies including 3374 cases and 4633 controls. In subgroup analysis, we observed an increased risk of XRCC1 codon 399 Gln/Gln, Arg/Gln and Gln/Gln+Arg/Gln polymorphisms for HCC in hospital-based study (OR=1.25, 95%CI: 1.03-1.51, OR=1.21, 95%CI: 1.07-1.36 and OR=1.18, 95%CI: 1.06-1.31, respectively) and in Asian population (OR=1.19, 95%CI: 1.03-1.38, OR=1.17, 95%CI: 1.04-1.30 and OR=1.14, 95%CI: 1.04-1.25, respectively). Limiting the analysis to the studies with controls in agreement with Hardy-Weinberg equilibrium (HWE), we observed an increased HCC risk among Gln/Gln, Arg/Gln and Gln/ Gln+Arg/Gln genotype carriers (OR=1.17, 95%CI: 1.05-1.29, OR=1.12, 95%CI: 1.00-1.25 and OR=1.11, 95%CI: 1.02-1.21, respectively).

Schottky barrier diodes were produced from -Ga2O3 epitaxial wafers for X-ray detection. The devices were fabricated from a bulk Sn-doped (001) n-type Ga2O3 substrate with a Si-doped epitaxial layer grown by hydride vapor phase epitaxy (HVPE). The Schottky diodes were fabricated with circular Schottky metal contacts with diameters ranging from 50 to 1500 m and square metal contacts ranging from 100100 m2 to 16001600 m2. The devices were characterized for their electrical performance first including forward current-voltage (FIV), reverse current-voltage (RIV), and capacitance-voltage (CV) measurements. The best device showed a breakdown voltage of -804 V and the devices tested had an average ideality of 1.12 eV. The devices exhibited a clear response to X-rays even at zero bias and a linear response of detector signal to the X-ray dose rate. The sensitivity and the lowest limit of detection for X-ray by Ga2O3 epitaxial Schottky detectors were discussed and determined.