#SEMIX653GB176D SEMIKRON SEMIX653GB176D New SEMiX 3s (150x64x17) 1200V 150A Half Bridge IGBT 4 (Trench) In production , SEMIX653GB176D pictures, SEMIX653GB176D price, #SEMIX653GB176D supplier
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Features
. Honogengous SI
. Trench= Trenchgate technology
. Vce(sat) with positive temperature coefficient
. High short circuit capability
Typical Applications*
. AC inverter dirves
. UPS
. Electronic Welding
Remarks
. Case temperature limited Tc=125°C max.
. Product reliability results are valid for Tj+150°C
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1700V
Gate-Emitter voltage VGES:±20V
Collector current IC:450A
Collector current Icp:900A
Collector power dissipation Pc:1270W
Collector-Emitter voltage VCES:4000V
Operating junction temperature Tj:-40 to +175°C
Storage temperature Tstg :-40 to +125°C