Molecular beam epitaxy is one of the most powerful techniques in the exploration of quantum materials, enabling atomic-level thickness control and the growth of high-purity crystals. We aim to discover novel materials and harness properties beyond those of natural bulk crystals by leveraging degrees of freedom such as dimensionality reduction through thickness control, epitaxial strain from lattice mismatch, and the construction of heterostructures combining dissimilar materials. 

We investigate quantum transport phenomena originating from non-trivial band structures in topological materials. Our research focuses on elucidating exotic transport functionalities including topologically-protected dissipationless conduction, electrical control of spin and chirality, and giant magnetoresistance effect, to establish a fundamental academic framework for next-generation electronic devices based on band topology and quantum geometry.

Membrane technology, which involves exfoliating and freestanding thin-film crystals from their growth substrates, enables the realization of artificial structures that transcend the limitations of conventional epitaxial growth. By introducing giant strain or strain gradients on flexible substrates, and constructing artificial hetero- or twisted structures,  we investigate emergent phenomena driven by effective electromagnetic fields and many-body interactions. By treating spatial non-uniformity as a primary control parameter, we aim to pioneer next-generation quantum functions unavailable in conventional flat crystal planes.