SISPAD2020

September 23-25, 2020

Workshop, September 22

The Kobe Chamber of Commerce and Industry, Japan

Sponsored by The Japan Society of Applied Physics

International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development results in the area of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures.

The 25th SISPAD will be held on September 23-25, 2020 in Kobe, Japan.

Important Dates:

    • April 6, 2020 Abstract Submission Deadline
    • May 31, 2020 Notification of Acceptance
    • June 30, 2020 Full Paper Submission Deadline

Call for Papers

Scope and Topics

Scope:

This conference provides an opportunity for the presentation and discussion of the latest advances in modeling and simulation of semiconductor devices, processes, and equipment for integrated circuits.

Topics:

    • Modeling and simulation of all sorts of semiconductor devices, including FinFETs, GAA FETs, ultra-thin SOI devices, emerging memory devices, newmaterial-based nanodevices, optoelectronic devices, TFTs, sensors, power electronic devices, spintronic devices, tunnel FETs, SETs, organic electronic devices, and bioelectronic devices
    • Modeling and simulation of all sorts of semiconductor processes, including firstprinciples material design and growth simulation of nano-scale fabrication
    • Fundamental aspects of device modeling and simulation, including quantum transport, thermal transport, fluctuation, noise, and reliability
    • Compact modeling for circuit simulation, including low-power, high frequency, and power electronics applications
    • Process/device/circuit co-simulation in context with system design and verification
    • Equipment, topography, lithography modeling
    • Interconnect modeling, including noise and parasitic effects
    • Numerical methods and algorithms, including grid generation, user-interface, and visualization
    • Metrology for the modeling of semiconductor devices and processes
    • Multiscale approach from First Principles to TCAD simulations
    • Estimation with TCAD and machine learning
    • Neuromorphic devices and quantum computing
    • Multi-physics simulation