Sell Semikron SKM200GB063D New Stock

SKM200GB063D Power Igbt Transistor ;

• Part Number: SKM200GB063D

• Category: IGBT Module

• Manufacturer: Semikron

• Packaging: IGBT

• Data Code: 2019+

• Qty Available: 308

#SKM200GB063D Semikron SKM200GB063D New Power Igbt Transistor , SKM200GB063D pictures, SKM200GB063D price, #SKM200GB063D supplier

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SKM200GB063D not recommended for new design Features:

.N channel, homogeneous Silicon structure (NPT - Non punch-through IGBT)

.Low tail current with low temperature dependence

.High short circuit capability, self limiting if term. G is clamped to E

.Pos. temp.-coeff. of V CEsat

.50 % less turn off losses

.30 % less short circuit current

.Very low C ies , C oes , C res

.Latch-up free Fast & soft inverse CAL diodes

.Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould

.Large clearance (13 mm) and creepage distances (20 mm)

Typical Applications:

.Switching (not for liear use)

.Switched mode power supplies

.AC inverter servo drives

.UPS uninterruptable power supplies

.Welding inverters

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic:200A

Collector current Icp:450A

Collector power dissipation Pc:875W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C