As a group belonging to Center for Neuromorphic Engineering in Korea Institute of Science and Technology (KIST), our research interest is to study and develop next-generation electronic materials with advanced functionalities toward post-Si era. Among candidate materials, we are especially interested in materials including chalcogen atoms (S, Se, Te), which are called as chalcogenide, because those materials have shown exotic electrical properties with high application potential. Some examples of such (electrically and optically) important chalcogenide materials/devices/applications are following.
Amorphous chalcogenide (GeSe) / Ovonic threshold switch / neuromorphic devices
Amorphous chalcogenide (Ge2Sb2Te5) / phase-change memory / neuromorphic devices
Amorphous chalcogenide (GeSe) / Ovonic threshold switch / selector device in nonvolatile memory devices
Ferroelectric Rashba semiconductor (GeTe) / low-power spintronic devices / low-power nonvolatile memory devices
Topological insulators (Bi2Se3, Bi2Te3, ...) / new devices / devices for quantum computing