SISPAD 2020

September 23-25, 2020

Workshop, September 22

The Kobe Chamber of Commerce and Industry, Japan

Sponsored by The Japan Society of Applied Physics

NEWS

Jan. 31, 2020 The SISPAD abstract submission site is now open.

International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development results in the area of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures.

The 25th SISPAD will be held on September 23-25, 2020 in Kobe, Japan.

Important Dates:

    • April 6, 2020 Abstract Submission Deadline
    • May 31, 2020 Notification of Acceptance
    • June 30, 2020 Full Paper Submission Deadline

Call for Papers

Scope and Topics

Scope:

This conference provides an opportunity for the presentation and discussion of the latest advances in modeling and simulation of semiconductor devices, processes, and equipment for integrated circuits.

Topics:

    • Modeling and simulation of all sorts of semiconductor devices, including FinFETs, GAA FETs, ultra-thin SOI devices, emerging memory devices, newmaterial-based nanodevices, optoelectronic devices, TFTs, sensors, power electronic devices, spintronic devices, tunnel FETs, SETs, organic electronic devices, and bioelectronic devices
    • Modeling and simulation of all sorts of semiconductor processes, including firstprinciples material design and growth simulation of nano-scale fabrication
    • Fundamental aspects of device modeling and simulation, including quantum transport, thermal transport, fluctuation, noise, and reliability
    • Compact modeling for circuit simulation, including low-power, high frequency, and power electronics applications
    • Process/device/circuit co-simulation in context with system design and verification
    • Equipment, topography, lithography modeling
    • Interconnect modeling, including noise and parasitic effects
    • Numerical methods and algorithms, including grid generation, user-interface, and visualization
    • Metrology for the modeling of semiconductor devices and processes
    • Multiscale approach from First Principles to TCAD simulations
    • Estimation with TCAD and machine learning
    • Neuromorphic devices and quantum computing
    • Multi-physics simulation

Venue and Access

The conference venue is the Kobe Chamber of Commerce and Industry and Arinceton Hotel Kobe, Kobe, Japan.

Abstract Submission

Deadline for submission of abstract: April 6, 2020


The SISPAD abstract submission site is here.


  • Abstracts are limited to two pages including tables and figures.
  • Abstracts must be submitted in A4 size format (210 mm x 297 mm).
  • Abstracts must be submitted in PDF format.
  • Abstract file size must be no larger than 5 MB.
  • Abstracts sent by e-mail or postal mail will NOT be considered.
  • 10 - 12 point font is recommended.
  • You can NOT use 2 byte font such as Japanese, Korean, Chinese characters or 1 byte font of Asian characters such as MS Gothic, MS Mincho, Ryumin, Batang etc.

Committees

Conference Committee:

Steering Chair:

N. Mori (Osaka Univ.)

Conference Chair:

Y. Kamakura (Osaka Inst. Technol.)

Program Chair:

T. Kunikiyo (Renesas)

Program Vice-Chair:

S. Souma (Kobe Univ.)

Audit:

J. Hattori (AIST)

Local Arrangements:

S. Sato (Kansai Univ.)

S. Souma (Kobe Univ.)

Publication:

K. Matsuzawa (Kioxia)

General Affairs:

T. Iizuka (Hiroshima Univ.)

H. Minari (Sony Semiconductor Solutions)

N. Nakano (Keio Univ.)

K. Sonoda (Renesas)

International Steering Committee:

D. Esseni (Univ. of Udine, Italy)

F. Gamiz (Univ. of Granada, Spain)

N. Goldsman (Univ. of Maryland, USA)

Y. Kamakura (Osaka Inst. Technol., Japan)

J. Lorenz (Fraunhofer IISB, Germany)

N. Mori (Osaka Univ., Japan)

L. F. Register (Univ. of Texas at Austin, USA)

K. Sonoda (Renesas, Japan)

W. Vandenberghe (Univ. of Texas at Dallas, USA)

Program Committee:

Chair:

T. Kunikiyo (Renesas)

Vice-Chair:

S. Souma (Kobe Univ.)

Members:

M. Bazizi (Applied Materials)

L. Filipovic (TU Wien)

A. Godoy (Univ. of Granada)

J. Hattori (AIST)

A. Hiroki (Kyoto Inst. Technol.)

S.-M. Hong (Gwangju Inst. Sci. and Technol.)

C. Jungemann (Univ. of Aachen)

C. Kaneta (Fujitsu Laboratories)

M. Karner (Global TCAD Solutions)

K. Kukita (Kioxia)

U. Kwon (Samsung)

Y. Li (National Chiao Tung Univ.)

B. M.-Kope (TSMC)

S. Martinie (CEA-LETI)

H. Minari (Sony)

V. Moroz (Synopsys)

S. Reggiani (Univ. of Bologna)

F. Register (Univ. of Texas at Austin)

H. Tanaka (Kyoto Univ.)

W. Vandenberghe (Univ. of Texas at Dallas)

H. Y. Wong (San Jose State Univ.)

J. Wu (TSMC)

Past Conferences