Bridging the CPU-Memory Gap
Working with nature for better memory electronics
Memory technology has developed much slowly in the last twenty years when compared to logic. This has opened the CPU-Memory Gap, a memory driven bottle-neck in computing abilities.
Superior memory devices, such as in SlideTro's technology with efficient energy usage and fast read/write speeds, shows promise in closing the gap. This technology will disrupt the computing industry and push forward emerging technologies of Machine Learning, Artificial Inteligence and Neuromorphic Computing.
SlideTro patented technology allows the control of interfacial polarization in 2D materials by layer on layer sliding. The 2D materials layered structure is only 2nm thick. The technology enables ultra-fast and energy efficient devices with high read/write cycle durability.
Want to learn more? Read about it in Nature and Science papers.
SlideTro technology cuts the memory bit footprint by introducing a revolutionary "single device per bit" technology to replace the "6 transistors per bit" in SRAM. The SlideTro device still maintains the same fast performance as the current SRAM devices with the added value of low energy and non-volatility.