WG3 group using existing foundries will take care of Si, GaAs and GaN engineering, design of VCOs, detectors and matrices and high frequency electronics. Despite of their great application promise, THz technologies have not been scaled up and introduced into mass production. One of the main reasons is the lack of speed of operation in existing THz imaging systems. They are often based on a single source/single detector scanning design with either moving beam or moving object. Modern online quality and security control requires a high-speed image acquisition that can be obtained only by multi-pixel arrays systems of THz sources and detectors – that can be realized only by IC engineering. Another important limitation of THz imaging is a substantial cost of the existing systems and devices. A cost reduction of THz sources and detectors may be achieved only by a massive use of innovative semiconductor industry based components. IC design team will be composed of experts in design of high frequency integrated circuits who will advise and follow the fabrication of THz ICs containing transistors, Schottky diodes, filters, amplifiers and oscillators.